19N10 概述
100V N-Channel MOSFET 100V N沟道MOSFET
19N10 数据手册
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PDF下载UNISONIC TECHNOLOGIES CO., LTD
19N10
Preliminary
Power MOSFET
100V N-Channel MOSFET
DESCRIPTION
The UTC 100V N-Channel enhancement mode power field
effect transistors (MOSFET) are produced by UTC’s planar stripe,
DMOS technology which has been tailored especially in the
avalanche and commutation mode to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse. They are suited for low voltage
applications such as audio amplifier, high efficiency switching
DC/DC converters, and DC motor control.
FEATURES
* RDS(ON) = 0.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 19nC )
* Low reverse transfer Capacitance ( CRSS = typical 32pF )
* Fast switching capability
Lead-free:
Halogen-free: 19N10G
19N10L
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-251
Packing
Tube
Normal
Lead Free
Halogen Free
1
2
3
19N10-TM3-T
19N10L-TM3-T
19N10G-TM3-T
G
D
S
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Copyright © 2008 Unisonic Technologies Co., Ltd
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19N10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
100
± 25
15.6
62.4
15.6
220
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
A
IDM
A
IAR
A
EAS
mJ
mJ
V/ns
W
EAR
5.0
dv/dt
6.0
50
PD
Derate above 25°C
0.4
W/°C
℃
Junction Temperature
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=1.35mH, IAS=15.6A, VDD=25V, RG=25 ꢀ, Starting TJ=25°C
4. ISD≤19A, di/dt ≤ 300A/µs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
110
UNIT
℃/W
℃/W
Junction-to-Ambient
Junction-to-Case
θJC
2.5
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
VGS=0V, ID=250µA
ID=250µA,
Referenced to 25°C
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
∆BVDSS
/ ∆TJ
100
V
V/°C
0.1
VDS=100V, VGS=0V
VGS=25V, VDS=0V
VGS=-25V, VDS=0V
Drain-Source Leakage Current
IDSS
1
µA
nA
Forward
Reverse
100
-100
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
V
V
V
DS=VGS, ID=250µA
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
2.0
4.0
0.1
V
ꢀ
S
GS=10V, ID=7.8A
0.078
11
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
DS=40V, ID=7.8A (Note 1)
CISS
COSS
CRSS
600
165
32
780
215
40
pF
pF
pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
19
3.9
9.0
7.5
150
20
25
nC
nC
nC
ns
ns
ns
ns
VDS=80V, ID=19A, VGS=10V
Gate Source Charge
(Note 1, 2)
Gate Drain Charge
Turn-ON Delay Time
25
310
50
Turn-ON Rise Time
VDD=50V, ID=19A, RG=25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(OFF)
tF
65
140
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19N10
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER SYMBOL
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNIT
Diode Forward Voltage
VSD
IS
VGS=0V, IS=15.6A
1.5
V
A
Maximum Body-Diode Continuous Current
Maximum Pulsed Drain-Source Diode
Forward Current
15.6
ISM
62.4
A
Body Diode Reverse Recovery Time
tRR
VGS= 0V, IS=19A,
78
ns
dIF/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
QRR
200
nC
Note: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2%
Note: 2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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19N10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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19N10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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19N10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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