CHA2093-99F/00 [UMS]
20-30GHz Low Noise Amplifier; 20-30GHz低噪声放大器
| 型号： | CHA2093-99F/00 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 20-30GHz Low Noise Amplifier |
| 文件： | 总8页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA2093
20-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Vd
7034
25
Description
The CHA2093 is a two-stage wide band
monolithic low noise amplifier.
50
IN
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
OUT
Vg 2
Vg 1
It is supplied in chip form.
20
18
16
14
12
10
8
10
9
8
7
6
5
4
3
2
1
0
Main Features
■ Broad band performance 20-30GHz
■ 2.2dB noise figure, 20-30GHz
■ 15dB gain, ± 0.5dB gain flatness
■ Low DC power consumption, 50mA
■ 20dBm 3rd order intercept point
■ Chip size : 1,67 x 1,03 x 0.1mm
6
4
2
0
10
15
20
25
30
35
40
Frequency ( GHz )
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
NF
Parameter
Noise figure, 20-30GHz
Min
Typ
2.2
Max
Unit
dB
3.0
G
Gain
13
15
dB
Gain flatness
dB
∆G
± 0.5
± 1.0
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20939042
Specifications subject to change without notice
1/8
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
CHA2093
Electrical Characteristics
Tamb = +25°C, Vd = +4V Id=45mA
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range
Gain (1)
20
30
Ghz
G
13
15
± 0.5
2.2
dB
dB
dB
Gain flatness (1)
Noise figure (1)
∆G
NF
± 1.0
3.0
VSWRin Input VSWR (1)
VSWRout Ouput VSWR (1)
3.0:1
3.0:1
IP3
P1dB
Id
3rd order intercept point
20
13
50
dBm
dBm
mA
Output power at 1dB gain compression
Drain bias current
(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and
output bonding wires , the indicated parameter values should be improved.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Vd
Parameter
Drain bias voltage
Values
4.0
Unit
V
Pin
Maximum peak input power overdrive (2)
Operating temperature range
+15
dBm
°C
Top
-40 to +85
-55 to +125
Tstg
Storage temperature range
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA20939042
Specifications subject to change without notice
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
CHA2093
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25°C
Bias Conditions : Vd = +4V Id=45mA
Freq
GHz
MS11
dB
PS11
°
MS12
dB
PS12
°
MS21
dB
PS21
°
MS22
dB
PS22
°
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
-1.36
-1.98
-2.93
-4.5
140
121.9
101.1
77.7
50.1
16.4
-30
-86
-131
-159.2
177.8
170.9
167.2
168
163.4
155.8
145.5
124.4
100.2
56.9
-62.29
-58.39
-53.05
-49.08
-46.97
-44.52
-42.23
-40.43
-39.41
-38
-36.01
-34.99
-34.53
-34.46
-33.67
-33.27
-32.65
-32.6
-32.49
-31.69
-31.87
-31.22
-31.23
-32.96
-34.73
-35.69
-35.69
-37.95
-38.15
-43.41
-43.1
-138.5
-130.1
-130.3
-146.8
-163.9
173.2
160.2
138.2
126.2
104.7
92.4
4.35
7.36
9.77
11.61
12.9
13.86
14.55
15
15.36
15.69
15.79
15.96
15.98
15.84
15.75
15.6
15.55
15.46
15.48
15.48
15.24
14.69
13.43
11.43
9.01
51.6
27.2
0.8
-16.6
-16.75
-16.67
-16.77
-17.47
-17.67
-18.06
-18.55
-18.7
151.6
145.1
137.9
129.8
122.7
122.2
118.4
118.4
125.4
131.3
131.1
127
120.5
116.3
107.1
100.6
96.1
91.6
85.7
80.2
70.5
58.1
40.1
20.4
1.5
-26.2
-53.2
-78.7
-103.5
-127
-149.8
-171.8
165.6
144.3
122.3
102.1
80.9
60.2
40.3
18.6
-2.8
-27.3
-53
-82.2
-112.8
-141.9
-168.7
167.5
145.9
125.7
107.4
89
71.9
55.3
40.2
27.2
-6.8
-10.02
-13.47
-14.68
-13.76
-12.83
-13.51
-14.3
-14.74
-14.63
-14.15
-13.71
-13.42
-13.54
-14.43
-14.48
-12.87
-8.84
-5.55
-3.72
-2.5
-1.88
-1.52
-1.32
-1.07
-0.93
-0.82
-0.68
