CHA3666 [UMS]
6-17GHz Low Noise Amplifier; 6-17GHz低噪声放大器
| 型号： | CHA3666 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 6-17GHz Low Noise Amplifier |
| 文件： | 总8页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA3666
RoHS COMPLIANT
6-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
D1
D2
The CHA3666 is a two-stage self biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
P-HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
RFout
RFin
UMS
P1
P2 N2
Main Features
24,0
22,0
20,0
18,0
16,0
14,0
12,0
10,0
8,0
■ Broadband performance 6-17GHz
■ 1.8dB noise figure
■ 26dBm 3rd order intercept point
■ 17dBm power at 1dB compression
■ 21dB gain
Gain
■ Low DC power consumption
NF
6,0
4,0
2,0
0,0
4,00
6,00
8,00
10,00
12,00
14,00
16,00
18,00
Main Characteristics
Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND
Symbol
NF
Parameter
Min
Typ
Max
Unit
dB
Noise figure
Gain
1.8
21
26
2
G
19
dB
IP3
3rd order intercept point
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA36666159 - 08 Jun 06
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
CHA3666
Electrical Characteristics
Temp = +25°C, Pads: P1,N2 = GND (1)
Symbol
Parameter
Operating frequency range
Min
6
Typ
Max
17
Unit
GHz
Fop
G
Gain (2)
19
21
dB
Gain flatness
±0.5
1.8
2.5:1
2.0:1
26
dB
dB
∆G
NF
Noise figure (2)
2
IS11I
IS22I
IP3
Input return loss (2)
Ouput return loss (2)
3rd order intercept point (2)
Output power at 1dB gain comp.(2) (3)
Drain bias voltage
2.7:1
2.2:1
dB
dB
dBm
dBm
V
P1dB
Vd
15
17
4
Id
Drain bias current
75
80
86
mA
(1) The other pads are not connected
(2) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(3) P1dB can be increased (+0.5dBm) when P1 & P2 are connected and N2 non connected. In
this case Id is around 85mA
Absolute Maximum Ratings (1)
Temp = +25°C
Symbol
Vd
Parameter
Values
4.5
Unit
V
Drain bias voltage
RF input power
Pin
10
dBm
Top
Tj
Operating temperature range (chip backside)
Junction temperature
-40 to +85
175
°C
°C
°C
Tstg
Storage temperature range
-55 to +125
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Ref. : DSCHA36666159 - 08 Jun 06
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
CHA3666
Typical Scattering Parameters ( On wafer Sij measurements )
Bias Conditions :
Vd1=Vd2= +4V Pads: P1, N2 = GND.
Freq
GHZ
0,5
dBS11
PhS11
°
dBS12
dB
PhS12
°
dBS21
dB
PhS21
°
dBS22
dB
PhS22
°
dB
-0,12
-0,15
-0,21
-0,31
-0,53
-0,99
-2,07
-4,44
-8,15
-9,23
-9,21
-9,07
-8,93
-8,37
-7,99
-7,87
-7,75
-7,54
-7,50
-7,55
-7,77
-8,11
-8,53
-8,98
-9,62
-10,22
-10,60
-11,07
-11,34
-11,28
-11,14
-11,46
-10,91
-10,01
-9,02
-8,00
-7,75
-7,02
-6,59
-6,38
-12,41
-25,18
-38,83
-54,17
-72,61
-96,30
-129,20
179,00
104,20
35,18
-58,07
-66,93
-68,19
-70,23
-66,09
-58,45
-57,93
-53,52
-48,40
-45,69
-43,80
-42,66
-40,68
-40,46
-39,16
-38,17
-38,58
-37,51
-37,26
-36,90
-36,76
-36,05
-35,65
-35,55
-35,31
-35,13
-35,13
-34,80
-34,90
-36,47
-36,88
-37,33
-38,29
-38,86
-41,04
-42,41
-45,21
-47,61
-50,99
-45,57
-75,30
158,40
-42,37
132,40
-174,80
112,50
51,75
-55,39
-59,74
-55,53
-28,46
-11,74
1,55
74,95
-0,16
-11,79
-23,89
-37,09
-51,84
-68,34
-84,65
-92,78
-98,70
-98,52
-100,90
-104,20
-107,90
-113,20
-119,50
-128,70
-141,30
-154,90
-168,10
176,80
157,60
132,40
96,42
1,0
86,43
-0,19
1,5
-2,66
-0,26
2,0
25,79
-0,62
2,5
2,26
-1,03
3,0
-54,65
-105,90
-157,20
149,90
103,90
65,87
-2,92
3,5
9,78
-5,03
4,0
-50,92
-119,10
-159,90
169,70
145,70
125,10
107,20
88,92
15,92
19,62
21,13
21,84
22,14
22,22
22,22
22,19
22,23
22,19
22,08
22,03
21,97
21,93
21,90
21,88
21,86
21,82
21,75
21,72
21,74
21,73
21,84
21,64
21,52
21,68
21,60
21,15
20,44
19,26
18,39
17,14
15,75
-7,10
4,5
-8,51
5,0
-9,15
5,5
-2,42
-9,80
6,0
-20,75
-30,17
-38,97
-47,52
-56,29
-63,59
-71,38
-79,76
-88,86
-97,01
-105,90
-114,50
-122,60
-130,10
-135,40
-143,40
