TPSMA6J13A [UNSEMI]
Surface Mount Transient Voltage Suppressors;
| 型号： | TPSMA6J13A |
| 厂家： | 
UN Semiconducctor INC |
| 描述： | Surface Mount Transient Voltage Suppressors |
| 文件： | 总4页 (文件大小：999K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount Transient Voltage Suppressors
TVS diodes can be used in a wide range of applications which like
consumer electronic products, automotive industries, munitions,
telecommunications, aerospace industries, and intelligent control
systems.
Working Voltage: 13 to 40 V
Peak Pulse Power: 600 W
Glass passivated chip
600W peak pulse power capability with a 10/1000 uA
waveform, repetitive rate (duty cycle):0.01 %
High reliability application and automotive grade AEC Q101
qualified
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-750, method
2026 guranteed
Low leakage
Polarity: Color band denotes cathode end except
Bipolar
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
Mounting position: Any
RoHS compliant
TVS devices are ideal for the protection of I/O interfaces, VCC bus
and other vulnerable circuits used in Telecom, Computer, Industrial
and Consumer electronic applications.
Parameter
Symbol
PPPM
Value
Units
Peak power dissipation with a 10/1000μs waveform(1)
600
W
Power Dissipation on Infinite Heat Sink at TL=75°C
PD
3.0
W
A
Peak pulse current with a 10/1000μs waveform(1)
I PP
See Next Table
T J , T STG
Operating junction and storage temperature range
-55 to +150
°C
V
Maximum instantaneous forward voltage at 25 A for unidirectional
3.5
60
VF
only
Peak forward surge current, 8.3 ms single half sine-wave
unidirectional only(2)
IFSM
A
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25℃per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
@ UN Semiconductor Co., Ltd. 2018
Specifications are subject to change without notice.
Revision July 18, 2018
1 / 4
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors
Maximum Maximum
Maximum
Reverse
Leakage IR
@VRWM
Breakdown
Reverse
Test
Current
IT
Clamping
Voltage
VC
Peak
Pulse
Current
IPP (A)
Part Number
Marking
Voltage VBR (V)
@IT
Stand-Off
Voltage
VRWM(V)
(mA)
Uni
Bi
Uni
Bi
MIN
MAX
@IPP (V)
(μA)
TPSMA6J13A TPSMA6J13CA LGA
TPSMA6J14A TPSMA6J14CA LKA
TPSMA6J15A TPSMA6J15CA LMA
TPSMA6J16A TPSMA6J16CA LPA
TPSMA6J17A TPSMA6J17CA LRA
BGA
BKA
BMA
BPA
BRA
13.0
14.0
15.0
16.0
17.0
14.40
15.60
16.70
17.80
18.90
15.90
17.20
18.50
19.70
20.90
1
1
1
1
1
21.5
23.2
24.4
26.0
27.6
27.9
25.9
24.6
23.1
21.7
1
1
1
1
1
TPSMA6J18A TPSMA6J18CA LTA
TPSMA6J19A TPSMA6J19CA LBA
TPSMA6J20A TPSMA6J20CA LVA
TPSMA6J22A TPSMA6J22CA LXA
TPSMA6J24A TPSMA6J24CA LZA
TPSMA6J26A TPSMA6J26CA MEA
TPSMA6J28A TPSMA6J28CA MGA
TPSMA6J30A TPSMA6J30CA MKA
TPSMA6J33A TPSMA6J33CA MMA
BTA
BBA
BVA
BXA
BZA
CEA
CGA
CKA
CMA
CPA
CRA
18.0
19.0
20.0
22.0
24.0
26.0
28.0
30.0
33.0
36.0
40.0
20.00
21.10
22.20
24.40
26.70
28.90
31.10
33.30
36.70
40.00
44.40
22.10
23.30
24.50
26.90
29.50
31.90
34.40
36.80
40.60
44.20
49.10
1
1
1
1
1
1
1
1
1
1
1
29.2
30.8
32.4
35.5.
38.9
42.1
45.4
48.4
53.3
58.1
64.5
20.5
19.5
108.5
16.9
15.4
14.3
13.2
12.4
11.3
10.3
9.30
1
1
1
1
1
1
1
1
1
1
1
TPSMA6J36A TPSMA6J36CA
TPSMA6J40A TPSMA6J40CA
MPA
MRA
Note:
(1)Add suffix ' CA ' after part number to specify Bi-directional devices
100
TJ = 25 °C
Tr=10μs
Pulse Width (td) is defined as the
Peak Value
(Ipp)
100
50
0
point where the peak current
decays to 50 % of Ipp
75
Half Value = Ipp
2
50
1
10/1000 μsec. Waveform
25
as defined by R.E.A.
td
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
Ambient Temperature ,TA (℃)
@ UN Semiconductor Co., Ltd. 2018
Specifications are subject to change without notice.
Revision July 18, 2018
2 / 4
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors
3.0
100
2.0
1.0
0.0
10
1
0.1
0
25
50
75
100
125
150
175
200
0.1
1
10
100
1000
10000
Lead Temperature , TL (℃)
Pulse Width ,td (μs)
80
60
40
20
0
10000
Bi-directional
@zero bias
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Uni-directional
@zero bias
1000
100
10
Uni-directional @VRWM
2000
22
Bi-directional @VRWM
TJ=25 °C
f=1.0MHz
1
1
10
Number of Cycles at 60 Hz
100
1
10
100
1000
Reverse Breakdown Voltage,VBR (V)
@ UN Semiconductor Co., Ltd. 2018
Specifications are subject to change without notice.
Revision July 18, 2018
3 / 4
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors
Reflow Condition
-Temperature Min (Ts(min)
Lead–free assembly
TP
Critical Zone
TL to TP
)
150°C
Ramp-up
TL
Pre Heat
-Temperature Max (Ts(max)
- Time (min to max) (ts)
)
200°C
TS(max)
60 -180 Seconds
Ramp-down
Average ramp up rate ( Liquidus Temp TL)
to peak
3°C/second max
TS(min)
TS(max) to TL - Ramp-up Rate
3°C/second max
217°C
Preheat
- Temperature (TL) (Liquidus)
Reflow
25
Time to peak temperature
- Time (min to max) (ts)
60 -150 Seconds
260 +0/-5°C
Time
(t 25℃ to peak)
Peak Temperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 -40 Seconds
Ramp-down Rate
6°C/second max
8 minutes Max
280°C
Time 25°C to peak Temperature (TP)
Do not exceed
Dimensions
Inches
Millimeters
DO-214AC (SMA)
Cathode Band
Dimensions
Min
0.049
0.162
0.099
0.077
0.030
-
Max
0.064
0.179
0.109
0.089
0.060
0.008
0.206
0.012
-
Min
1.230
4.10
2.510
1.960
0.750
-
Max
1.630
4.550
2.760
2.260
1.510
0.203
5.220
0.305
-
A
B
C
D
E
F
G
H
I
0.192
0.006
0.070
0.082
-
4.87
0.152
1.800
2.100
-
J
-
-
K
L
0.090
-
2.300
-
0.082
2.100
@ UN Semiconductor Co., Ltd. 2018
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Revision July 18, 2018
4 / 4
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