TPSMB10J22CA [UNSEMI]
Surface Mount Transient Voltage Suppressors;
| 型号： | TPSMB10J22CA |
| 厂家： | 
UN Semiconducctor INC |
| 描述： | Surface Mount Transient Voltage Suppressors |
| 文件： | 总4页 (文件大小：870K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount Transient Voltage Suppressors
TVS diodes can be used in a wide range of applications which like
consumer electronic products, automotive industries, munitions,
telecommunications, aerospace industries, and intelligent control
systems.
Working Voltage: 15 to 40 V
Peak Pulse Power: 1000 W
Glass passivated chip
1000W peak pulse power capability with a 10/1000 uA
waveform, repetitive rate (duty cycle):0.01 %
High reliability application and automotive grade AEC Q101
qualified
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-750, method
2026 guranteed
Low leakage
Polarity: Color band denotes cathode end except
Bipolar
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
Mounting position: Any
RoHS compliant
TVS devices are ideal for the protection of I/O interfaces, VCC bus
and other vulnerable circuits used in Telecom, Computer, Industrial
and Consumer electronic applications.
Parameter
Symbol
PPPM
Value
Units
Peak power dissipation with a 10/1000μs waveform(1)
1000
W
Power Dissipation on Infinite Heat Sink at TL=75°C
PD
5.0
W
A
Peak pulse current with a 10/1000μs waveform(1)
I PP
See Next Table
T J , T STG
Operating junction and storage temperature range
-55 to +150
3.5
°C
V
Maximum instantaneous forward voltage at 25 A for unidirectional
VF
only
Peak forward surge current, 8.3 ms single half sine-wave
unidirectional only(2)
IFSM
100
A
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25℃per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
@ UN Semiconductor Co., Ltd. 2018
Specifications are subject to change without notice.
Revision July 18, 2018
1 / 4
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors
Maximum Maximum
Maximum
Reverse
Leakage IR
@VRWM
Breakdown
Reverse
Test
Current
IT
Clamping
Voltage
VC
Peak
Pulse
Current
IPP (A)
Part Number
Marking
Uni Bi
Voltage VBR (V)
@IT
Stand-Off
Voltage
VRWM(V)
(mA)
Uni
Bi
MIN
MAX
@IPP (V)
(μA)
TPSMB10J15A TPSMB10J15CA PALM DABM
TPSMB10J16A TPSMB10J16CA PALP DABP
TPSMB10J17A TPSMB10J17CA PALR DABR
TPSMB10J18A TPSMB10J18CA PALT DABT
TPSMB10J19A TPSMB10J19CA PALB DABB
TPSMB10J20A TPSMB10J20CA PALV DABV
TPSMB10J22A TPSMB10J22CA PALX DABX
TPSMB10J24A TPSMB10J24CA PALZ DABZ
TPSMB10J26A TPSMB10J26CA PAME DACE
TPSMB10J28A TPSMB10J28CA PAMG DACG
TPSMB10J30A TPSMB10J30CA PAMK DACK
TPSMB10J33A TPSMB10J33CA PAMM DACM
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
26.0
28.0
30.0
33.0
36.0
40.0
16.70
17.80
18.90
20.00
21.10
22.20
24.40
26.70
28.90
31.10
33.30
36.70
40.00
44.40
18.50
19.70
20.90
22.10
23.30
24.50
26.90
29.50
31.90
34.40
36.80
40.60
44.20
49.10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
24.4
26.0
27.6
29.2
30.8
32.4
35.5.
38.9
42.1
45.4
48.4
53.3
58.1
64.5
40.98
38.46
36.23
34.25
32.49
30.86
28.17
25.71
23.75
22.03
20.66
18.76
17.21
15.50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
TPSMB10J36A TPSMB10J36CA
PAMP DACP
PAMR DACR
TPSMB10J40A
TPSMB10J40CA
Note:
(1) Add suffix ' CA ' after part number to specify Bi-directional devices
(2) Suffix 'A ' denotes 5% tolerance device.
100
TJ = 25 °C
Tr=10μs
Pulse Width (td) is defined as the
Peak Value
(Ipp)
100
50
0
dpoecinatyws thoer5e0t%heopfeIapkpcurrent
Half Value = Ipp
75
2
50
1
10/1000 μsec. Waveform
as definedby R.E.A.
25
td
0
0
25
50
75
100
125
150
175
200
0
1
2
3
4
Time , (ms)
Ambient Temperature ,TA (℃)
@ UN Semiconductor Co., Ltd. 2018
Specifications are subject to change without notice.
Revision July 18, 2018
2 / 4
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors
5.0
100
4.0
3.0
2.0
1.0
0.0
10
1
0.1
0
25
50
75
100
125
150
175
200
0.1
1
10
100
1000
Lead Temperature , TL (℃)
Pulse Width ,td (μs)
10000
100
Bi-directional
@zero bias
T = TJ max.
100J
8.3 ms Single Half Sine-Wave
Uni-directional
@zero bias
80
60
40
20
0
1000
100
10
Uni-directional
@VRWM
TJ=25 °C
Bi-directional @VRWM
f=1.0MHz
1
1
10
Number of Cycles at 60 Hz
100
10
100
Reverse Breakdown Voltage,VBR (V)
@ UN Semiconductor Co., Ltd. 2018
Specifications are subject to change without notice.
Revision July 18, 2018
3 / 4
Please refer to www.unsemi.com.tw for current information.
Surface Mount Transient Voltage Suppressors
Reflow Condition
-Temperature Min (Ts(min)
Lead–free assembly
TP
Critical Zone
TL to TP
)
150°C
Ramp-up
TL
Pre Heat
-Temperature Max (Ts(max)
- Time (min to max) (ts)
)
200°C
TS(max)
60 -180 Seconds
Ramp-down
Average ramp up rate ( Liquidus Temp TL)
to peak
3°C/second max
TS(min)
TS(max) to TL - Ramp-up Rate
3°C/second max
217°C
Preheat
- Temperature (TL) (Liquidus)
Reflow
25
Time to peak temperature
- Time (min to max) (ts)
60 -150 Seconds
260 +0/-5°C
Time
(t 25℃ to peak)
Peak Temperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 -40 Seconds
Ramp-down Rate
6°C/second max
8 minutes Max
280°C
Time 25°C to peak Temperature (TP)
Do not exceed
Dimensions
Inches
Millimeters
DO-214AA (SMB)
Cathode Band
Dimensions
Min
0.077
0.171
0.130
0.084
0.030
-
Max
0.087
0.191
0.155
0.096
0.060
0.008
0.216
0.012
-
Min
1.960
4.350
3.300
2.130
0.750
-
Max
2.200
4.850
3.940
2.440
1.520
0.203
5.500
0.305
-
A
B
C
D
E
F
G
H
I
0.201
0.006
0.089
0.085
-
5.100
0.152
2.260
2.160
-
J
-
-
K
L
0.107
-
2.740
-
0.085
2.160
@ UN Semiconductor Co., Ltd. 2018
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Revision July 18, 2018
4 / 4
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