UI0008 [UNITPOWER]
N-Ch 100V Fast Switching MOSFETs; N-CH 100V快速开关MOSFET
| 型号： | UI0008 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | N-Ch 100V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：750K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UI0008
N-Ch 100V Fast Switching MOSFETs
General Description
Product Summery
The UI0008 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDS(ON)
ID
100V
310mΩ
5.4A
Applications
The UI0008 meet the RoHS and Green Product
requirement with full function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
z Power Tool Application
Features
TO251 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
100
Units
V
Drain-Source Voltage
VGS
Gate-Source Voltage
±20
5.4
V
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
A
3.4
A
1.7
A
1.3
A
11
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation3
Total Power Dissipation3
20.8
W
W
℃
℃
2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
62
Unit
℃/W
℃/W
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
RθJC
---
6
1
UI0008
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
100
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=5A
0.0672
260
270
1.5
---
V/℃
310
320
2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=3A
VGS(th)
Gate Threshold Voltage
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
-4.12
---
mV/℃
VDS=80V , VGS=0V , TJ=25℃
VDS=80V , VGS=0V , TJ=55℃
10
IDSS
Drain-Source Leakage Current
uA
---
100
±100
---
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
nA
S
VDS=5V , ID=3A
5.4
Rg
VDS=0V , VGS=0V , f=1MHz
2.5
5
Ω
Qg
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
9.6
13.4
2.56
2.6
2.8
55
VDS=80V , VGS=10V , ID=5A
nC
ns
Qgs
Qgd
Td(on)
Tr
1.83
1.85
1.4
VDD=50V , VGS=10V , RG=3.3Ω
30.6
11.2
6
ID=5A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
22
12
Ciss
Coss
Crss
Input Capacitance
508
29
711
41
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
16.4
23
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
5.4
11
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
---
V
---
20
19
nS
nC
IF=5A , dI/dt=100A/µs , TJ=25℃
Qrr
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UI0008
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
8.0
VGS=10V
VGS=7V
VGS=5V
6.0
4.0
2.0
0.0
VGS=4.5V
VGS=3V
0
1
2
3
4
5
VDS ,Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
1.5
1
T =150
T =25
℃
J
℃
J
0.5
0
0.00
0.25
0.50
0.75
1.00
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.5
2.0
1.5
1.0
0.5
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
℃
T , Junction Temperature (
J
)
℃
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
UI0008
N-Ch 100V Fast Switching MOSFETs
1000
100
10
F=1.0MHz
Ciss
Coss
Crss
1
5
9
13
17
21
25
VDS Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
PDM
0.05
0.02
TON
T
D = TON/T
0.01
TJpeak = TC+PDMXRθJC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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