CHC3014-99F_15_技术文档

CHC3014-99F

RoHS COMPLIANT

X-band Core Chip

GaAs Monolithic Microwave IC

Description

The CHC3014-99F is a Receive and

Transmit X band Core Chip.

It includes a 6 bit phase shifter, a 6 bit

attenuator, a second 2 bit attenuator for

tuning, self-biased buffers, switch and TTL

compatible parallel interfaces.

This device is manufactured 0.25µm pHEMT

process, including via holes through the

substrate.

It is available in chip form.

Main Features

■ Operating frequency range: 8 -12GHz

■ Receive path linear gain: 13.5dB

■ Transmit path linear gain: 25dB

■ Phase shift range: 0-360°(step 5.625°)

■ Fine attenuator: 34.65dB (step 0.55dB)

■ Tuning attenuator: 6dB (step 2dB)

■ Chip size: 4.47 x 5.07 x 0.1mm

Main Characteristics

Tamb.= +25°C, V+ = 5V / V- = -5V

Symbol

Parameter

Min

Typ

Max

Unit

GHz

°

Freq

Frequency range

8

12

Rms_pe RMS phase error

2

Rms_att RMS attenuation error

0.3

16.5

20

dB

P_-1dBRx Output power at Rx_OUT@1dB gain comp.

Psat Tx Output power at Tx_OUTat saturation

dBm

dB

NF

Noise figure in Rx mode

5.8

ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!

Ref. : DSCHC3014-0293 - 20 Sep 10

1/20

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

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CHC3014-99F

X-band Core Chip

Main Characteristics (1/2)

Tamb.= +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Freq

Operating frequency

8

12

GHz

Mode Rx

Gl Rx

S11 Rx

S22 Rx

NF

Linear gain in Rx mode at reference state ⁽¹⁾

Input Return Loss in Rx mode

Output Return Loss in Rx mode

Noise figure in Rx mode ⁽²⁾

11.5

13.5

-14

-18

5.8

dB

P_-1dBRx Output power at Rx_OUTat 1dB gain comp.

16.5

dBm

Mode Tx

Gl Tx

S11 Tx

S22 Tx

Linear gain in Tx mode at reference state ⁽¹⁾

Input Return Loss in Tx mode

22

0

25

-14

-12

dB

Output Return Loss in Tx mode

PIN Tx

Input power range in Tx saturated mode

15

dBm

Psat Tx

Output power at Tx_OUTin saturated mode

20

Isolated Mode ⁽³⁾

Return Loss at Rx_in/Tx_out

6 bit Phase shifter ⁽⁴⁾

S11_ISO.

-15

dB

°

0-360

5.625

Phase shift elementary step

°

Peak phase error

(Rx, Tx, fine attenuator state < 33

tuning attenuator state 1)

8GHz-8.5GHz

PPE

4 ± 6

0 ± 6

4 ± 6

°

8.5GHz-11.5GHz

11.5GHz-12GHz

RMS phase error

(Rx, Tx, fine attenuator state < 33

tuning attenuator state 1)

8GHz-8.5GHz

Rms_pe

Ampvar

2.5

2

2.5

8.5GHz-11.5GHz

11.5GHz-12GHz

Amplitude variation

(Rx, Tx, fine attenuator state < 33

tuning attenuator state 1)

0 ± 1

0.3

dB

RMS Amplitude variation

(Rx, Tx, fine attenuator state < 33

tuning attenuator state 1)

Rms

Ampvar

(1) Reference state: Tuning attenuator state = 1 / Fine attenuator state = 0 /

Phase shifter state = 0

(2) Noise Figure value for Tuning attenuator state = 0 / Fine attenuator state = 0 /

Phase shifter state = 0

(3) In this mode, the MFC presents a matched load on the RF access pad Rxin/Txout

Ref. : DSCHC3014-0293 - 20 Sep 10

2/20

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X-band Core Chip

CHC3014-99F

Main Characteristics (2/2)

Tamb.= +25°C

Symbol

Parameter

Min

Typ

34.65

0.55

Max

Unit

dB

6 bit Fine Attenuator ⁽⁴⁾

Fine Attenuator elementary step

dB

Attenuation error

(Rx, all phase shifter states

tuning attenuator state 1)

Attenuation state 0-32

Attenuation state 33-47

Attenuation state 48-63

Att_err_att

Rms_att

Phi_var_att

0 ± 0.5

-0.25 ± 0.75

-0.5 ± 1.5

dB

RMS attenuation error

(Rx, all phase shifter states

tuning attenuator state 1)

0.3

Phase variation

(Rx, all phase shifter states

tuning attenuator state 1)

