MIR-3301-P [UOT]
SUBMINIATURE PHOTOINTERRUPTER; 微型光斩波器
| 型号： | MIR-3301-P |
| 厂家： | 
UNITY OPTO TECHNOLOGY |
| 描述： | SUBMINIATURE PHOTOINTERRUPTER |
| 文件： | 总3页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHOTOINTERRUPTER
MIR-3301-P
Description
Package Dimensions
The MIR-3301-P consists of a Gallium Arsenide in-
frared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing. It is a refl-
ective subminiature photointerrupter.
Features
ꢀ Compact and thin
ꢀ MIR-3301 : long lead type
ꢀ Optimum detecting diatance : 0.8 - 1.0 mm
ꢀ Wavelength : 940nm
ꢀ Visible light cut-off type
ꢀ Flat lead type
TOP VIEW
Emitter
Anode
D
A
C
B
Collector
Cathode
NOTE :
(1).Tolerance:±0.2mm
(2). ( ) Reference dimensions
Absolute Maximum Ratings
@ TA=25oC
Unit
mA
Parameter
Continuous Forward Current
INPUT Reverse Voltage
Power Dissipation
Symbol
IF
Minimum Rating Maximum Rating
50
VR
5
V
Pad
75
mW
V
V(BR)CEO
V(BR)ECO
PC
Collector-emitter breakdown voltage
30
5
Emitter-Collector breakdown voltage
Collector power dissipation
OUTPUT
V
75
100
mW
mW
PTOT
Topr
Total power dissipation
o
-25 C to + 85oC
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260 oC
-40 C to + 100oC
o
Tstg
Unity Opto Technology Co., Ltd.
12/12/2001
MIR-3301-P
Optical-Electrical Characteristics
Parameter
Symbol
VF
Test Conditions
Min .
Typ .
Max .
1.4
Unit .
V
IF=20mA
Input
Forward Voltage
-
-
1.2
-
IR
VR=5V
Reverse Current
10
µA
nA
Iceo
B
Output
Collector Dark Current
-
-
100
75
Vce=10V
38
56
80
112
-
-
C
-
108
151
216
100
100
0.1
*1Collector Current
IF=4mA,Vce=5V
Ic
D
µA
Transfer Cha-
racteristics
-
E
tr
-
Ic=100µA,Vce=2V
RL=1K,d=1mm
Response Time (RISE)
Response Time (FALL)
*2Leak Current
20
20
-
µS
µS
µA
tf
-
ILEAK
IF=4mA,Vce=5V
-
*1 THE CONDITION AND ARRANGEMENT OF THE REFLECTIVE OBJECT ARE SHOWN AS FOLLOWING .
*2 WITHOUT REFLECTIVE OBJECT.
TEST CONDITION AND ARRANGEMENT FOR COLLECTOR CURRENT
Al refletive Surface
2 mm-thick glass
Device
Typical Optical-Electrical Characteristic Curves
60
50
40
30
20
10
0
120
100
80
60
40
20
0
PTOT
Pad , PC
-25
0
25
50
75
100
-25
0
25
50
75
100
Ambient Temperature TA (oC)
Ambient Temperature TA ( oC )
Fig.2 Power Dissipation vs.
Ambient Temperature
Fig.1 forward Current VS
Ambient Temperature
.
50
40
30
20
10
0
600
500
400
300
200
100
0
Vce=5V
Ta=25oC
0.0
0.5
1.0
1.5
0
5
10
15
20
Forward Voltage VF (V)
Fig.3 Forward Current VS
Forward Voltage
Forward Current IF (mA)
Fig.4 Collector Current vs.
Forward Current
Unity Opto Technology Co., Ltd.
02/04/2002
MIR-3301-P
Typical Optical-Electrical Characteristic Curves
350
120
100
80
60
40
20
0
Ta=25oC
300
IF=10mA
250
200
150
100
50
4mA
1mA
10
0
0
2
4
6
8
12
-25
0
25
50
75
100
Ambient Temperature TA (oC)
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
Fig.6 Relative Collector Current VS.
10-6
100
10
1
VCE=10V
tr
10-7
10-8
td
tr
VCE=2V
ts
10-9
IC=100µA
Ta=25oC
10-10
0.1
0.01
0
25
50
75
100
0.1
1
10
Ambient Temperature TA (oC)
Fig.7 Collector Dark Current vs.
Ambient Temperature
Load Resistance Rt (KΩ)
Fig.8 Response Time vs.
Load Resistance
100
80
60
40
20
0
120
100
80
60
40
20
0
Ta=25oC
IF=4mA
VCE=5V
TA=25oC
700
800
900 1000 1100 1200
0
1
2
3
4
5
6
7
8
9
10
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Distance (mm)
Fig.10 Relative Collector Current vs. Distance
between MIR-3301 and Card
Test Circuit for Response Time
Vcc
RL
Input
Input
Output
Output
10%
90%
td
ts
tr
tf
Unity Opto Technology Co., Ltd.
02/04/2002
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