12N50L-TQ2-T [UTC]
12A, 500V N-CHANNEL POWER MOSFET; 12A ， 500V N沟道功率MOSFET
| 型号： | 12N50L-TQ2-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 12A, 500V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
12N50
Preliminary
Power MOSFET
TO-220
12A, 500V N-CHANNEL
POWER MOSFET
1
1
DESCRIPTION
The UTC 12N50 is an N-channel mode power MOSFET using
TO-220F1
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 12N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
1
TO-263
FEATURES
* RDS(ON)=0.54Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
12N50L-TA3-T
12N50L-TF1-T
12N50L-TQ2-T
12N50L-TQ2-R
12N50G-TA3-T
12N50G-TF1-T
12N50G-TQ2-T
12N50G-TQ2-R
TO-220
TO-220F1
TO-263
G
G
G
G
D
D
D
D
Tube
Tube
Tube
TO-263
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
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QW-R502-528.c
12N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous (TC=25°C)
Pulsed (Note 3)
12 (Note 2)
48 (Note 2)
12
A
Drain Current
IDM
A
Avalanche Current (Note 3)
Single Pulsed (Note 4)
Repetitive (Note 5)
Peak Diode Recovery dv/dt (Note 5)
IAR
A
EAS
684
mJ
mJ
V/ns
Avalanche Energy
EAR
19.5
dv/dt
4.5
TO-220/ TO-263
TO-220F1
192
Power Dissipation
(TC=25°C)
W
42
PD
TO-220/ TO-263
TO-220F1
1.53
Derate above 25°C
W/°C
0.33
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55~+150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =9.5mH, IAS = 12A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
5. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-220/ TO-263
TO-220F1
0.65
Junction to Case
θJC
°C/W
3.0
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12N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
GS=+30V, VDS=0V
500
2.0
V
10
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=6A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.42 0.54
ꢀ
CISS
COSS
CRSS
1450 1930 pF
198 265 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
14.5 22
pF
QG
QGS
QGD
tD(ON)
tR
30
8
39
nC
nC
nC
ns
VGS=10V, VDS=400V, ID=12A
(Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
12
28
65
54 120 ns
75 160 ns
47 105 ns
VDD=250V, ID=12A, RG=25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
12
48
A
A
IS=12A, VGS=0V
1.5
V
154
ns
µC
IS=12A, VGS=0V, dIF/dt=100A/µs
(Note 1)
QRR
0.45
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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12N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kꢀ
300nF
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
VDS
1
2
BVDSS
BVDSS-VDD
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
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12N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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12N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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