UNS3220-621K [UNSEMI]

Radial Lead Varistor (MOV);
UNS3220-621K
型号: UNS3220-621K
厂家: UN Semiconducctor INC    UN Semiconducctor INC
描述:

Radial Lead Varistor (MOV)

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中文:  中文翻译
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Radial Lead Varistor (MOV)  
The UNS3220- series radial leaded varistors provides an ideal  
circuit protection solution for lower DC voltage applications by  
offering higher surge ratings than ever before available in such  
small discs.  
The maximum peak surge current rating can reach up to 1KA  
(8/20μs pulse) to protect against high peak surges, including  
indirect lightning strike interference, system switching  
transients and abnormal fast transients from the power  
source.  
Wide operating voltages ranging from 11Vrms to  
460Vrms  
Operating Temperature: -55~ +125℃  
Storage Temperature: -55~ +150℃  
Electric strength: 2.5kVRMS  
Fast response time of less than 25ns, instantly clamping  
the transient over voltage.  
Insulation Resistance: > 100MΩ  
High surge current handling capability.  
High energy absorption capability.  
Low clamping voltages, providing better surge protection  
White package design without shadow in LED lighting  
application  
SMD mountable disk varistors, suitable for lead-free  
reflow / wave soldering  
Power supplies for telecommunication systems  
Surge protection in industrial electronics.  
Protection for LED circuits  
Relay and electromagnetic valve surge absorption.  
UN  
(1)  
-
S
-
3220  
-
471  
-
K
(2)  
(3)  
(4)  
(6)  
(1) UN: Logo  
(2) Type : S: SMD  
(3) Size(mm) : 8.0*6.3mm  
(3) Varistor Voltage V1mA : 47*101 = 470V  
(4) Tolerance : K±10%, L±15%, M±20%  
@ UN Semiconductor Co., Ltd. 2018  
Specifications are subject to change without notice.  
Revision April 24, 2018  
1 / 4  
Please refer to www.unsemi.com.tw for current information.  
Radial Lead Varistor (MOV)  
Maximum  
Allowable  
Voltage  
Withstanding  
Surge Current  
8/20μS  
Max  
Clamping  
Voltage  
Maximum  
Energy  
(2ms)  
Rated  
Power  
Varistor  
Voltage  
Part Number  
Standard  
I(A)  
Standard  
1 Time  
VAC  
(V)  
VDC  
(V)  
V1mA  
(V)  
VC  
(V)  
IP  
(A)  
1 time  
(J)  
(W)  
UNS3220-180K  
UNS3220-220K  
UNS3220-270K  
UNS3220-330K  
UNS3220-390K  
UNS3220-470K  
UNS3220-560K  
UNS3220-680K  
UNS3220-820K  
UNS3220-101K  
UNS3220-121K  
UNS3220-151K  
UNS3220-181K  
UNS3220-201K  
UNS3220-221K  
UNS3220-241K  
UNS3220-271K  
UNS3220-331K  
UNS3220-361K  
UNS3220-391K  
UNS3220-431K  
UNS3220-471K  
UNS3220-511K  
UNS3220-561K  
UNS3220-621K  
UNS3220-681K  
UNS3220-751K  
11  
14  
14  
18  
18(15-21)  
22(20-24)  
250  
250  
36  
43  
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
0.4  
0.5  
0.02  
0.02  
0.02  
0.02  
0.02  
0.02  
0.02  
0.02  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
0.20  
17  
22  
27(24-30)  
250  
53  
0.7  
20  
26  
33(30-36)  
250  
65  
0.8  
25  
31  
39(35-43)  
250  
77  
0.9  
30  
38  
47(42-52)  
250  
93  
1.1  
35  
45  
56(50-62)  
250  
110  
135  
135  
165  
200  
250  
300  
340  
360  
395  
455  
545  
595  
650  
710  
775  
845  
930  
1025  
1120  
1240  
1.3  
40  
56  
68(61-75)  
250  
1.6  
50  
65  
82(74-90)  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
2.5  
60  
85  
100(90-110)  
120(108-132)  
150(135-165)  
180(162-198)  
200(185-225)  
220(198-242)  
240(216-264)  
270(243-297)  
330(297-363)  
360(324-396)  
390(351-429)  
430(387-473)  
470(423-517)  
510(459-561)  
560(504-616)  
620(558-682)  
680(612-748)  
750(675-825)  
