P5000SB [UNSEMI]
Thyristor Surge Suppressors (TSS);型号: | P5000SB |
厂家: | UN Semiconducctor INC |
描述: | Thyristor Surge Suppressors (TSS) |
文件: | 总5页 (文件大小:627K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Thyristor Surge Suppressors (TSS)
P0080SB - P5000SB Series - DO-214AA(SMB)
@10/700μS, 4KV
Description
P0080SB - P5000SB Series are designed to protect broadband
equipment such as modems, line card, CPE and DSL from
damaging over-voltage transients.
The series provides a surface mount solution that enables
equipment to comply with global regulatory standards.
Features and Benefits
u
u
u
Low voltage overshoot
Low on-state voltage
Does not degrade surge capability after multiple surge events
within limit
Schematic Symbol
u
Fails short circuit when surged in excess of ratings
Low Capacitance
u
Applicable Global Standards
u
TIA-968-A
u
u
u
u
u
u
u
u
ITU K.20/21 Enhanced level
ITU K.20/21 Basic Level
GR 1089 Inter building
GR 1089 Inter building
IEC 6100-4-5
YD/T 1082
YD/T 993
YD/T 950
Electrical Parameters
Parameter
Definition
+I
Switching Current - maximum current required to switch to
on state
IS
IDRM
IH
Leakage Current - maximum peak off-state current
measured at VDRM
IT
Holding Current - minimum current required to maintain on
state
IS
IH
On-state Current - maximum rated continuous on-state
current
IT
IDRM
-V
+V
Switching Voltage - maximum voltage prior to switching to
on stat
VS
VT VDRM
VS
Peak Off-state Voltage - maximum voltage that can be
applied while maintaining off state
VDRM
VT
On-state Voltage - maximum voltage measured at rated
on-state current
Off-state Capacitance - typical capacitance measured in
off state
C0
-I
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Revision October 18, 2013
1 / 5
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Thyristor Surge Suppressors (TSS)
P0080SB - P5000SB Series - DO-214AA(SMB)
@10/700μS, 4KV
Electrical Characteristics
VDRM
@IDRM=5μA
VS
@100V/μS
VT
@IT=2.2A
C0
@1MHz
IS
IT
IH
Part
Number
Marking
V min
V max
V max
mA max
A max
mA min
pF min
pF max
P0080SB
P0300SB
P0640SB
P0720SB
P0900SB
P1100SB
P1300SB
P1500SB
P1800SB
P2000SB
P2300SB
P2600SB
P3100SB
P3500SB
P4000SB
P4500SB
P5000SB
P008B
P03B
P06B
P07B
P09B
P11B
P13B
P15B
P18B
P20B
P23B
P26B
P31B
P35B
P40B
P45B
P50B
6
25
40
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
2.2
50
25
15
40
35
25
30
25
25
25
20
25
20
20
20
20
20
20
150
140
60
60
55
50
45
40
35
35
35
35
35
35
35
35
35
25
50
58
77
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
65
88
75
98
90
130
160
180
220
220
260
300
350
400
460
540
600
120
140
170
180
190
220
275
320
360
400
440
Notes:
- Absolute maximum ratings measured at TA= 25ºC (unless otherwise noted).
- Devices are bi-directional.
Surge Ratings
2/10μS1
2/10μS2
A min
250
8/20μS1
1.2/50μS2
A min
10/160μS1
10/160μS2
A min
10/560μS1
10/560μS2
A min
10/1000μS1
10/1000μS2
A min
5/310μS1
ITSM
50/60 Hz
di/dt
10/700μS2
A min
100
Series
A min
Amps/µs max
B
250
150
100
80
30
500
Notes:
- Peak pulse current rating (IPP) is repetitive and guaranteed for the life of the product.
