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UD4001 [UNITPOWER]

P-Ch 40V Fast Switching MOSFETs; P沟道40V的快速开关MOSFET
UD4001
型号： UD4001
厂家： ShenZhen XinDeYi Electronics Co., Ltd.    ShenZhen XinDeYi Electronics Co., Ltd.
描述：

P-Ch 40V Fast Switching MOSFETs
P沟道40V的快速开关MOSFET

开关
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中文：  中文翻译
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UD4001  
P-Ch 40V Fast Switching MOSFETs  
General Description  
Product Summery  
The UD4001 is the highest performance trench  
P-ch MOSFETs with extreme high cell density ,  
which provide excellent RDSON and gate charge  
for most of the synchronous buck converter  
applications .  
BVDSS  
RDS(ON)  
ID  
-40V  
65mΩ  
-16A  
Applications  
The UD4001 meet the RoHS and Green Product  
requirement , 100% EAS guaranteed with full  
function reliability approved.  
z High Frequency Point-of-Load Synchronous  
Buck Converter for MB/NB/UMPC/VGA  
z Networking DC-DC Power System  
z Load Switch  
Features  
TO252 Pin Configuration  
z Advanced high cell density Trench technology  
z Super Low Gate Charge  
z Excellent CdV/dt effect decline  
z 100% EAS Guaranteed  
z Green Device Available  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-40  
Units  
V
VDS  
Drain-Source Voltage  
VGS  
ID@TC=25℃  
ID@TC=100℃  
IDM  
Gate-Source Voltage  
±20  
-16  
V
Continuous Drain Current, -VGS @ -10V1  
Continuous Drain Current, -VGS @ -10V1  
Pulsed Drain Current2  
A
-12  
A
-32  
A
EAS  
Single Pulse Avalanche Energy3  
39  
mJ  
A
IAS  
Avalanche Current  
Total Power Dissipation4  
-20.5  
25  
PD@TC=25℃  
TSTG  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
RθJA  
Parameter  
Typ.  
---  
Max.  
62  
Unit  
℃/W  
℃/W  
Thermal Resistance Junction-Ambient 1  
Thermal Resistance Junction-Case1  
RθJC  
---  
5
1
UD4001  
P-Ch 40V Fast Switching MOSFETs  
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)  
Symbol  
Parameter  
Conditions  
VGS=0V , ID=-250uA  
Min.  
-40  
---  
Typ.  
---  
Max.  
---  
Unit  
V
BVDSS  
Drain-Source Breakdown Voltage  
BVDSS Temperature Coefficient  
△BVDSS/△TJ  
Reference to 25℃, ID=-1mA  
VGS=-10V , ID=-8A  
-0.015  
52  
---  
V/℃  
---  
65  
100  
-2.5  
---  
RDS(ON)  
Static Drain-Source On-Resistance2  
mΩ  
VGS=-4.5V , ID=-4A  
---  
80  
VGS(th)  
Gate Threshold Voltage  
-1.0  
---  
-1.6  
3.52  
---  
V
VGS=VDS , ID =-250uA  
△VGS(th)  
V
GS(th) Temperature Coefficient  
V/℃  
VDS=-32V , VGS=0V , TJ=25℃  
VDS=-32V , VGS=0V , TJ=55℃  
---  
1
IDSS  
Drain-Source Leakage Current  
uA  
---  
---  
5
V
GS=±20V , VDS=0V  
IGSS  
gfs  
Gate-Source Leakage Current  
Forward Transconductance  
Total Gate Charge (-4.5V)  
Gate-Source Charge  
Gate-Drain Charge  
---  
---  
±100  
---  
nA  
S
VDS=-10V , ID=-10A  
---  
6
Qg  
---  
5.8  
1.18  
2.12  
13.2  
8
---  
VDS=-20V , VGS=-4.5V , ID=-8A  
nC  
Qgs  
Qgd  
Td(on)  
Tr  
---  
---  
---  
---  
Turn-On Delay Time  
Rise Time  
---  
---  
VDD=-12V , VGS=-10V , RG=3.3Ω,  
---  
---  
ns  
ID=-1A  
Td(off)  
Tf  
Turn-Off Delay Time  
Fall Time  
---  
40.4  
3.5  
620  
69  
---  
---  
---  
Ciss  
Coss  
Crss  
Input Capacitance  
---  
---  
VDS=-15V , VGS=0V , f=1MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
---  
---  
---  
52  
---  
Guaranteed Avalanche Characteristics  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
EAS  
Single Pulse Avalanche Energy5  
9.4  
---  
---  
mJ  
VDD=-25V , L=0.1mH , IAS=-10A  
Diode Characteristics  
Symbol  
Parameter  
Conditions  
Min.  
---  
Typ.  
---  
Max.  
-16  
Unit  
A
IS  
Continuous Source Current1,6  
Pulsed Source Current2,6  
Diode Forward Voltage2  
VG=VD=0V , Force Current  
ISM  
VSD  
---  
---  
-32  
A
VGS=0V , IS=-1A , TJ=25℃  
---  
---  
-1.2  
V
Note :  
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%  
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-20.5A  
4.The power dissipation is limited by 150℃ junction temperature  
5.The Min. value is 100% EAS tested guarantee.  
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  
2
UD4001  
P-Ch 40V Fast Switching MOSFETs  
Typical Characteristics  
250  
210  
170  
130  
90  
12  
ID=-8A  
10  
8
VGS=-10V  
VGS=-7V  
VGS=-5V  
VGS=-4.5V  
6
4
2
VGS=-3V  
1.5  
0
50  
0
0.5  
1
2
2
4
6
8
10  
-VDS Drain-to-Source Voltage (V)  
-VGS (V)  
Fig.1 Typical Output Characteristics  
Fig.2 On-Resistance v.s Gate-Source  
10  
8
10  
VDS=-20V  
ID=-8A  
7.5  
5
6
4
T =150  
T =25  
℃
J
℃
J
2.5  
0
2
0
0.2  
0.4  
0.6  
0.8  
1
0
4
8
12  
-VSD , Source-to-Drain Voltage (V)  
QG , Total Gate Charge (nC)  
Fig.3 Forward Characteristics Of Reverse  
Fig.4 Gate Charge Characteristics  
2.0  
1.5  
1.5  
1.0  
0.5  
1
0.5  
0
-50  
0
50  
100  
150  
-50  
0
J
50  
100  
150  
T ,Junction Temperature (  
)
T , Junction Temperature ( )  
℃
J
℃
Fig.5 Normalized VGS(th) v.s TJ  
Fig.6 Normalized RDSON v.s TJ  
3
UD4001  
P-Ch 40V Fast Switching MOSFETs  
1000  
100  
10  
100.00  
10.00  
1.00  
F=1.0MHz  
Ciss  
100us  
1ms  
10ms  
Coss  
Crss  
100ms  
DC  
0.10  
Tc=25oC  
Single Pulse  
0.01  
0.1  
1
10  
100  
1
5
9
13  
17  
21  
25  
-VDS Drain to Source Voltage(V)  
-VDS (V)  
Fig.7 Capacitance  
Fig.8 Safe Operating Area  
1
DUTY=0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
PDM  
TON  
T
D = TON/T  
TJpeak = TC + PDM x RθJC  
0.01  
SINGLE PULSE  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Pulse Width (s)  
Fig.9 Normalized Maximum Transient Thermal Impedance  
Fig.10 Switching Time Waveform  
Fig.11 Unclamped Inductive Waveform  
4

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