2SA1020L-O-AB3-B 概述
SILICON PNP EPITAXIAL TRANSISTOR PNP硅外延晶体管
2SA1020L-O-AB3-B 数据手册
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2SA1020
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
1
DESCRIPTION
ꢀ
SOT-89
The UTC 2SA1020 is designed for power amplifier and power
switching applications.
ꢀ
FEATURES
1
*Low collector saturation voltage:
CE(SAT)=-0.5V(max.) (IC=-1A)
TO-92NL
V
*High speed switching time: tSTG=1.0µs(Typ.)
*Complement to UTC 2SC2655
*Pb-free plating product number:2SA1020L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
2SA1020L-x-AB3-R
2SA1020L-x-T9N-B
2SA1020L-x-T9N-K
1
B
E
E
2
C
C
C
3
E
B
B
2SA1020-x-AB3-R
2SA1020-x-T9N-B
2SA1020-x-T9N-K
SOT-89
TO-92NL
TO-92NL
Tape Reel
Tape Box
Bulk
2SA1020L-x-AB3-R
(1)Packing Type
(2)Package Type
(3)Rank
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AB3: SOT-89, T9N: TO-92NL
(3) x: refer to Classification of h
FE1
(4)Lead Plating
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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2SA1020
PNP SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
Ic
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
-50
V
-5
V
-2
A
TO-92NL
SOT-89
900
mW
mW
°C
°C
Collector Power Dissipation
PC
500
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
Ic=-10mA, IB=0
MIN TYP MAX UNIT
Collector to Emitter Breakdown Voltage
Collector Cut-off Current
-50
V
VCB=-50V, IE=0
VEB=-5V, IC=0
-1.0
-1.0
240
µA
µA
Emitter Cut-off Current
IEBO
hFE1
hFE2
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-1.5A
70
40
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
VCE(SAT) Ic=-1A, IB=-0.05A
-0.5
-1.2
V
V
VBE(SAT)
fT
Ic=-1A, IB=-0.05A
VCE=-2V, Ic=-0.5A
VCB=-10V, IE=0, f=1MHz
100
40
MHz
pF
µs
µs
µs
Collector Output Capacitance
Turn-on Time
Cob
tON
0.1
1.0
0.1
Storage Time
tSTG
Switching Time
Fall Time
tF
ꢀ
CLASSIFICATION OF hFE1
RANK
O
Y
RANGE
70 - 140
120 - 240
UNISONIC TECHNOLOGIES CO., LTD
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2SA1020
PNP SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
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2SA1020
PNP SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
TO-92NL
SOT-89
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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