2SC3838L-X-AE3-R [UTC]

HIGH-FREQUENCY AMPLIFIER TRANSISTOR; 高频晶体管放大器
2SC3838L-X-AE3-R
型号: 2SC3838L-X-AE3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

HIGH-FREQUENCY AMPLIFIER TRANSISTOR
高频晶体管放大器

晶体 放大器 晶体管
文件: 总2页 (文件大小:89K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SC3838  
NPN SILICON TRANSISTOR  
HIGH-FREQUENCY AMPLIFIER  
TRANSISTOR  
3
FEATURES  
1
2
*High transition frequency.  
*Small rbb’·Cc and high gain.  
*Small NF.  
SOT-23  
3
1
2
SOT-323  
*Pb-free plating product number: 2SC3838L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
2SC3838L-x-AE3-R  
2SC3838L-x-AL3-R  
1
E
E
2
B
B
3
C
C
2SC3838-x-AE3-R  
2SC3838-x-AL3-R  
SOT-23  
Tape Reel  
Tape Reel  
SOT-323  
2SC3838L-x-AE3-R  
(1)Packing Type  
(2)Package Type  
(3)Rank  
(1) R: Tape Reel  
(2) AE3: SOT-23, AL3: SOT-323  
(3) x: refer to Classification of h  
FE  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
MARKING  
AD  
Lead Plating  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 2  
QW-R220-018,B  
2SC3838  
NPN EPITAXIAL SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (Ta = 25  
)  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
20  
11  
3
V
V
Collector current  
50  
mA  
W
Collector power dissipation  
Junction Temperature  
PD  
0.2  
TJ  
+150  
-55 ~ +150  
°
°
C
C
Storage Temperature  
TSTG  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (Ta= 25  
, unless otherwise specified.)  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
SYMBOL  
TEST CONDITIONS MIN TYP MAX UNIT  
BVCBO IC=10µA  
BVCEO IC=1mA  
BVEBO IE=10µA  
20  
11  
3
V
V
V
ICBO  
IEBO  
VCB=10V  
VEB=2V  
0.5  
0.5  
0.5  
400  
µA  
µA  
V
Emitter cutoff current  
Collector-emitter saturation voltage  
DC current transfer ratio  
Transition frequency  
VCE(SAT) IC =10mA, IB= 5mA  
hFE  
fT  
VCE=10V, IC =5mA  
56  
VCE=10V, IE=10mA, f=500MHz  
VCB=10V, IE=0A, f=1MHz  
1.4 3.2  
GHz  
pF  
Output capacitance  
Cob  
0.8 1.5  
Collector-base time constant  
Noise factor  
rbb’·Cc VCB=10V, IC=10mA, f=31.8MHz  
NF VCE=6V, IC=2mA, f=500MHz, Rg=50  
4
12  
ps  
3.5  
dB  
CLASSIFICATION of hFE  
RANK  
A
B
C
D
RANGE  
56 ~ 110  
100 ~ 170  
120 ~ 270  
250 ~ 400  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 2  
QW-R220-018,B  
www.unisonic.com.tw  

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