UM5080A [UNIONSEMI]
Low Capacitance Bidirectional Single Line TVS Protection Diode;型号: | UM5080A |
厂家: | Union Semiconductor, Inc. |
描述: | Low Capacitance Bidirectional Single Line TVS Protection Diode 电视 |
文件: | 总6页 (文件大小:172K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UM5080
Low Capacitance Bidirectional Single Line TVS
Protection Diode
UM5080 DFN2 1.0×0.6
UM5080A DFN2 1.0×0.6
General Description
The UM5080(A) TVS protection diode is designed to replace multilayer varistors (MLVs) in
portable applications such as cell phones, notebook computers, and PDA’s. They feature large
cross-sectional area junctions for conducting high transient currents, offer desirable electrical
characteristics for board level protection, such as fast response time, lower operating voltage,
lower clamping voltage and no device degradation when compared to MLVs. The UM5080(A)
TVS protection diode protects sensitive semiconductor components from damage or upset due to
electrostatic discharge (ESD) and other voltage induced transient events. The UM5080(A) is
available in DFN2 1.0×0.6 (compatible with SOD923/SOD882/CSP 1.0×0.6) package with
working voltages of 5 volt. It gives designer the flexibility to protect bidirectional single line in
applications where arrays are not practical. Additionally, it may be “sprinkled” around the board
in applications where board space is at a premium. It may be used to meet the ESD immunity
requirements of IEC 61000-4-2, ±30kV air, ±30kV contact discharge.
Applications
Features
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±30kV (air), ±30kV
(contact)
Cell Phone Handsets and Accessories
Personal Digital Assistants (PDA’s)
Notebooks, Desktops and Servers
Portable Instrumentation
Cordless Phones
Smart Card
Digital Cameras
MP3 Players
Small package for use in portable electronics
Suitable replacement for MLV’s in ESD protection
applications
Bidirectional TVS protection
Stand off voltages: 5V
Low leakage current
Low diode capacitance
Small Body Outline Dimensions: 1.0mm×0.6mm
Pin Configurations
Top View
UM5080(A)
DFN2 1.0×0.6
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UM5080
Ordering Information
Part
Number
Working
Voltage
Marking
Code
Packaging Type
DFN2 1.0×0.6mm2
DFN2 1.0×0.6mm2
Channel
Shipping Qty
5000/7 Inch
Tape & Reel
8000/7 Inch
Tape & Reel
UM5080
5.0V
5.0V
1
1
P
P
UM5080A
Absolute Maximum Ratings
RATING
Peak Pulse Power (tp = 8/20μs)
Maximum Peak Pulse Current (t=8/20μs)
Lead Soldering Temperature
Operating Temperature
SYMBOL
VALUE
140
UNITS
Watts
PPK
IPP
11
Amps
TL
260 (10 sec.)
-55 to +125
-55 to +150
°C
°C
°C
TJ
Storage Temperature
TSTG
Symbol Definition
PARAMETER
Maximum Reverse Peak Pulse Current
Clamping Voltage @ Ipp
SYMBOL
IPP
VC
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
VRWM
IR
VBR
IT
Test Current
Peak Power Dissipation
Max. Capacitance @ VR = 0V, f = 1MHz
PPK
CJ
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UM5080
Electrical Characteristics (T=25°C, Device for 5.0V Reverse Stand-off Voltage)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Reverse Stand-Off
Voltage
VRWM
5
V
Reverse Breakdown
Voltage
VBR
IR
IT = 1mA
6.5
8.5
V
Reverse Leakage Current
VRWM = 5V, T=25°C
1
μA
IPP = 5A, tp = 8/20μS
9.7
Clamping Voltage
VC
CJ
V
IPP =11A, tp = 8/20μS
VR = 0V, f = 1MHz
VR = 2.5V, f = 1MHz
13.6
Junction Capacitance
25
40
30
pF
pF
Junction Capacitance
CJ
20
Reverse dynamic resistance
Forward dynamic resistance
Rdyn,rev
Rdyn,fwd
0.55
0.35
I
PP >2A
Ω
Typical Operating Characteristics
Clamping Voltage vs. Peak Pulse Current
Non-Repetitive Peak Pulse Power vs. Pulse Time
1
14
13
12
11
10
9
0.1
8
Waveform
parameters:
tr=8uS
7
td=20uS
6
0.02
0.04 0.1
1
10
100
1000
0
2
4
6
8
10
12
Pulse Duration - tp(uS)
Peak Pulse Current - Ipp(A)
Junction Capacitance vs. Reverse Voltage
30
25
20
15
10
5
0
0
1
2
3
4
5
Reverse Voltage (V)
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UM5080
Applications Information
Device Connection Options
UM5080(A) ESD protection diode is designed to protect one bidirectional data, I/O or power
supply line from the damage caused by ESD and surge pulses. The device is bidirectional and may
be used on lines where the signal polarity is above ground and below ground.
Circuit Board Layout Recommendations for Suppression of ESD
Good circuit board layout is critical for the suppression of ESD induced transients. The following
guidelines are recommended:
1. Place the TVS near the input terminals or connectors to restrict transient coupling.
2. Minimize the path length between the TVS and the protected line.
3. Minimize all conductive loops including power and ground loops.
4. The ESD transient return path to ground should be kept as short as possible.
5. Never run critical signals near board edges.
6. Use ground planes whenever possible. For multilayer printed-circuit boards, use ground
vias.
7. Keep parallel signal paths to a minimum.
8. Avoid running protection conductors in parallel with unprotected conductor.
9. Avoid using shared transient return paths to a common ground point.
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UM5080
Package Information
Outline Drawing
UM5080(A) DFN2 1.0×0.6
millimeters
Min Max
Inches
Symbol
Min
Max
A
A1
b
0.450 0.550 0.018 0.021
0.000 0.050 0.000 0.002
0.190 0.300 0.007 0.012
0.950 1.075 0.037 0.042
0.550 0.675 0.022 0.027
0.340 0.550 0.013 0.022
D
E
E1
e
0.650
0.026
R
0.050 0.150 0.002 0.006
Note: R is Optional.
DIMENSIONS
MILLIMETERS
Symbol
Min
0.40
0.00
Max
-
-
A
A1
A3
D
E
0.50
0.05
0.125REF
1.00
0.95
0.55
0.20
0.45
1.05
0.65
0.30
0.55
0.60
0.25
0.50
b
L
e
0.65BSC
Land Pattern
NOTES:
1. Compound dimension: 1.00×0.60;
2. Unit: mm;
3.General tolerance ±0.025 mm unless otherwise
specified;
4. The layout is just for reference.
Tape and Reel Orientation
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UM5080
IMPORTANT NOTICE
The information in this document has been carefully reviewed and is believed to be accurate.
Nonetheless, this document is subject to change without notice. Union assumes no responsibility
for any inaccuracies that may be contained in this document, and makes no commitment to update
or to keep current the contained information, or to notify a person or organization of any update.
Union reserves the right to make changes, at any time, in order to improve reliability, function or
design and to attempt to supply the best product possible.
Union Semiconductor, Inc
Add: 2F, No. 3, Lane 647 Songtao Road, Shanghai 201203
Tel: 021-51093966
Fax: 021-51026018
Website: www.union-ic.com
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