-0.52
-0.5
-17.9
-15.62
-14.48
-13.4
-12.6
-11.67
-11.4
-11.3
-10.33
-9.98
-8.88
-7.99
-6.86
-6.35
-6.69
-7.51
-8.65
-9.92
-11.17
-12.15
-12.5
-12.27
-11.82
-10.89
-9.87
63.7
46.8
24.6
6.3
-7.6
-29.3
-51.5
-68.3
-88.8
-115.7
-140.4
-171
159.7
134.8
121.6
98
72.2
56.8
86.9
76.9
44.4
39.6
24
21
5.6
-37.4
-73.3
-101.3
-123.2
-141.2
-155.7
-167.5
-177.6
172.6
164.7
157.2
149.5
142
6.2
3.35
0.36
-17
-36.6
-56.5
-78.9
-103.1
-127.3
-148.5
-166.3
-179.6
167.4
156.2
-2.78
-6.02
-9.59
-13.6
-18.24
-24.6
-35.19
-37.14
-43.1
-43.23
-44.08
-45.8
-0.41
-0.37
135.3
128.4
30.1
126.8
-8.91
-8.04
-45.05
18.1
Ref. : DSCHA20939042
Specifications subject to change without notice
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
CHA2093
Typical Results
Chip Typical Response ( On wafer Sij ) :
Tamb = +25°C
Vd = 4V ; Id = 45mA
20
15
10
5
DBS11
DBS22
Gain
0
-5
-10
-15
-20
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
Frequency ( GHz )
Typical Gain and Matching measurements on wafer.
20
19
18
17
16
15
14
13
12
11
10
9
Gain
NF
Gab
8
7
6
5
4
3
2
1
0
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
Frequency ( GHz )
Typical Gain and Noise Figure measurements on wafer.
Ref. : DSCHA20939042
Specifications subject to change without notice
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
CHA2093
Typical Results
Tamb = +25°C
Vd = 4V ; Id = 45mA
F=20GHz
16
14
12
10
8
16
14
12
10
8
6
6
4
4
Pout
Gain
2
2
0
0
-9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
3
4
5
Input power (dBm)
F=30GHz
16
16
14
12
10
8
14
12
10
8
6
6
Pout
Gain
4
4
2
2
0
0
-3
-2
-1
0
1
2
3
4
5
6
7
Input power (dBm)
Typical Output Power and Gain measurements in test jig
(included losses of the jig)
Ref. : DSCHA20939042
5/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
CHA2093
Typical Chip Assembly
To Vd DC Drain supply feed
47pF
7034
25
50
IN
OUT
47pF
47pF
To Vg1 DC Gate supply feed
To Vg2 DC Gate supply feed
Dimensions : 1670 x 1030µm ± 10µm
Mechanical data
1670
1365
1065
1030
CHA2093
445
445
565
865
Ref. : DSCHA20939042
Specifications subject to change without notice
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
CHA2093
Chip Biasing
This chip is a two stage amplifier, and flexibility is provided by the access to number of pads.
The internal DC electrical schematic is given in order to use these pads in a safe way.
Vd
50
25
IN
OUT
Vds1
Vds2
Vg 1
Vg 2
The two requirements are :
N°1 : Not exceed Vds = 3.5Volt
N°2 : Not biased in such a way that Vgs becomes positive.
( internal Gate to Source voltage )
( internal Drain to Source voltage ).
We propose two standard biasing :
Low Noise and low consumption :
Low Noise and high output power :
Vd = 3.5V and Id = 30mA ( Vg1=Vg2)
Vd = 4.0V and Id = 45mA.( A separate acces to
the gate voltages of the first and the output stage is provided. Nominal bias is obtained for a
typical current of 30mA for the output stage and 15 mA for the first stage. The first step to
bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then
Vg1 is reduced to obtain 45 mA of current through the amplifier.
Ref. : DSCHA20939042
7/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-30GHz Low Noise Amplifier
CHA2093
Ordering Information
Chip form :
CHA2093-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA20939042
Specifications subject to change without notice
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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