US0008 [UNITPOWER]
N-Ch 100V Fast Switching MOSFETs; N-CH 100V快速开关MOSFET
| 型号： | US0008 |
| 厂家： | 
ShenZhen XinDeYi Electronics Co., Ltd. |
| 描述： | N-Ch 100V Fast Switching MOSFETs |
| 文件： | 总4页 (文件大小：763K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US0008
N-Ch 100V Fast Switching MOSFETs
General Description
Product Summery
The US0008 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
BVDSS
RDS(ON)
ID
100V
310mΩ
1.2A
Applications
The US0008 meet the RoHS and Green Product
requirement with full function reliability approved.
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
SOT23 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
VDS
Parameter
Rating
Units
V
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
1.2
A
1
A
5
A
PD@TA=25℃
TSTG
Total Power Dissipation3
1
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
125
80
Unit
℃/W
℃/W
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
RθJC
---
1
US0008
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=250uA
Min.
100
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
Max.
---
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃, ID=1mA
VGS=10V , ID=1A
0.067
260
270
1.5
-4.2
---
---
V/℃
310
320
2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V , ID=0.5A
mΩ
V
VGS(th)
△VGS(th)
IDSS
IDSS
IGSS
gfs
Gate Threshold Voltage
VGS(th) Temperature Coefficient
Drain-Source Leakage Current
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
VGS=VDS , ID =250uA
mV/℃
uA
VDS=80V , VGS=0V , TJ=25℃
VDS=80V , VGS=0V , TJ=25℃
1
---
5
uA
VGS=±20V , VDS=0V
---
±100
---
nA
VDS=5V , ID=1A
2.4
2.8
9.7
1.6
1.7
1.6
19
S
Rg
VDS=0V , VGS=0V , f=1MHz
5.6
13.6
2.2
2.4
3.2
34
Ω
Qg
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
VDS=80V , VGS=10V , ID=1A
nC
Qgs
Qgd
Td(on)
Tr
Turn-On Delay Time
VDD=50V , VGS=10V , RG=3.3Ω
Rise Time
ns
ID=1A
Td(off)
Tf
Turn-Off Delay Time
13.6
19
27
Fall Time
38
Ciss
Input Capacitance
508
29
711
41
VDS=15V , VGS=0V , f=1MHz
pF
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
16.4
23
Diode Characteristics
Symbol
Parameter
Conditions
Min.
---
Typ.
---
Max.
1.2
5
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
VG=VD=0V , Force Current
---
---
A
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
---
V
---
14
nS
nC
IF=1A , dI/dt=100A/µs , TJ=25℃
Qrr
---
9.3
---
\
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
US0008
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
265
260
255
250
245
5.0
ID=1A
4.0
3.0
2.0
1.0
VGS=10V
VGS=7V
VGS=5V
VGS=4.5V
VGS=3V
0.0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
VDS , Drain-to-Source Voltage (V)
VGS (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
2
1.6
1.2
0.8
0.4
0
T =150
T =25
℃
J
℃
J
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.4
1.8
2.0
1.6
1.2
0.8
0.4
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction Temperature (
)
T , Junction Temperature ( )
℃
J
℃
J
Fig.6 Normalized RDSON vs. TJ
Fig.5 Normalized VGS(th) vs. TJ
3
US0008
N-Ch 100V Fast Switching MOSFETs
1000
100
10
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
10ms
100ms
0.10
1s
Coss
Crss
0.01
DC
T =25
℃
A
Single Pulse
0.00
1
5
9
13
17
21
25
0.1
1
10
VDS (V)
100
1000
VDS Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
TON
0.001 SINGLE PULSE
T
D = TON/T
TJpeak = TA + PDM x RθJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
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