UM5080A [UNIONSEMI]

Low Capacitance Bidirectional Single Line TVS Protection Diode;
UM5080A
型号: UM5080A
厂家: Union Semiconductor, Inc.    Union Semiconductor, Inc.
描述:

Low Capacitance Bidirectional Single Line TVS Protection Diode

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UM5080  
Low Capacitance Bidirectional Single Line TVS  
Protection Diode  
UM5080 DFN2 1.0×0.6  
UM5080A DFN2 1.0×0.6  
General Description  
The UM5080(A) TVS protection diode is designed to replace multilayer varistors (MLVs) in  
portable applications such as cell phones, notebook computers, and PDA’s. They feature large  
cross-sectional area junctions for conducting high transient currents, offer desirable electrical  
characteristics for board level protection, such as fast response time, lower operating voltage,  
lower clamping voltage and no device degradation when compared to MLVs. The UM5080(A)  
TVS protection diode protects sensitive semiconductor components from damage or upset due to  
electrostatic discharge (ESD) and other voltage induced transient events. The UM5080(A) is  
available in DFN2 1.0×0.6 (compatible with SOD923/SOD882/CSP 1.0×0.6) package with  
working voltages of 5 volt. It gives designer the flexibility to protect bidirectional single line in  
applications where arrays are not practical. Additionally, it may be “sprinkled” around the board  
in applications where board space is at a premium. It may be used to meet the ESD immunity  
requirements of IEC 61000-4-2, ±30kV air, ±30kV contact discharge.  
Applications  
Features  
Transient protection for data lines to  
IEC 61000-4-2 (ESD) ±30kV (air), ±30kV  
(contact)  
Cell Phone Handsets and Accessories  
Personal Digital Assistants (PDA’s)  
Notebooks, Desktops and Servers  
Portable Instrumentation  
Cordless Phones  
Smart Card  
Digital Cameras  
MP3 Players  
Small package for use in portable electronics  
Suitable replacement for MLV’s in ESD protection  
applications  
Bidirectional TVS protection  
Stand off voltages: 5V  
Low leakage current  
Low diode capacitance  
Small Body Outline Dimensions: 1.0mm×0.6mm  
Pin Configurations  
Top View  
UM5080(A)  
DFN2 1.0×0.6  
________________________________________________________________________  
http://www.union-ic.com Rev.08 Feb.2012 1/6  
UM5080  
Ordering Information  
Part  
Number  
Working  
Voltage  
Marking  
Code  
Packaging Type  
DFN2 1.0×0.6mm2  
DFN2 1.0×0.6mm2  
Channel  
Shipping Qty  
5000/7 Inch  
Tape & Reel  
8000/7 Inch  
Tape & Reel  
UM5080  
5.0V  
5.0V  
1
1
P
P
UM5080A  
Absolute Maximum Ratings  
RATING  
Peak Pulse Power (tp = 8/20μs)  
Maximum Peak Pulse Current (t=8/20μs)  
Lead Soldering Temperature  
Operating Temperature  
SYMBOL  
VALUE  
140  
UNITS  
Watts  
PPK  
IPP  
11  
Amps  
TL  
260 (10 sec.)  
-55 to +125  
-55 to +150  
°C  
°C  
°C  
TJ  
Storage Temperature  
TSTG  
Symbol Definition  
PARAMETER  
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ Ipp  
SYMBOL  
IPP  
VC  
Working Peak Reverse Voltage  
Maximum Reverse Leakage Current @ VRWM  
Breakdown Voltage @ IT  
VRWM  
IR  
VBR  
IT  
Test Current  
Peak Power Dissipation  
Max. Capacitance @ VR = 0V, f = 1MHz  
PPK  
CJ  
________________________________________________________________________  
http://www.union-ic.com Rev.08 Feb.2012 2/6  
UM5080  
Electrical Characteristics (T=25°C, Device for 5.0V Reverse Stand-off Voltage)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Reverse Stand-Off  
Voltage  
VRWM  
5
V
Reverse Breakdown  
Voltage  
VBR  
IR  
IT = 1mA  
6.5  
8.5  
V
Reverse Leakage Current  
VRWM = 5V, T=25°C  
1
μA  
IPP = 5A, tp = 8/20μS  
9.7  
Clamping Voltage  
VC  
CJ  
V
IPP =11A, tp = 8/20μS  
VR = 0V, f = 1MHz  
VR = 2.5V, f = 1MHz  
13.6  
Junction Capacitance  
25  
40  
30  
pF  
pF  
