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元器件品牌
2SC4505
[TYSEMI]
High breakdown voltage. (BVCEO = 400V) Low saturation voltage; 高击穿电压。 （ BVCEO = 400V ），低饱和电压
元器件型号：
2SC4505
生产厂家：
TY Semiconductor Co., Ltd
描述和应用：
High breakdown voltage. (BVCEO = 400V) Low saturation voltage
高击穿电压。 （ BVCEO = 400V ），低饱和电压
PDF文件：
总2页 (文件大小：132K)
下载文档：
下载PDF数据表文档文件
型号参数：2SC4505参数
查看货源
2SC4505_07
Power Transistor (400V, 0.1A)
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ROHM
2SC4505N
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 100MA I(C) | SC-62
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103
ETC
2SC4505P
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 100MA I(C) | SC-62
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49
ETC
2SC4505Q
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 100MA I(C) | SC-62
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32
ETC
2SC4505T100/NP
0.1A, 400V, NPN, Si, POWER TRANSISTOR
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1
ROHM
2SC4505T100/Q
0.1A, 400V, NPN, Si, POWER TRANSISTOR
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0
ROHM
2SC4505T100NP
Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,
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0
ROHM
2SC4505T100NQ
Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,
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0
ROHM
2SC4505T100P
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 100MA I(C) | SOT-89
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46
ETC
2SC4505T100PQ
Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,
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0
ROHM
2SC4505T100PQ
Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon,
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0
ROHM
2SC4505T100Q
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 100MA I(C) | SOT-89
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29
ETC
2SC4505T101/PQ
Power Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
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0
ROHM
2SC4505T101/PQ
Power Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
Warning
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156
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1
ROHM
2SC4505T101P
100mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR
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0
ROHM
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