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2SD1611 [TYSEMI]

High forward current transfer ratio hFE High collector-base voltage (Emitter open) VCBO; 高正向电流传输比的hFE高集电极 - 基极电压（发射极开路） VCBO
2SD1611
元器件型号： 2SD1611
生产厂家： TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述和应用：

High forward current transfer ratio hFE High collector-base voltage (Emitter open) VCBO
高正向电流传输比的hFE高集电极 - 基极电压（发射极开路） VCBO
PDF文件： 总2页 (文件大小：105K)
下载文档：  下载PDF数据表文档文件
型号参数：2SD1611参数
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2SD1614

 World standard miniature package. High dc current gain. Low VCE(sat).

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18 TYSEMI

2SD1614

 NPN Silicon Epitaxial Transistor

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27 KEXIN

2SD1614

 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

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119 NEC

2SD1614

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6 NEC

2SD1614_15

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0 KEXIN

2SD1614-K

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0 KEXIN

2SD1614-L

 NPN Transistors

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0 KEXIN

2SD1614-M

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0 KEXIN

2SD1614-T1

 Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PLASTIC, SC-62, 3 PIN

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0 NEC

2SD1614-T1XL

 Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PLASTIC, SC-62, 3 PIN

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0 NEC

2SD1614XK

 BJT

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16 ETC

2SD1614XK

 Power Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, POWER, MINIMOLD PACKAGE-3

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0 NEC

2SD1614-XK

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0 RENESAS

2SD1614XK-AY

 TRANSISTOR,BJT,NPN,20V V(BR)CEO,2A I(C),SOT-89

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0 RENESAS

2SD1614XK-T2-AY

 TRANSISTOR,BJT,NPN,20V V(BR)CEO,2A I(C),SOT-89

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0 RENESAS
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