Attenuation state 0-32

Attenuation state 33-47

Attenuation state 48-63

0 ± 3

-1 ± 5

-4 ± 6

°

RMS Phase variation

(Rx, all phase shifter states

tuning attenuator state 1)

Rms_Phi

var

2

2 bit Tuning Attenuator ⁽⁵⁾

Tuning Attenuator elementary step

Tuning attenuation error

6

2

dB

°

Att_Err_TB

± 0.3

± 2

Phi_var_TBPhase variation of tuning attenuator

Biasing ⁽⁶⁾

V+

V-

Positive supply voltage

Negative supply voltage

5

V

-5

TI_Low

Control voltage low level

0

0.4

7.0

V

TI_High

I_+5_Rx

Control voltage high level

2.4

+3.3 / +5

V

Biasing current in RX mode

350

mA

350 ⁽⁷⁾

470 ⁽⁸⁾

I_+5_Tx

Biasing current in TX mode

mA

I_+5

interface

Control interface DC current

Negative DC current

25

mA

I_-5

-50

(4) Low influence of cross-talking between phase shifter and fine attenuator

(5) This function allows to adjust roughly the linear gain

(6) Each Amplifiers of Rx and Tx paths can be switched off thanks to separate biasing

pads (c.f. pad allocation table)

(7) Tx linear mode

(8) Tx saturated mode

Ref. : DSCHC3014-0293 - 20 Sep 10

3/20

Specifications subject to change without notice

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CHC3014-99F

X-band Core Chip

Definitions

Phase(i,j) =Phase_S21 in degree

dB_S21(i,j) =dB_S21 in dB

i: Phase state index, 0 ≤ i ≤ 63

j: Fine attenuation state index, 0 ≤ j ≤ 63

Peak Phase Error (PPE)

PPE(i,j) = Measured_Phase(S21)@state(i,j) - Measured_Phase(S21)@state(0,j) -

theoreticalPhaseValue@State(i,j)

Amplitude Variation (Ampvar)

Ampvar(i,j) = Measured_dB_S21@state(i,j) - Measured_dB_S21@state(0,j)

(i) is the phase state and in the range [0:63]

Amp var(i, j)

20

The translation of Ampvar(i,j) from dB to linear is given by: Ampvar(i,j)_lin = 10

Attenuation Error (Att_err_att

)

Att_err(i,j) = Measured_dB_S21@state(i,j) - Measured_dB_S21@state(i,0) –

theoretical_dB_S21@state(i,j)

Att _ err(i, j)

20

The translation of Att_err(i,j) from dB to linear is given by: Att_err(i,j)_lin = 10

Phase variation (Phivar_att

)

Phivar(i,j) = Measured_Phase(S21)@state(i,j) - Measured_Phase(S21)@state(i,0)

RMS Peak Phase Error (Rms_pe)

63

(PPE(i, j) − PPE)²

∑

i=0

Rms_pe =

64

63

PPE(i, j)

∑

i=0

Where PPE =

64

RMS Amplitude Variation (Rms_Ampvar)

63













1

(1− Amp var(i, j) _ lin)²(dB)





Rms_Ampvar =20log 1+

.

∑

64

i=0

Ref. : DSCHC3014-0293 - 20 Sep 10

4/20

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X-band Core Chip

CHC3014-99F

RMS Attenuation Error (Rms_att)

63













1

(1− Att _ err(i, j) _ lin)²(dB)





Rms_att = 20log 1+

.

∑

64

i=0

RMS Phase variation (Rms_Phivar)

63

(Phi var(i, j))²

∑

j=0

Rms_Phivar =

(°)

64

Absolute Maximum Ratings

Tamb.= +25°C ⁽¹⁾

Symbol

Parameter

Values

Unit

V+

Maximum positive bias voltage

6

V

V-

P_RF_RX

P_RF_TX

Ai

Negative voltage range

-6 to -4

16

V

dBm

V

Maximum peak input power overdrive in Rx mode

Maximum peak input power overdrive in Tx mode

CTRL voltage (TI_low, TI_high)

Maximum channel temperature ⁽²⁾

Operating temperature range

16

-2, +8

Tch

175

°C

Ta

-40 to +85

-55 to +125

°C

Tstg

Storage temperature range

°C

⁽¹⁾Operation of this device above anyone of these parameters may cause permanent

damage.

