2SD1251 [TYSEMI]

Wide area of safe operation. Emitter-base voltage VEBO 8 V; 安全运行的广域。发射极 - 基极电压VEBO 8 V
2SD1251
元器件型号: 2SD1251
生产厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述和应用:

Wide area of safe operation. Emitter-base voltage VEBO 8 V
安全运行的广域。发射极 - 基极电压VEBO 8 V

晶体 晶体管 放大器
PDF文件: 总2页 (文件大小:214K)
下载文档:  下载PDF数据表文档文件
型号参数:2SD1251参数

2SD1251/2SD1251A

2SD1251. 2SD1251A - NPN Transistor

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14 ETC

2SD1251A

Silicon NPN triple diffusion junction type(For power amplification)

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13 PANASONIC

2SD1251A

Wide area of safe operation. Emitter-base voltage VEBO 8 V

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14 TYSEMI

2SD1251A

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, N TYPE PACKAGE-3

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0 PANASONIC

2SD1251AH

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

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0 PANASONIC

2SD1251AH

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

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0 PANASONIC

2SD1251AO

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-221VAR

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16 ETC

2SD1251AP

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-221VAR

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6 ETC

2SD1251AQ

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-221VAR

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13 ETC

2SD1251ATX

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

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0 PANASONIC

2SD1251ATX

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

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0 PANASONIC

2SD1251H

暂无描述

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0 PANASONIC

2SD1251O

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR

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21 ETC

2SD1251OP

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, N TYPE PACKAGE-3

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0 PANASONIC

2SD1251P

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-221VAR

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10 ETC