关闭背景特效

2SC4412 [TYSEMI]

High breakdown voltage. Excellent DC current gain ratio(hFE ratio : 0.95 typ).; 高击穿电压。出色的直流电流增益比（HFE比： 0.95 ，典型值）。

2SC4412


元器件型号：	2SC4412
生产厂家：	TY Semiconductor Co., Ltd
描述和应用：	High breakdown voltage. Excellent DC current gain ratio(hFE ratio : 0.95 typ). 高击穿电压。出色的直流电流增益比（HFE比： 0.95 ，典型值）。
PDF文件：	总1页 (文件大小：66K)
下载文档：	下载PDF数据表文档文件
型号参数：2SC4412参数

2SC4412-4

TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 50MA I(C) | SOT-23VAR

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16 ETC

2SC4412-5

TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 50MA I(C) | SOT-23VAR

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14 ETC

2SC4413

Low-Frequency General-Purpose Amp Applications

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43 SANYO

2SC4413

NPN Epitaxial Planar Silicon Transistor

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20 KEXIN

2SC4413

Adoption of FBET process. Low collector-to-emitter saturation voltage.

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20 TYSEMI

2SC4414

High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications

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35 SANYO

2SC4414R

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | SPAK

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10 ETC

2SC4414S

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | SPAK

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12 ETC

2SC4414T

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | SPAK

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12 ETC

2SC4415

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27 ETC

2SC4415XC-TL

Si, NPN, RF SMALL SIGNAL TRANSISTOR

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0 RENESAS

2SC4415XC-TR

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN

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0 RENESAS

2SC4415XC-UR

Si, NPN, RF SMALL SIGNAL TRANSISTOR

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0 RENESAS

2SC4416

Silicon NPN Epitaxial

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40 HITACHI

2SC4416XB

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN

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0 HITACHI

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