⁽²⁾Thermal Resistance channel to ground paddle = 40°C /W for T= +85°C

Ref. : DSCHC3014-0293 - 20 Sep 10

5/20

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CHC3014-99F

X-band Core Chip

Typical on wafer Measurements

Tamb.= +25°C

[S] parameters in Rx mode

S21 vs. Frequency

Tuning attenuator states 0-1-2-3

Noise Factor vs. Frequency

Tuning attenuator states 0-1-2-3

Fine attenuator state 0, Phase shifter state 0 Fine attenuator state 0, Phase shifter state 0

S11 vs. Frequency

S22 vs. Frequency

Tuning attenuator states 0-1-2-3

Fine attenuator states 0-1-2-4-8-16-32-63

Phase shifter states 0-1-2-4-8-16-32-63

Fine attenuator states 0-1-2-4-8-16-32-63

Phase shifter states 0-1-2-4-8-16-32-63

Ref. : DSCHC3014-0293 - 20 Sep 10

6/20

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X-band Core Chip

CHC3014-99F

Typical on wafer Measurements

Tamb.= +25°C

[S] parameters in Tx mode

S21 vs. Frequency

Tuning attenuator state 1

Fine attenuator state 0, Phase shifter state 0

S11 vs. Frequency

Tuning attenuator state 1, Fine attenuator

state 0

S22 vs. Frequency

Tuning attenuator state 1, Fine attenuator

state 0

Phase shifter states 0-1-2-4-8-16-32-63

Ref. : DSCHC3014-0293 - 20 Sep 10

7/20

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CHC3014-99F

X-band Core Chip

Typical on wafer Measurements

Tamb.= +25°C

Phase shifter performances: Phase error

Rx and Tx mode

Phase error vs. frequency

Tuning attenuator state 1

Fine attenuator states 0-8-16-32

Phase error vs. phase state

for attenuation states 0, 8, 16, 32

8GHz < Freq. < 12GHz

All phase states

Phase error RMS

Phase shift vs. phase shifter state

Tuning attenuator state 1

Fine attenuator states 0-8-16-32

Freq. = 10GHz

Atten. state: 0-8-16-32

Atten. state: 63

Ref. : DSCHC3014-0293 - 20 Sep 10

8/20

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X-band Core Chip

CHC3014-99F

Typical on wafer Measurements

Tamb.= +25°C

Phase shifter performances: Amplitude variation

Rx and Tx mode

Amplitude variation vs. frequency

Amplitude variation vs. phase state

Tuning attenuator state 1

Fine attenuator states 0-8-16-32

All phase states

8GHz < Freq. < 12GHz

Amplitude variation RMS

Tuning attenuator state 1

Fine attenuator states 0-8-16-32

Atten. state: 0-8-16-32

Atten. state: 63

Ref. : DSCHC3014-0293 - 20 Sep 10

9/20

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CHC3014-99F

X-band Core Chip

Typical on wafer Measurements

Tamb.= +25°C

Fine Attenuator performances: Attenuation error

Rx mode

Attenuation error vs. freq.

Tuning attenuator state 1

Attenuation error vs. atten. state

Tuning attenuator state 1

Phase shifter states 0-8-16-32-63

All fine attenuator states

8GHz < Freq. < 12GHz

RMS attenuation error

Tuning attenuator state 1

Phase shifter states 0-8-16-32-63

Attenuation vs. Fine attenuator state

Tuning attenuator state 1

Phase shifter states 0-8-16-32-63

Freq. = 10GHz

Ref. : DSCHC3014-0293 - 20 Sep 10

10/20

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X-band Core Chip

CHC3014-99F

Typical on wafer Measurements

Tamb.= +25°C

Fine Attenuator performances: phase variation

Rx mode

Phase variation vs. freq.

Tuning attenuator state 1

Phase variation vs. atten. state

Tuning attenuator state 1

Phase shifter states 0-8-16-32-63

8GHz < Freq. < 12GHz

RMS phase variation

Tuning attenuator state 1

Phase shifter states 0-8-16-32-63

Ref. : DSCHC3014-0293 - 20 Sep 10

11/20

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CHC3014-99F

X-band Core Chip

Typical on wafer Measurements

Tamb.= +25°C

Tuning Attenuator performances

Rx mode

Tuning attenuation error vs. freq.

Tuning attenuation error vs. attenuation state

Fine attenuator state 0, Phase shifter state 0 Fine attenuator state 0, Phase shifter state 0

Attenuation states 0–1–2-3

Tuning attenuation vs. tuning atten. state at 10GHz

Fine attenuator state 0, Phase shifter state 0

Ref. : DSCHC3014-0293 - 20 Sep 10

12/20

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X-band Core Chip

CHC3014-99F

Typical Test Fixture Measurements in Temperature

Tamb = [-40, +25, 85] °C

These values are representative of de-embedded onboard measurements as defined on the

drawing 98658.

