UN1210 [UNSEMI]
Surface Mount 2-Electrode Gas Discharge Tube;
| 型号： | UN1210 |
| 厂家： | 
UN Semiconducctor INC |
| 描述： | Surface Mount 2-Electrode Gas Discharge Tube 开关 晶体管 |
| 文件： | 总4页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount 2-Electrode Gas Discharge Tube (GDT)
UN1210 Series
Description
Gas discharge Tubes (GDT) are classical components for
protecting the installations of the telecommunications. It is
essential that IT and telecommunications systems -with their
high-grade but sensitive electronic circuits - be protected by
arresters.
The 1210 series GDT offers high surge ratings in a miniature
package. It’s designed for surface mounting on PCB with small size
3.2x2.5x2.5mm. Low insertion loss is perfectly suited to broadband
equipment applications. The capacitance does not vary with
voltage, and will not cause operational problems with ADSL2+,
Schematic Symbol
where capacitance variation across Tip and Ring is undesirable.
These devices are extremely robust and are able to divert a 500A
pulse in a miniature package 1210 without destruction.
Agency Approvals
Product Characteristics
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Non-Radioactive
Materials
Dull Tin-plated
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RoHS compliant
Product Marking Without
Ultra low capacitance (<1.0pF)
UL recognized
Storage and
Operational
Temperature
-40 to +90°C
Excellent response to fast rising transients
1KA surge capability tested with 8/20μs
pulse as defined by IEC 61000-4-5
Square Outline
Weight
~80mg
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Applications
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Communication equipment
CATV equipment
Test equipment
Data lines
Power supplies
Telecom SLIC protection
Broadband equipment
ADSL equipment, including ADSL2+
XDSL equipment
Satellite and CATV equipment
General telecom equipment
ESD protection
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Revision October 18, 2013
1 / 4
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount 2-Electrode Gas Discharge Tube (GDT)
UN1210 Series
Device Dimensions
(Unit: mm)
Recommended pad outline
Electrical Characteristics
Nominal
DC
Spark-over
Voltage
Impulse
Discharge
Voltage
Maximum Impulse
Spark-over Voltage
Maximum
Capacitance
Arc
Voltage
Impulse
Discharge
Current
Minimum
Insulation
Resistance
Part Number
@8/20μs
±5 times
@100V/S
@100V/μs
@1KV/μs
@1MHz
@1A
@10/700μs
1 GΩ
(at 50V DC)
UN1210-150BSMD
UN1210-200BSMD
UN1210-230BSMD
UN1210-300BSMD
UN1210-350BSMD
UN1210-400BSMD
UN1210-420BSMD
150V±20%
200V±20%
230V±20%
300V±20%
350V±20%
400V±20%
420V±20%
470V±20%
500V
500V
600V
700V
800V
800V
800V
900V
600V
700V
700V
800V
900V
950V
950V
1000V
1.0pF
1.0pF
1.0pF
1.0pF
1.0pF
1.0pF
1.0pF
1.0pF
~15V
~15V
~15V
~15V
~15V
~15V
~15V
~15V
1 KA
1 KA
1 KA
1 KA
1 KA
1 KA
1 KA
1 KA
8KV
8KV
8KV
8KV
8KV
8KV
8KV
8KV
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
1 GΩ
(at 100V DC)
UN1210-470BSMD
Notes:
1). Terms in accordance with ITU-T K.12 and GB/T 9043-2008
2). At delivery AQL 0.65 level Ⅱ, DIN ISO 2859
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Revision October 18, 2013
2 / 4
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Surface Mount 2-Electrode Gas Discharge Tube (GDT)
UN1210 Series
Electrical Rating
Item
Test Condition / Description
Requirement
DC Spark-over Voltage
The voltage is measured with a slowly rate of rise dv / dt=100V/s
Impulse Spark-over
Voltage
The maximum impulse spark-over voltage is measured with a rise time of
dv / dt=100V//μs or 1KV/μs
The resistance of gas tube shall be measured each terminal each other terminal,
please see above spec.
Insulation Resistance
Capacitance
The capacitance of gas tube shall be measured each terminal to each other
terminal.
Test frequency :1MHz
The maximum current applying a waveform of 8/20μs that can be applied across
the terminals of the gas tube. One hour after the test is completed, re-testing of the
DC spark-over voltage does not exceed ±30% of the nominal DC spark-over
voltage. Dwell time between pulses is 3 minutes.
To meet
the specified
value
Nominal Impulse
Discharge Current
Recommended soldering profile
Reflow Condition
Pb - Free assembly
150°C
-Temperature Min (Ts(min)
)
-Temperature Max (Ts(max)
- Time (min to max) (ts)
TP
Pre Heat
)
200°C
Critical Zone
TL to TP
Ramp-up
60 -180 Seconds
TL
TS(max)
Average ramp up rate ( Liquidus Temp TL)
to peak
3°C/second max
Ramp-down
TS(max) to TL - Ramp-up Rate
5°C/second max
217°C
TS(min)
- Temperature (TL) (Liquidus)
Reflow
Preheat
- Time (min to max) (ts)
60 -150 Seconds
260 +0/-5°C
Peak Temperature (TP)
25
Time to peak temperature
Time
(t 25℃ to peak)
Time within 5°C of actual peak
Temperature (tp)
10 - 30 Seconds
Ramp-down Rate
6°C/second max
8 minutes Max
260°C
Time 25°C to peak Temperature (TP)
Do not exceed
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Revision October 18, 2013
3 / 4
Surface Mount 2-Electrode Gas Discharge Tube (GDT)
UN1210 Series
Part Numbering
U N 1 2 1 0 – X X X B S M D
SMD, Surface Mount
8/20μs Level
B, 1KA
Nominal DC Spark-over Voltage
150 = 150V
200 = 200V
350 = 350V
400 = 400V
Series
Tape and Reel Dimensions
Unit: mm
Packaging
Part Number
Description
Quantity
UN1210-XXXBSMD
12mm Tape & 7″ Reel
1000
Cautions and warnings
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Gas discharge tubes (GDT) must not be operated directly in power supply networks.
Gas discharge tubes (GDT) may become hot in case of longer periods of current stress (danger of burning).
Gas discharge tubes (GDT) may be used only within their specified values. In the event of overload, the head contacts may
fail or the component may be destroyed.
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Damaged Gas discharge tubes (GDT) must not be re-used.
UN Semiconductor Co., Ltd.
www.unsemi.com.tw
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
Revision October 18, 2013
4 / 4
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