UM3016 [UNITPOWER]
N-Ch 30V Fast Switching MOSFETs; N-CH 30V的快速开关MOSFET
| 型号： | UM3016 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | N-Ch 30V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：1015K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UM3016
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UM3016 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
S(ON)
BVDSS
RD
ID
30V
4mΩ
15A
Applications
The UM3016 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
S0P8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±20
15
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
A
12
A
75
A
EAS
Single Pulse Avalanche Energy3
317
mJ
A
IAS
Avalanche Current
53.8
PD@TA=25℃
TSTG
Total Power Dissipation4
1.5
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
85
Unit
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
RθJC
---
24
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1
UM3016
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=15A
0.021
3.4
---
V/℃
4
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=10A
5.2
6
VGS(th)
Gate Threshold Voltage
1.5
2.5
---
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
-5.73
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
VDS=24V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=5V , ID=15A
26.5
1.4
Rg
VDS=10V , VGS=0V , f=1MHz
2.8
Ω
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
31.6
6.1
VDS=20V , VGS=4.5V , ID=12A
nC
ns
Qgs
Qgd
Td(on)
Tr
13.8
11.2
49
VDD=15V , VGS=10V , RG=1.5Ω
ID=15A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
35
7.8
Ciss
Coss
Crss
Input Capacitance
3075
400
315
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
98
---
---
mJ
VDD=25V , L=0.1mH , IAS=30A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
15
Unit
A
IS
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
VG=VD=0V , Force Current
ISM
VSD
---
---
75
A
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
A n n i e w a n g : y u e - y u e 0 5 0 8 @ 1 6 3 . c o m
1 3 7 1 4 4 7 0 6 2 1
2
UM3016
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
120
5.0
4.5
4.0
3.5
3.0
ID=12A
100
80
60
40
20
0
VGS=10V
VGS=7V
VGS=5V
VGS=4.5V
VGS=3V
0
0.25
0.5
0.75
1
2
4
6
8
10
VDS , Drain-to-Source Voltage (V)
VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
8
12
10
8
ID=12A
6
6
T =175
T =25
℃
J
℃
4
J
4
2
2
0
0
0
20
40
60
80
0
0.3
0.6
0.9
1.2
VSD , Source-to-Drain Voltage (V)
QG , Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
25
100
175
-50
25
100
175
T ,Junction Temperature (
)
℃
T , Junction Temperature (
)
℃
J
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
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3
UM3016
N-Ch 30V Fast Switching MOSFETs
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
1ms
Coss
Crss
10ms
100ms
0.10
DC
TA=25oC
Single Pulse
0.01
10
0.01
0.1
1
10
100
1
1
5
9
13
17
21
25
VDS Drain to Source Voltage(V)
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
PDM
TON
T
D = TON/T
SINGLE
TJpeak = TA+PDMXRθJA
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
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