UD3015 [UNITPOWER]
P-Ch 30V Fast Switching MOSFETs; P沟道30V的快速开关MOSFET
| 型号： | UD3015 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | P-Ch 30V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：707K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UD3015
P-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UD3015 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDSON
ID
-30V
10.5mΩ
-57A
Applications
The UD3015 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
-30
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
V
±20
-57
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
A
-36
A
-17.8
-14.2
-11.3
-9
A
A
-180
408
A
EAS
Single Pulse Avalanche Energy3
mJ
A
IAS
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
-55.4
52.1
PD@TC=25℃
PD@TA=25℃
TSTG
W
W
℃
℃
5
2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
Unit
℃/W
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
62
25
RθJA
---
RθJC
---
2.4
1
UD3015
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-30
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=-1mA
VGS=-10V , ID=-30A
-0.018
8
---
V/℃
---
10.5
18.5
-2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=-4.5V , ID=-15A
---
14
VGS(th)
Gate Threshold Voltage
-1.0
---
-1.6
5.04
---
V
VGS=VDS , ID =-250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
VDS=-24V , VGS=0V , TJ=55℃
---
1
IDSS
Drain-Source Leakage Current
uA
---
---
5
V
GS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
---
---
±100
---
nA
S
VDS=-5V , ID=-30A
---
26.4
33
Qg
---
---
VDS=-15V , VGS=-4.5V , ID=-15A
nC
Qgs
Qgd
Td(on)
Tr
---
10.7
12.8
8
---
---
---
Turn-On Delay Time
Rise Time
---
---
VDD=-15V , VGS=-10V , RG=3.3Ω,
---
17.8
78.4
43.6
3448
508
421
---
ns
ID=-15A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
---
---
---
Ciss
Coss
Crss
Input Capacitance
---
---
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
---
---
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
120
---
---
mJ
VDD=-25V , L=0.1mH , IAS=-30A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
-57
-180
-1.2
---
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=-1A , TJ=25℃
IF=-15A , dI/dt=100A/µs ,
TJ=25℃
---
---
V
---
29
15
nS
nC
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-55.4A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD3015
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
13
12
11
10
9
200
180
160
140
120
100
80
ID=-30A
VGS=-10V
VGS=-7V
VGS=-5V
VGS=-4.5V
VGS=-3V
60
40
8
20
0
7
0
1
2
3
4
5
4
6
8
10
-VDS Drain-to-Source Voltage (V)
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
10
12
10
8
ID=-15A
8
6
4
2
0
6
T =150
T =25
℃
℃
J
J
VDS=15V
VDS=24V
4
2
0
0.2
0.4
0.6
0.8
1
0
20
40
60
80
-VSD , Source-to-Drain Voltage (V)
QG , Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
J
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
℃
J
℃
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
3
UD3015
P-Ch 30V Fast Switching MOSFETs
10000
1000
100
1000.00
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
Coss
Crss
10ms
100ms
DC
0.10
Tc=25oC
Single Pulse
0.01
10
0.1
1
10
100
1
5
9
13
17
21
25
-VDS , Drain to Source Voltage(V)
-VDS (V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
PDM
SINGLE PULSE
TON
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
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