UD2401 [UNITPOWER]
P-Ch 20V Fast Switching MOSFETs; P沟道20V的快速开关MOSFET
| 型号： | UD2401 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | P-Ch 20V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：759K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UD2401
P-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The UD2401 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDS(ON)
ID
-20V
52mΩ
-18.4A
Applications
The UD2401 meet the RoHS and Green Product
requirement , with full function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
-20
Units
V
Drain-Source Voltage
VGS
Gate-Source Voltage
±12
-18.4
-11.6
-5.2
V
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Continuous Drain Current, VGS @ -4.5V1
Pulsed Drain Current2
A
A
A
-4.2
A
-50
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation3
Total Power Dissipation3
25
W
W
℃
℃
2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
62
Unit
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
RθJC
---
5
1
UD2401
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-20
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=-1mA
VGS=-4.5V , ID=-15A
-0.014
42
---
V/℃
---
52
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=-2.5V , ID=-10A
---
67
85
VGS(th)
Gate Threshold Voltage
-0.5
---
-0.8
3.95
---
-1.2
---
V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
VDS=-16V , VGS=0V , TJ=55℃
---
1
IDSS
Drain-Source Leakage Current
uA
---
---
5
V
GS=±12V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
---
±100
---
nA
S
VDS=-5V , ID=-15A
---
16.4
11.1
2.67
3.26
5.2
Qg
---
15.5
3.7
VDS=-15V , VGS=-4.5V , ID=-15A
nC
Qgs
Qgd
Td(on)
Tr
---
---
4.6
Turn-On Delay Time
Rise Time
---
10.4
23
VDD=-10V , VGS=-4.5V ,
---
12.8
28.8
16
ns
Td(off)
Tf
Turn-Off Delay Time
Fall Time
RG=3.3Ω, ID=-15A
---
58
---
32
Ciss
Coss
Crss
Input Capacitance
---
857
114
108
1200
160
151
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
-18.4
-50
-1
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=-1A , TJ=25℃
IF=-15A , dI/dt=100A/µs ,
TJ=25℃
---
---
V
---
11.6
2.6
---
nS
nC
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD2401
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics
100
80
-ID=10A
60
40
1
2
3
4
5
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
4
3
T =150
J
T =25
J
℃
℃
2
1
0
0
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
℃
J
℃
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
UD2401
P-Ch 20V Fast Switching MOSFETs
1000
100
10
Ciss
Coss
Crss
F=1.0MHz
1
5
9
13
17
21
-VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.05
0.02
0.1
0.01
PDM
SINGLE PULSE
TON
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.01
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.11 Gate Charge Waveform
Fig.10 Switching Time Waveform
4
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