- IPP ratings applicable over temperature range of -40ºC to +85ºC
1. Current waveform in µs
2. Voltage waveform in µs
- The device must initially be in thermal equilibrium with -40°C < TJ < +150°C
Thermal Considerations
Package
Symbol
Parameter
Value
Unit
TJ
Operating Junction Temperature Range
- 40 to + 150
- 40 to +150
90
°C
DO-214AA
TS
Storage Temperature Range
°C
RθJA
Thermal Resistance: Junction to Ambient
°C/W
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Revision October 18, 2013
2 / 5
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Thyristor Surge Suppressors (TSS)
P0080SB - P5000SB Series - DO-214AA(SMB)
@10/700μS, 4KV
Characteristic Curves
Figure 1 - V-I Characteristics
+I
Figure 2 - tr × td Pulse Waveform
tr=rise time to peak value
td=decay time to half value
IT
100
50
Peak
Value
IS
IH
Waveform=tr×td
IDRM
-V
+V
Half Value
VT VDRM
VS
50
tr
td
0
t – Time (μs)
-I
Figure 4 - Normalized DC Holding Current Versus Case
Temperature
Figure 3 - Normalized VS Change Versus Junction
Temperature
2.0
1.8
1.6
14
12
10
8
1.4
6
25℃
25℃
1.2
1.0
0.8
0.6
0.4
4
2
9
-4
-6
-8
-40 -20
0
20 40
60 80 100 120 140 160
-40 -20
0
20
40 60 80 100 120 140 160
Case Temperature (TC) - ℃
Junction Temperature (TJ) - ℃
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Revision October 18, 2013
3 / 5
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Thyristor Surge Suppressors (TSS)
P0080SB - P5000SB Series - DO-214AA(SMB)
@10/700μS, 4KV
Environmental Specifications
Physical Specifications
80% Rated VDRM (VAC Peak ) +125°C or +150°C,
Lead Material
Copper Alloy
High Temp Voltage
Blocking
Lead Material Copper Alloy High Temp Voltage
Blocking 504 or 1008 hrs. MIL-STD-750 (Method
1040) JEDEC, JESD22-A-101
Terminal Finish
100% Matte-Tin Plated
UL recognized epoxy meeting flammability
classification 94V-0
-65°C to +150°C, 15 min. dwell, 10 up to 100 cycles.
Body Material
Temp Cycling
MIL-STD-750
JESD22-A104
(Method
1051)
EIA/JEDEC,
Biased Temp &
Humidity
52 VDC (+85°C) 85%RH, 504 up to 1008 hrs.
EIA/
JEDEC, JESD22-A-101
+150°C 1008 hrs.
MIL-STD-750 (Method 1031)
High Temp Storage
Low Temp Storage
JEDEC, JESD22-A-101
-65°C, 1008 hrs.
0°C to +100°C,
5 min. dwell, 10 sec. transfer,
Thermal Shock
Thermal Shock 10 cycles.
MIL-STD-750 (Method
1056) JEDEC, JESD22-A-106
Autoclave (Pressure
Cooker Test)
+121°C, 100%RH, 2atm, 24 up to 168 hrs.
EIA/Cooker Test) JEDEC, JESD22-A-102
Resistance to Solder
Heat
+260°C, 30 secs.
MIL-STD-750 (Method 2031
Moisture Sensitivity
Level
85%RH, +85°C, 168 hrs., 3 reflow cycles Level
(+260°C Peak). JEDEC-J-STD-020, Level 1
Soldering Parameters
Reflow Condition
Lead–free assembly
-Temperature Min (Ts(min)
)
-Temperature Max (Ts(max)
-Time (min to max) (ts)
+150°C
TP
Critical Zone
TL to TP
Ramp-up
Pre Heat
)
+200°C
TL
60 -180 Seconds
TS(max)
Average ramp up rate ( Liquidus Temp TL)
to peak
Ramp-down
3°C/Second Max
TS(min)
TS(max) to TL - Ramp-up Rate
3°C/Second Max
+217°C
Preheat
- Temperature (TL) (Liquidus)
Reflow
25
Time to peak temperature
Time
- Time (min to max) (ts)
60 -150 Seconds
260 +0/-5°C
(t 25℃ to peak)
Peak Temperature (TP)
Time within 5°C of actual peak Temperature
(tp)
30 Seconds Max
Ramp-down Rate
6°C/Second Max
8 minutes Max
+260°C
Time 25°C to peak Temperature (TP)
Do not exceed
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Revision October 18, 2013
4 / 5
Thyristor Surge Suppressors (TSS)
P0080SB - P5000SB Series - DO-214AA(SMB)
@10/700μS, 4KV
Part Numbering
Part Marking
Part Marking Code
(Refer to Electrical Characteristics Table)
Date code
Dimensions DO-214AA
Inches
Millimeters
Dimensions
Min
Max
Min
3.30
5.10
1.95
4.05
0.76
1.90
0.05
1.95
0.15
Max
3.95
5.60
2.20
4.60
1.60
2.45
0.20
2.65
0.41
A
B
C
D
E
F
0.130
0.201
0.077
0.159
0.030
0.076
0.002
0.077
0.006
0.156
0.220
0.087
0.181
0.063
0.096
0.008
0.104
0.016
G
H
K
Inch
(millimeter)
Pad outline
Packaging
Component
Packaging
Option
Packaging
Specification
Part Number
Quantity
Package
Pxxx0SB
DO-214AA
2500
Tape & Reel -12mm/13″tape
EIA -481 - D
Tape and Reel Specifications
12.99
(330.0)
0.157
(4.0)
0.059
(1.5)
Diameter
0.472
(12.0)
0.512(13.0)
0.36
(9.2)
Arbor Hole Diameter
Cover tape
0.315
(8.0)
0.49
(12.4)
Dimensions are in inches
(and millimeters)
Direction of Feed
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Revision October 18, 2013
5 / 5
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