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元器件品牌
2SC4702
[TYSEMI]
High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ.; 高击穿电压VCEO = 300 V小穗轴玉米棒= 1.5 pF的典型。
元器件型号：
2SC4702
生产厂家：
TY Semiconductor Co., Ltd
描述和应用：
High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ.
高击穿电压VCEO = 300 V小穗轴玉米棒= 1.5 pF的典型。
晶体 晶体管 光电二极管 放大器
PDF文件：
总1页 (文件大小：122K)
下载文档：
下载PDF数据表文档文件
型号参数：2SC4702参数
查看货源
2SC4702_11
Silicon NPN Epitaxial
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156
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11
RENESAS
2SC4702XV
Small Signal Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
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156
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0
HITACHI
2SC4702XV-01
Small Signal Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, MPAK-3
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0
HITACHI
2SC4702XV-TL
暂无描述
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156
-
0
HITACHI
2SC4702XV-TL
50mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, MPAK-3
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0
RENESAS
2SC4702XV-TR-E
Silicon NPN Epitaxial
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156
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32
RENESAS
2SC4702XV-TR-E
Silicon NPN Epitaxial
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156
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19
RENESAS
2SC4702XV-TR-H
Silicon NPN Epitaxial
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156
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23
RENESAS
2SC4702XV-UL
暂无描述
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156
-
0
HITACHI
2SC4702XV-UL
50mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, MPAK-3
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156
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0
RENESAS
2SC4702XV-UR
50mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, MPAK-3
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156
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0
RENESAS
2SC4703
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
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156
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18
RENESAS
2SC4703
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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259
NEC
2SC4703(NE46234)
Discrete
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156
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60
NEC
2SC4703-A
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-89, 3 PIN
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0
NEC
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