UM4803 [UNITPOWER]
N-Ch and P-Ch Fast Switching MOSFETs; N沟道和P沟道快速开关MOSFET
| 型号： | UM4803 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | N-Ch and P-Ch Fast Switching MOSFETs |
| 文件： | 总7页 (文件大小：1126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UM4803
N-Ch and P-Ch Fast Switching MOSFETs
General Description
Product Summery
The UM4803 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
BVDSS
40V
RDS(ON)
26mΩ
40mΩ
ID
7.2A
-6.5A
-40V
The UM4803 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function reliability approved.
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z CCFL Back-light Inverter
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
SOP8 Pin Configuration
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
N-Ch
40
P-Ch
-40
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
V
V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
±20
7.2
±20
-6.5
A
5.6
-5.1
A
14.5
-13
A
EAS
Single Pulse Avalanche Energy3
28
66
mJ
A
IAS
Avalanche Current
Total Power Dissipation4
17.8
-27.2
3.1
PD@TC=25℃
TSTG
2.5
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
85
Unit
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
RθJC
---
50
1
UM4803
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=250uA
Min.
40
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=6A
0.034
22
---
V/℃
26
35
2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=4.5V , ID=4A
28
VGS(th)
Gate Threshold Voltage
1.5
-4.56
---
V
VGS=VDS , ID =250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=32V , VGS=0V , TJ=25℃
VDS=32V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=5V , ID=12A
14
Rg
VDS=0V , VGS=0V , f=1MHz
2.6
5.5
1.25
2.5
8.9
2.2
41
5.2
---
Ω
Qg
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
VDS=20V , VGS=4.5V , ID=6A
nC
ns
Qgs
Qgd
Td(on)
Tr
---
---
---
VDD=20V , VGS=10V , RG=3.3Ω
---
ID=1A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
2.7
593
76
---
Ciss
Coss
Crss
Input Capacitance
---
VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
56
---
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
9
---
---
mJ
VDD=25V , L=0.1mH , IAS=10A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
7.2
Unit
A
IS
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
VG=VD=0V , Force Current
ISM
VSD
---
---
14.5
1.2
A
VGS=0V , IS=1A , TJ=25℃
---
---
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UM4803
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-40
---
---
Typ.
---
Max.
---
Unit
V
BVDSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=-1mA
VGS=-10V , ID=-6A
-0.012
32
---
V/℃
40
65
-2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
mΩ
VGS=-4.5V , ID=-4A
---
55
VGS(th)
Gate Threshold Voltage
-1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
-1.6
4.32
---
V
VGS=VDS , ID =-250uA
△VGS(th)
V
GS(th) Temperature Coefficient
mV/℃
VDS=-32V , VGS=0V , TJ=25℃
VDS=-32V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
---
5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
±100
---
nA
S
VDS=-5V , ID=-6A
12
Rg
VDS=0V , VGS=0V , f=1MHz
13
16
---
Ω
Qg
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
9
VDS=-20V , VGS=-4.5V , ID=-6A
nC
ns
Qgs
Qgd
Td(on)
Tr
2.54
3.1
19.2
12.8
48.6
4.6
1004
108
80
---
---
---
VDD=-15V , VGS=-10V , RG=3.3Ω,
---
ID=-1A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
---
Ciss
Coss
Crss
Input Capacitance
---
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy5
20
---
---
mJ
VDD=-25V , L=0.1mH , IAS=-15A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
-6.5
-13
-1
Unit
A
IS
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
VG=VD=0V , Force Current
ISM
VSD
---
---
A
VGS=0V , IS=-1A , TJ=25℃
---
---
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
3
UM4803
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
12
40
ID=6A
10
8
VGS=10V
VGS=7V
VGS=5V
35
30
25
20
6
VGS=4.5V
4
VGS=3V
2
0
2
4
6
8
10
0
0.5
1
1.5
2
VDS Drain-to-Source Voltage (V)
VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
8
12
VDS=20V
ID=6A
8
4
0
6
T =150
T =25
℃
J
℃
J
4
2
0
0
4
8
12
16
0.00
0.25
0.50
0.75
1.00
QG , Total Gate Charge (nC)
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.7
1.4
1.1
0.8
0.5
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
℃
J
℃
J
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
4
UM4803
N-Ch and P-Ch Fast Switching MOSFETs
1000
100
10
100.00
F=1.0MHz
Ciss
10us
10.00
100us
1.00
Coss
Crss
10ms
100ms
0.10
T =25
℃
C
DC
Single Pulse
0.01
1
5
9
13
17
21
25
0.1
1
10
100
VDS Drain to Source Voltage (V)
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
TON
0.01
T
D = TON/T
0.001
TJpeak = TC+PDMXRθJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Wave
5
UM4803
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Typical Characteristics
60
12
ID=-6A
VGS=-10V
10
55
50
45
40
35
30
VGS=-7V
VGS=-5V
8
6
4
2
0
VGS=-4.5V
VGS=-3V
0
0.5
1
1.5
2
2
4
6
8
10
-VDS Drain-to-Source Voltage (V)
-VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
VDS=-20V
ID=-6A
8
6
4
2
0
6
T =150
T =25
℃
J
℃
J
4
2
0
0
6
12
18
0.2
0.4
0.6
0.8
1
-VSD , Source-to-Drain Voltage (V)
QG , Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
J
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
℃
J
℃
Fig.5 Normalized VGS(th) v.s TJ
Fig.6 Normalized RDSON v.s TJ
6
UM4803
N-Ch and P-Ch Fast Switching MOSFETs
10000
1000
100
100.00
F=1.0MHz
Ciss
10.00
1.00
0.10
0.01
100us
1ms
Coss
Crss
10ms
100ms
DC
Tc=25oC
Single Pulse
10
1
5
9
13
17
21
25
0.1
1
10
100
-VDS Drain to Source Voltage(V)
-VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
PDM
TON
T
0.02
0.01
D = TON/T
TJpeak = TC + PDM x RθJC
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
7
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