3.0  
75  
100  
125  
150  
170  
180  
200  
225  
275  
300  
320  
350  
385  
415  
460  
505  
560  
615  
3.5  
95  
4.5  
115  
130  
140  
150  
175  
210  
230  
250  
275  
300  
320  
350  
385  
420  
460  
4.5  
6.0  
6.5  
7.5  
8.0  
9.5  
11.0  
12.0  
13.5  
15.0  
16.0  
16.5  
17.0  
18.0  
18.5  
@ UN Semiconductor Co., Ltd. 2018  
Specifications are subject to change without notice.  
Revision April 24, 2018  
2 / 4  
Please refer to www.unsemi.com.tw for current information.  
Radial Lead Varistor (MOV)  
Reflow Condition  
-Temperature Min (Ts(min)  
-Temperature Max (Ts(max)  
- Time (min to max) (ts)  
Lead–free assembly  
TP  
Critical Zone  
TL to TP  
Ramp-up  
)
150°C  
TL  
Pre Heat  
)
200°C  
TS(max)  
60 -180 Seconds  
Ramp-down  
Average ramp up rate ( Liquidus Temp TL)  
to peak  
3°C/second max  
TS(min)  
TS(max) to TL - Ramp-up Rate  
3°C/second max  
217°C  
Preheat  
- Temperature (TL) (Liquidus)  
Reflow  
25  
Time to peak temperature  
Time  
(t 25to peak)  
- Time (min to max) (ts)  
60 -150 Seconds  
260 +0/-5°C  
Peak Temperature (TP)  
Time within 5°C of actual peak  
Temperature (tp)  
20 -40 Seconds  
Ramp-down Rate  
6°C/second max  
8 minutes Max  
280°C  
Time 25°C to peak Temperature (TP)  
Do not exceed  
Notes: All temperature refer to topside of the package, measured on the package body surface  
Maximum number of reflow cycles: 3  
l
Dimension  
Millimeters  
inches  
Ref.  
Min. Typ. Max. Min. Typ. Max.  
I
w
h
d
e
f
7.7  
6.0  
3.1  
1.2  
0
8.0  
6.6  
3.8  
1.8  
0.3  
3.3  
0.303  
0.236  
0.122  
0.047  
0
0.327  
0.260  
0.150  
0.071  
0.012  
0.130  
d
w
f
3.7  
0.106  
RECOMMENDED SOLDER PAD LAYOUT  
Dimension  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
C
inches  
Ref.  
A
B
C
3.5  
2.8  
4.5  
0.138  
0.110  
0.177  
B
@ UN Semiconductor Co., Ltd. 2018  
Specifications are subject to change without notice.  
Revision April 24, 2018  
3 / 4  
Please refer to www.unsemi.com.tw for current information.  
Radial Lead Varistor (MOV)  
P
0
T
P
D
2
0
T
A
1
0
T
1
P
Direction of unreeling  
Tape end (trailer)  
1
T
2
40 min.  
empty cavities  
Leader  
25 min.  
empty cavities  
300 mm  
cover tape  
Dimension  
Definition  
Symbol  
Millimeters  
Typ.  
inches  
Min.  
Max.  
Min.  
0.268  
Typ.  
Max.  
Compartment width  
Compartment length  
A0  
B0  
D0  
P0  
6.8  
8.5  
1.5  
3.9  
7.0  
8.7  
-
7.2  
8.9  
1.6  
4.1  
0.276  
0.343  
-
0.283  
0.350  
0.063  
0.161  
0.335  
0.059  
0.154  
Sprocket hole diameter  
Sprocket hole pitch  
4.0  
0.157  
Distance center hole to center  
compartment  
P2  
P1  
1.95  
11.9  
2.00  
12.0  
2.05  
12.1  
0.077  
0.469  
0.079  
0.472  
0.081  
0.476  
Pitch of the component  
compartments  
Tape width  
W
E
15.7  
1.65  
16.0  
1.75  
16.3  
1.85  
0.618  
0.065  
0.630  
0.069  
0.642  
0.073  
Distance edge to center of hole  
Distance center hole to center  
compartment  
F
7.45  
7.50  
7.55  
0.293  
0.295  
0.297  
Distance compartment to edge  
Overall thickness  
G
T2  
T
0.75  
-
-
-
-
-
-
-
0.030  
-
-
-
-
-
-
-
-
-
5.5  
-
0.217  
0.012  
12.99  
0.705  
0.882  
Thickness tape  
0.3  
-
Reel diameter  
A
328  
16.4  
-
330  
17.9  
22.4  
12.91  
0.646  
-
Reel width (inside)  
Reel width (outside)  
W1  
W2  
1) Quantity of taping packing(pcs): 1000  
@ UN Semiconductor Co., Ltd. 2018  
Specifications are subject to change without notice.  
Revision April 24, 2018  
4 / 4  
Please refer to www.unsemi.com.tw for current information.  

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