UM0204 [UNITPOWER]
Dual N-Ch 100V Fast Switching MOSFETs; 双N -CH 100V快速开关MOSFET
| 型号： | UM0204 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | Dual N-Ch 100V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：701K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UM0204
Dual N-Ch 100V Fast Switching MOSFETs
General Description
Product Summery
The UM0204 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDSON
ID
80mΩ
100V
3.3A
Applications
The UM0204 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
SOP8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±20
3.3
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
A
2.7
A
17
A
EAS
Single Pulse Avalanche Energy3
10
mJ
A
IAS
Avalanche Current
14
PD@TA=25℃
TSTG
Total Power Dissipation4
2.0
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
62.5
40
Unit
℃/W
℃/W
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
RθJC
---
1
UM0204
Dual N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Reference to 25℃, ID=1mA
=4A
Min.
100
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
0.044
63.5
---
V/℃
---
80
VGS=10V , ID
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=3A
---
1.6
---
70
2.2
---
91
2.7
---
VGS(th)
Gate Threshold Voltage
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=48V , VGS=0V , TJ=25℃
VDS=48V , VGS=0V , TJ=55℃
---
---
1
IDSS
Drain-Source Leakage Current
uA
---
---
5
V
GS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
---
±100
---
nA
S
VDS=5V , ID=3A
---
20
=0V , f=1MHz
0.7
13
1.45
16.3
4.1
2.8
2.2
20
Rg
VDS=0V , VGS
Ω
Qg
Total Gate Charge (10V)
Gate-Drain Charge
2.4
2.2
5.8
3.4
VDS=50V , VGS=10V , ID=3A
nC
ns
Qgs
Qgd
Td(on)
Tr
Gate-Source Charge
Turn-On Delay Time
Turn-Off Delay Time
---
---
6
---
---
VDD=50V , VGS=10V , RG=3Ω
21
Td(off)
Tf
Fall Time
---
---
2.4
2.5
---
---
Rise Time
Ciss
Coss
Crss
Input Capacitance
620
38
778
55
974
81
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
13
24
35
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
15.4
---
---
mJ
VDD=25V , L=0.1mH , IAS=15A
Diode Characteristics
Symbol
Parameter
Continuous Source Current1,6
Conditions
Min.
Typ.
Max.
Unit
G=V
V
D=0V , Force Current
IS
---
---
2.5
A
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UM0204
Dual N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
60
20
ID=4A
VGS=10V
VGS=7V
VGS=5V
VGS=4.5V
53
45
38
30
15
10
5
VGS=3V
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
VDS , Drain-to-Source Voltage (V)
VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
8
6
4
2
0
T =150
T =25
℃
J
℃
J
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
2.2
1.8
1.4
1.0
0.6
0.2
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
℃
T , Junction Temperature ( )
℃
J
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
UM0204
Dual N-Ch 100V Fast Switching MOSFETs
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
25
VDS Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
PDM
TON
T
D = TON/T
SINGLE
TJpeak = TA+PDMXRθJA
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
相关型号：
©2020 ICPDF网 联系我们和版权申明