Junction Capacitance  
CJ  
20  
Reverse dynamic resistance  
Forward dynamic resistance  
Rdyn,rev  
Rdyn,fwd  
0.55  
0.35  
I
PP >2A  
Ω
Typical Operating Characteristics  
Clamping Voltage vs. Peak Pulse Current  
Non-Repetitive Peak Pulse Power vs. Pulse Time  
1
14  
13  
12  
11  
10  
9
0.1  
8
Waveform  
parameters:  
tr=8uS  
7
td=20uS  
6
0.02  
0.04 0.1  
1
10  
100  
1000  
0
2
4
6
8
10  
12  
Pulse Duration - tp(uS)  
Peak Pulse Current - Ipp(A)  
Junction Capacitance vs. Reverse Voltage  
30  
25  
20  
15  
10  
5
0
0
1
2
3
4
5
Reverse Voltage (V)  
________________________________________________________________________  
http://www.union-ic.com Rev.08 Feb.2012 3/6  
UM5080  
Applications Information  
Device Connection Options  
UM5080(A) ESD protection diode is designed to protect one bidirectional data, I/O or power  
supply line from the damage caused by ESD and surge pulses. The device is bidirectional and may  
be used on lines where the signal polarity is above ground and below ground.  
Circuit Board Layout Recommendations for Suppression of ESD  
Good circuit board layout is critical for the suppression of ESD induced transients. The following  
guidelines are recommended:  
1. Place the TVS near the input terminals or connectors to restrict transient coupling.  
2. Minimize the path length between the TVS and the protected line.  
3. Minimize all conductive loops including power and ground loops.  
4. The ESD transient return path to ground should be kept as short as possible.  
5. Never run critical signals near board edges.  
6. Use ground planes whenever possible. For multilayer printed-circuit boards, use ground  
vias.  
7. Keep parallel signal paths to a minimum.  
8. Avoid running protection conductors in parallel with unprotected conductor.  
9. Avoid using shared transient return paths to a common ground point.  
________________________________________________________________________  
http://www.union-ic.com Rev.08 Feb.2012  
4/6  
UM5080  
Package Information  
Outline Drawing  
UM5080(A) DFN2 1.0×0.6  
millimeters  
Min Max  
Inches  
Symbol  
Min  
Max  
A
A1  
b
0.450 0.550 0.018 0.021  
0.000 0.050 0.000 0.002  
0.190 0.300 0.007 0.012  
0.950 1.075 0.037 0.042  
0.550 0.675 0.022 0.027  
0.340 0.550 0.013 0.022  
D
E
E1  
e
0.650  
0.026  
R
0.050 0.150 0.002 0.006  
Note: R is Optional.  
DIMENSIONS  
MILLIMETERS  
Symbol  
Min  
0.40  
0.00  
Max  
-
-
A
A1  
A3  
D
E
0.50  
0.05  
0.125REF  
1.00  
0.95  
0.55  
0.20  
0.45  
1.05  
0.65  
0.30  
0.55  
0.60  
0.25  
0.50  
b
L
e
0.65BSC  
Land Pattern  
NOTES:  
1. Compound dimension: 1.00×0.60;  
2. Unit: mm;  
3.General tolerance ±0.025 mm unless otherwise  
specified;  
4. The layout is just for reference.  
Tape and Reel Orientation  
________________________________________________________________________  
http://www.union-ic.com Rev.08 Feb.2012 5/6  
UM5080  
IMPORTANT NOTICE  
The information in this document has been carefully reviewed and is believed to be accurate.  
Nonetheless, this document is subject to change without notice. Union assumes no responsibility  
for any inaccuracies that may be contained in this document, and makes no commitment to update  
or to keep current the contained information, or to notify a person or organization of any update.  
Union reserves the right to make changes, at any time, in order to improve reliability, function or  
design and to attempt to supply the best product possible.  
Union Semiconductor, Inc  
Add: 2F, No. 3, Lane 647 Songtao Road, Shanghai 201203  
Tel: 021-51093966  
Fax: 021-51026018  
Website: www.union-ic.com  
________________________________________________________________________  
http://www.union-ic.com Rev.08 Feb.2012  
6/6  

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