[S] parameter in RX mode

S21 vs. Frequency

Tuning attenuator states 1

Fine attenuator state 0, Phase shifter state 0

-40°C

+25°C

+85°C

[S] parameter in TX mode

S21 vs. Frequency

Tuning attenuator states 1

Fine attenuator state 0, Phase shifter state 0

-40°C

+25°C

+85°C

Ref. : DSCHC3014-0293 - 20 Sep 10

13/20

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CHC3014-99F

X-band Core Chip

Mechanical data

4 965

4 900

4 700

4 500

2 3 4 5

6

4 235

4 065

3 895

3 725

3 555

3 385

3 215

3 045

2 875

2 705

2 535

2 365

2 195

2 025

1 855

1 685

1 515

1 345

1 175

1 005

835

7

8

9

10

11

12

13

14

2 735

2 535

2 335

1

15

16

17

18

19

20

21

22

23

570

370

170

24

27 26 25

000

105

4 470

Chip thickness = 100µm +/- 10µm.

RF pads (1, 6, 24) = 122 x 200µm²

DC and control pads (2, 3, 4, 5, 7 to 23, 25, 26, 27) = 120 x 100µm²

Pad

Description

number name

1

IO

Input/Output RF: RXout. TXin

+5V supply voltage Amp. 3

+5V supply voltage : interface

-5V supply voltage

15

16

17

18

19

20

21

22

23

24

25

26

27

-5

-5V supply voltage: interface

Switch bit 1

SA

SB

P1

P2

P3

P4

P5

P6

Rx

2

3

+5R

+5

Switch bit 2

4

-5

Phase shifter bit 1

Phase shifter bit 2

Phase shifter bit 3

Phase shifter bit 4

Phase shifter bit 5

Phase shifter bit 6

Input RF: RXin

5

+5T

TX

C1

C2

A1

A2

A3

A4

A5

A6

+5V supply voltage Amp. 4

Output RF: TXout

6

7

Coarse attenuator bit 1

Coarse attenuator bit 2

Attenuator bit 1

8

9

10

11

12

13

14

Attenuator bit 2

Attenuator bit 3

+5R +5V supply voltage Amp. 1

Attenuator bit 4

-5

-5V supply voltage

Attenuator bit 5

+5V supply voltage Amp. 2

+5

Attenuator bit 6

Ref. : DSCHC3014-0293 - 20 Sep 10

14/20

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X-band Core Chip

CHC3014-99F

Evaluation Mother board 98658

SUB-D Pin out:

1- Gnd

2- Nc

3- P6

4- P4

6- SB

7- -5V

8- A5

9- Nc

11- A1

12- C1

13- Nc

14- Nc

16- P5

17- P3

18- P1

19- SA

21- Nc

22- A4

23- A2

24- C2

5- P2

10- A3

15- Nc

20- A6

25- Nc

Ref. : DSCHC3014-0293 - 20 Sep 10

15/20

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CHC3014-99F

X-band Core Chip

Recommended assembly plan

Note: Biasing pads 2-5-25-27 can be commonly connected to the +5V supply voltage

Bonding length recommendations

Pad name

Description

Connection

IO

TX

RX

(Pad 1)

(Pad 6)

(Pad 24)

TXin/Rxout

Txout

Inductance (Lbonding) = 0.3nH

Two wires: diameter 25µm, length 0.470µm

RXin

DC and Interface

pads

Inductance (Lbonding) = 0.8nH

One wire: diameter 25µm, length 1mm

All others

Ref. : DSCHC3014-0293 - 20 Sep 10

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X-band Core Chip

CHC3014-99F

Operating mode

General Biasing conditions

Pin number

Pad name

Value

Pin number

Pad name

Value

2

+5R

+5V

15

-5

-5V

3

4

+5

-5

+5V

16

17

18

19

20

21

22

23

25

26

27

SA

SB

P1

P2

P3

P4

P5

P6

+5R

-5

0 or 3.3V

+5V

-5V

5

+5T

C1

C2

A1

A2

A3

A4

A5

A6

+5V

7

0 or 3.3V

8

9

10

11

12

13

14

-5V

+5

+5V

Switche control table

Voltage to apply on the pads SA SB:

SA

3.3

0

SB

3.3

0

Adaptative Isolation mode

RX path

TX path

3.3

0

Not used

0

Note: When the MFC is used in adaptative isolation mode, it presents a matched load to the

RF access pad RXin/TXout

Tuning attenuator control table

Voltages to apply on the pads C1 C2:

state

Att (dB)