-153,70
-160,80
-175,20
164,00
146,10
125,00
100,10
72,69
34,89
6,85
-10,53
-10,91
-11,49
-11,76
-12,47
-13,87
-15,57
-17,57
-20,19
-23,18
-25,38
-26,39
-24,69
-22,43
-20,23
-19,67
-19,22
-18,20
-17,69
-18,61
-17,96
-16,63
-14,95
-13,51
-12,40
-13,47
-11,57
-10,58
-9,99
6,5
7,0
-17,33
-39,18
-59,70
-79,40
-97,96
-115,30
-132,00
-148,40
-164,10
-179,90
164,70
149,40
134,30
119,10
104,00
88,96
7,5
8,0
75,16
8,5
62,12
9,0
42,64
9,5
36,06
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
18,5
19,0
19,5
20,0
26,77
12,22
-1,08
-13,41
-24,05
-35,87
-50,20
-60,43
-76,43
-81,33
-95,20
-112,40
-119,70
-129,70
-155,40
-161,40
-173,60
-161,70
-177,80
-127,80
-104,20
54,20
16,73
-8,28
-25,56
-36,11
-45,27
-51,93
-63,45
-77,33
-72,90
-75,48
-83,86
-102,40
-120,70
-130,90
-142,30
-160,60
-176,80
73,08
55,53
41,16
24,37
5,25
-14,81
-35,47
-51,39
-69,18
-86,07
-101,50
45,92
21,28
0,74
-18,52
-35,21
Ref. : DSCHA36666159 - 08 Jun 06
3/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
CHA3666
Typical on wafer Measured Performance
Temp = +25°C
Vd1=Vd2= +4V Pads: P1,N2 = GND- Typical Id=80mA
Measurements on wafer (without bonding wires at the RF ports)
S parameters versus frequency
25
20
15
S21
10
5
0
S11
-5
-10
-15
S22
-20
-25
-30
2
4
6
8
10
12
14
16
18
20
Frequency (GHz)
NF versus frequency
6
5,5
5
4,5
4
3,5
3
2,5
2
1,5
1
0,5
0
4
6
8
10
12
14
16
18
Frequency (GHz)
Ref. : DSCHA36666159 - 08 Jun 06
4/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
CHA3666
Output power at 1dB compression versus frequency
20
19,5
19
*P1=P2=grounded
18,5
18
17,5
17
16,5
16
**P1=N2=grounded
15,5
15
14,5
14
• *typical consumption : 85mA
• ** typical consumption : 80mA
13,5
13
12,5
12
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Frequency (GHz)
Ref. : DSCHA36666159 - 08 Jun 06
5/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
CHA3666
C/I3 versus output power @configuration: P1_P2 grounded
60
50
40
30
20
10
0
CI3 -6GHZ
CI3 -12GHZ
CI3 -7GHZ
CI3 -14GHZ
CI3 -8GHZ
CI3 -16GHZ
CI3 -9GHZ
CI3 -17GHZ
CI3 -10GHZ
CI3 -18GHZ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Single Output power(dBm)
IP3 versus output power @configuration P1_P2 grounded
30
28
26
24
22
20
18
16
14
12
10
IP3_6GHz
IP3_7GHz
IP3_8GHz
IP3_9GHz
IP3_10GHz
IP3_18GHz
IP3_12GHz
IP3_14GHz
IP3_16GHz
IP3_17GHz
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Single output power (dBm)
Ref. : DSCHA36666159 - 08 Jun 06
6/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
CHA3666
Chip Assembly and Mechanical Data
Vd1, Vd2 DC drain supply feed
10nF
120pF
120pF
P1
N2
P2
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended
Bonding pad position
DC Pads size: 100/100µm, Chip thickness: 100µm
Ref. : DSCHA36666159 - 08 Jun 06
7/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
6-17GHz Low Noise Amplifier
CHA3666
Chip Biasing options
This chip is self-biased, and flexibility is provided by the access to number of pads. The
internal DC electrical schematic is given in order to use these pads in a safe way.
Vd1
Vd2
1.5K
3.1K
0.3K
40
2.5
0.3K
RFout
RFin
20
20
90
90
8
P1
P2
N2
Two standard biasing :
Low Noise and low consumption :
Vd1=Vd2 = 4V and P1, N2 grounded.
P2 pads non connected ( NC).
Idd = 80mA & Pout-1dB = 17dBm Typical.
Low Noise and higher output power
Vd1=Vd2 = 4V and P1, P2 grounded.
N2 pads non connected ( NC).
Idd = 85mA & Pout-1dB = 17.5dBm Typical.
Ordering Information
Chip form :
CHA3666-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United Monolithic
Semiconductors S.A.S.
Ref. : DSCHA36666159 - 08 Jun 06
8/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
相关型号：
CHA3666-99F/00
Wide Band Low Power Amplifier, 6000MHz Min, 17000MHz Max, 1 Func, GAAS, ROHS COMPLIANT, DIE-10
UMS
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