CHA6250-QFG21 [UMS]
5.5-9GHz Power Amplifier; 5.5-9GHz功率放大器
| 型号： | CHA6250-QFG21 |
| 厂家： | 
UNITED MONOLITHIC SEMICONDUCTORS |
| 描述： | 5.5-9GHz Power Amplifier |
| 文件： | 总14页 (文件大小：434K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHA6250-QFG
5.5-9GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6250-QFG is a three stages
monolithic GaAs high power circuit that
produces more than 2 Watt output power.
It is designed for commercial communication
systems.
The circuit is manufactured with a pHEMT
process, 0.5µm gate length.
Main Features
Output power at 1dB comp.
■ Broadband performances: 5.5- 9GHz
■ 23.5dB Linear Gain
■ 33.5dBm output power @1dB comp.
■ 43dBm output TOI
■ 29% PAE@ 1dB compression
■ DC bias: Vd=7Volt@Id=0.9A
■ 32L-QFN5x5
36
35
34
33
32
31
30
29
28
Temp=25°C
Temp=-40°C
Temp=+85°C
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency(GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Freq
Parameter
Min
Typ
Max
Unit
GHz
dB
Frequency range
Linear Gain
5.5
9.0
Gain
23.5
43.0
33.5
OTOI
Pout
Output TOI
dBm
dBm
Output Power @1dB comp.
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +7.0V
Symbol
Freq
Parameter
Min
5.5
21
Typ
Max
9
Unit
GHz
dB
Frequency range
Gain
Linear Gain
23.5
27
G_T
Linear Gain variation versus Temperature
-0.03
dB/°C
RL_in
RL_out
OP1dB
Input Return Loss
-18
-14
dB
dB
Output Return Loss
Output power @1dB comp. [5.5 - 6.8GHz]
Output power @1dB comp. [6.8 - 9GHz]
32.5
31.5
33.5
32.5
dBm
dBm
Psat
OTOI
PAE
Idq
Saturated output power
Output TOI
34.5
43
dBm
dBm
%
Power Added Efficiency @ 1dB compression
Quiescent Drain current
Gate voltage
29
900
-0.5
1000
mA
V
Vg
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
7.5V
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Idq
1.06
A
Vg
-2 to +0
15
V
Pin
Input continuous power
dBm
°C
°C
°C
Tj
Junction temperature (2)
Operating temperature range
Storage temperature range
175
Ta
-40 to +85
-55 to +150
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
VD1
Pad No
30
Parameter
DC Drain voltage 1st stage
Values
Unit
V
7
7
VD2
28
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage tuned for Idq= 0.9A
V
VD3
25
7
V
VG
13
-0.5
V
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
2/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.5-9GHz Power Amplifier
CHA6250-QFG
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below than the maximum value specified in the next table. So, the system PCB must
be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintained below than the maximum temperature specified (see the curve Pdiss. Max) in
order to guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA6250-QFG
Recommended max. junction temperature (Tj max)
Junction temperature absolute maximum rating
Max. continuous dissipated power (Pdiss. Max.)
:
:
:
169 °C
175 °C
6.3 W
=> Pdiss. Max. derating above Tcase(1)= 85
Junction-Case thermal resistance (Rth J-C)(2)
Minimum Tcase operating temperature(3)
°C
:
:
:
75 mW/°C
<13 °C/W
-40 °C
Maximum Tcase operating temperature(3)
Minimum storage temperature
:
:
:
85 °C
-55 °C
150 °C
Maximum storage temperature
(1) Derating at junction temperature constant = Tj max.
(2) Rth J-C is calculated for a worst case considering the hottest junction of the MMIC and all the devices biased.
(3) Tcase=Package back side temperature measured under the die-attach-pad (see the drawing below).