C2

0

C1

0

1

2

3

0

2

4

6

0

3.3

0

3.3

Coarse bit control table

Ref. : DSCHC3014-0293 - 20 Sep 10

17/20

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CHC3014-99F

X-band Core Chip

Attenuator control table

Voltage to apply on the pads A1 to A6:

Att

state (dB)

A6

A5

A4

A3

A2

A1

state (dB)

A6

A5

A4

A3

A2

A1

0

33

34

35

36

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

18.15 3.3

18.7 3.3

19.25 3.3

19.8 3.3

20.35 3.3

20.9 3.3

21.45 3.3

22 3.3

22.55 3.3

23.1 3.3

23.65 3.3

24.2 3.3

24.75 3.3

25.3 3.3

25.85 3.3

26.4 3.3

26.95 3.3

27.5 3.3

28.05 3.3

28.6 3.3

29.15 3.3

29.7 3.3

30.25 3.3

30.8 3.3

31.35 3.3

31.9 3.3

32.45 3.3

33 3.3

33.55 3.3

0

3.3

1

0.55

1.1

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

2

3

1.65

2.2

0

3.3

0

3.3

0

4

0

3.3

0

3.3

0

5

2.75

3.3

0

3.3

0

3.3

0

6

0

3.3

0

3.3

0

7

3.85

4.4

0

3.3

0

3.3

0

8

0

3.3

0

3.3

0

9

4.95

5.5

0

3.3

0

3.3

0

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

0

3.3

0

3.3

0

6.05

6.6

0

3.3

0

3.3

0

3.3

0

3.3

0

7.15

7.7

0

3.3

0

3.3

0

3.3

0

3.3

0

8.25

8.8

0

3.3

0

3.3

0

3.3

0

9.35

9.9

0

3.3

0

3.3

0

3.3

0

3.3

0

10.45

11

0

3.3

0

3.3

0

3.3

0

3.3

0

11.55

12.1

12.65

13.2

13.75

14.3

14.85

15.4

15.95

16.5

17.05

17.6

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

58

0

3.3

0

3.3

0

59

60

61

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

Fine attenuator control table

Ref. : DSCHC3014-0293 - 20 Sep 10

18/20

Specifications subject to change without notice

Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

X-band Core Chip

CHC3014-99F

Phase shifter control table

Voltage to apply on the pads P1 to P6:

Phase

(deg)

Phase

(deg)

state

P6

P5

P4

P3

P2

P1

state

33

P6

P5

P4

P3

P2

P1

0

-185.625

-191.25

-196.875

-202.5

3.3

0

3.3

1

-5.625

-11.25

-16.875

-22.5

0

3.3

0

3.3

0

34

35

36

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

3.3

0

3.3

0

2

0

3.3

0

3.3

0

3

0

3.3

0

3.3

0

4

0

3.3

0

-208.125

-213.75

-219.375

-225

0

3.3

0

5

-28.125

-33.75

-39.375

-45

0

3.3

0

3.3

0

6

0

3.3

0

3.3

0

7

0

3.3

0

3.3

0

8

0

3.3

0

-230.625

-236.25

-241.875

-247.5

0

3.3

0

9

-50.625

-56.25

-61.875

-67.5

0

3.3

0

3.3

0

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

-253.125

-258.75

-264.375

-270

0

3.3

0

-73.125

-78.75

-84.375

-90

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

-275.625

-281.25

-286.875

-292.5

0

3.3

0

-95.625

-101.25

-106.875

-112.5

-118.125

-123.75

-129.375

-135

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

-298.125

-303.75

-309.375

-315

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

-320.625

-326.25

-331.875

-337.5

0

3.3

0

-140.625

-146.25

-151.875

-157.5

-163.125

-168.75

-174.375

-180

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

3.3

0

-343.125

0

3.3

0

3.3

0

3.3

0

3.3

0

Phase shifter control table

Ref. : DSCHC3014-0293 - 20 Sep 10

19/20

Specifications subject to change without notice

Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

CHC3014-99F

X-band Core Chip

Recommended ESD management

Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD

sensitivity and handling recommendations for the UMS products.

Ordering Information

Chip form:

CHC3014-99F/00

Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors

S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of

patents or other rights of third parties which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all

information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use

as critical components in life support devices or systems without express written approval from United

Monolithic Semiconductors S.A.S.

Ref. : DSCHC3014-0293 - 20 Sep 10

20/20

Specifications subject to change without notice

Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09


型号：	CHC3014-99F_15
厂家：	UNITED MONOLITHIC SEMICONDUCTORS
描述：	X-band Core Chip
文件：	总20页 (文件大小：1358K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CHC3014-99F_15 [UMS]

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