7
6
5
4
3
2
Tcase
Example: QFN 16L 3x3
Location of temperature
reference point(Tcase)
on package's bottom side
1
0
Pdiss. Max. @Tj <Tj max (W)
-50
-25
0
25
50
75
100
125
150
175
Tcase (°C)
6.4
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
3/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Idq = 900mA
Measurement in the plan of the connectors, using the proposed land pattern & board, as
defined in paragraph “Evaluation mother board”
Linear Gain & Return Loss
30
25
20
15
10
5
5
0
-5
-10
-15
-20
-25
-30
-35
0
Linear Gain
RL_in
-5
RL_out
-10
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency(GHz)
Linear Gain versus temperature
30
25
20
15
10
5
Temp=25°C
Temp=-40°C
Temp=+85°C
0
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency(GHz)
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
4/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.5-9GHz Power Amplifier
CHA6250-QFG
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Idq = 900mA
Measurement in the QFN access plans, using the proposed land pattern & board, as defined
in paragraph “Evaluation mother board”
Output power at 1 dB Compression
36
35
34
33
32
31
Temp=25°C
Temp=-40°C
30
Temp=+85°C
29
28
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency(GHz)
Power Added Efficiency at 1 dB Compression
40
35
30
25
20
15
10
Temp=25°C
Temp=-40°C
Temp=+85°C
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency(GHz)
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
5/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Idq = 900mA
Drain current at 1 dB Compression
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
Temp=25°C
Temp=-40°C
Temp=+85°C
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency(GHz)
Output TOI (dBm) at two Pout/Tone
48
47
46
45
44
43
42
41
40
39
Pout/Tone=14.5 dBm
Pout/Tone=20.5 dBm
6
6.5
7
7.5
8
8.5
9
Frequency(GHz)
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
6/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.5-9GHz Power Amplifier
CHA6250-QFG
Typical Board Measurements
Tamb.= +25°C, Vd = +7.0V, Idq = 900mA
Output C/I3 (dBc) versus Pout / 2 Tones
80
75
70
65
60
55
50
45
40
35
Freq=6 GHz
Freq=7 GHz
Freq=8 GHz
Freq=9 GHz
10
12
14
16
18
20
22
24
26
28
Pout/2Tones (dBm)
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
7/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Typical Board Measurements
Tamb.= +25°C
Linear gain vs Vd at 0.9A
Linear gain vs Vd at 1A
30
28
26
24
22
20
18
16
14
30
28
26
24
22
20
18
16
14
12
10
5V
6V
7V
5V
6V
7V
12
10
5
6
7
8
9
10
5
6
7
8
9
10
Frequency (GHz)
Frequency (GHz)
Power at 1dB vs Vd at 0.9A
Power at 1dB vs Vd at 1A
36
35
34
33
32
31
30
29
28
27
26
25
36
35
34
33
32
31
30
29
28
27
26
25
5V
6V
7V
5V
6V
7V
5
6
7
8
9
10
5
6
7
8
9
10
Frequency (GHz)
Frequency (GHz)
Output TOI at Pout/ Tone= 7dBm
Output TOI at Pout/ Tone= 13dBm
50
50
48
46
44
42
40
38
36
34
32
30
48
46
44
42
40
38
36
34
32
30
7V- 0.9A
6V- 0.9A
5V- 1A
7V- 0.9A
6V- 0.9A
5V- 1A
5.5
6
6.5
7
7.5
8
8.5
9
9.5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
Frequency (GHz)
Frequency (GHz)
Output TOI at Pout/ Tone= 19dBm
50
48
46
44
42
40
38
36
34
32
30
7V- 0.9A
6V- 0.9A
5V- 1A
5.5
6
6.5
7
7.5
8
8.5
9
9.5
Frequency (GHz)
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
8/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.5-9GHz Power Amplifier
CHA6250-QFG
Package outline (1)
Matt tin, Lead Free
Units :
(Green)
mm
1- Nc
2- Nc
3- Gnd(2)
4- RF IN
5- Gnd(2)
6- Nc
12- Gnd(2)
13- VG
23- Nc
24- Nc
From the standard : JEDEC MO-220
14- Nc
25- VD3
26- Gnd(2)
27- Nc
(VGGD)
15- Nc
33- GND
16- Nc
17- Nc
28- VD2
29- Gnd(2)
30- VD1
31- Nc
7- Nc
18- Nc
8- Nc
19- Nc
9- Nc
20- Gnd(2)
21- RF OUT
22- Gnd(2)
10- Nc
11- Nc
32- Nc
(1) The package outline drawing included to this data-sheet is given for indication. Refer to the
application note AN0017 (http://www.ums-gaas.com) for exact package dimensions.
(2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board.
Ensure that the PCB board is designed to provide the best possible ground to the package.
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
9/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Evaluation mother board
■ Compatible with the proposed footprint.
■ Based on typically Ro4003 / 8mils or equivalent.
■ Using a micro-strip to coplanar transition to access the package.
■ Recommended for the implementation of this product on a module board. Module
should be designed to dissipate around 6.3W
■ First decoupling network is done with 100pF capacitors, second decoupling network is
done with 10nF capacitors.
■ See application note AN0017 for details.
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
10/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.5-9GHz Power Amplifier
CHA6250-QFG
Notes
Due to ESD protection circuits on RF input, an external capacitance might be requested to
isolate the product from external voltage that could be present on the RF access.
30
28
25
VD1
VD2
VD3
RF IN
4
RF OUT
21
VG
13
The DC connections do not include any decoupling capacitor in package, therefore it is
mandatory to provide a good external DC decoupling (100pF & 10nF) on the PC board, as
close as possible to the package.
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
11/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
DC Schematic
7V, 900mA
VD2
VD1
VD3
520 mA
255 mA
125 mA
RF OUT
RF IN
15
VG # -0.5 V
50
100
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
12/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5.5-9GHz Power Amplifier
CHA6250-QFG
Note
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
13/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA6250-QFG
5.5-9GHz Power Amplifier
Recommended package footprint
Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot
print recommendations.
SMD mounting procedure
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS package products.
Ordering Information
QFN 5x5 RoHS compliant package:
CHA6250-QFG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
14/14
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
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