2SD882SL-Q-T92-K [UTC-IC]

MEDIUM POWER LOW VOLTAGE TRANSISTOR; 中功率低电压晶体管
2SD882SL-Q-T92-K
元器件型号: 2SD882SL-Q-T92-K
生产厂家: UNISONIC TECHNOLOGIES    UNISONIC TECHNOLOGIES
描述和应用:

MEDIUM POWER LOW VOLTAGE TRANSISTOR
中功率低电压晶体管

晶体晶体管
PDF文件: 总4页 (文件大小:57K)
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型号参数:2SD882SL-Q-T92-K参数
是否Rohs认证 符合
生命周期Active
零件包装代码TO-92
包装说明CYLINDRICAL, O-PBCY-T3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8541.21.00.95
风险等级5.58
最大集电极电流 (IC)3 A
集电极-发射极最大电压30 V
配置SINGLE
最小直流电流增益 (hFE)100
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)80 MHz
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
UNISONIC TECHNOLOGIES CO., LTD
2SD882S
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772S
NPN SILICON TRANSISTOR
1
SOT-89
1
SOT-223
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
1
TO-92
*Pb-free plating product number: 2SD882SSL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SD882S-x-AA3-R
2SD882SL-x-AA3-R
2SD882S-x-AB3-R
2SD882SL-x-AB3-R
2SD882S-x-T92-B
2SD882SL-x-T92-B
2SD882S-x-T92-K
2SD882SL-x-T92-K
Package
SOT-223
SOT-89
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
2SD882SL-x-AA3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AA3: SOT-223, AB3: SOT-89, T92: TO-92
(3) x: refer to Classification of h
FE2
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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2SD882S
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
SOT-89
SOT-223
TO-92
DC
Pulse
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25
, unless otherwise specified )
RATINGS
40
30
5
3
7
0.6
UNIT
V
V
V
A
A
A
0.5
W
Power Dissipation
P
D
1
W
0.5
W
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note 1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
TEST CONDITIONS
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=0.1A
V
CB
=10V, I
E
=0, f=1MHz
MIN
40
30
5
TYP
MAX
UNIT
V
V
V
nA
nA
1000
1000
30
100
200
150
0.3
1.0
80
45
400
0.5
2.0
V
V
MHz
pF
Note 1: Pulse test: PW<300
µ
s, Duty Cycle<2%
CLASSIFICATION OF h
FE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
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2SD882S
TYPICAL CHARACTERISTICS
Static Characteristics
NPN SILICON TRANSISTOR
Derating Curve of Safe Operating
Areas
150
Collector Current, Ic (A)
Derating, I
C
(%)
1.6
1.2
0.8
0.4
0
0
I
B
=9mA
I
B
=8mA
I
B
=7mA
I
B
=6mA
I
B
=5mA
I
B
=4mA
I
B
=3mA
I
B
=2mA
I
B
=1mA
4
8
12
16
20
100
S/
50
bl
im
ite
d
n
io
at
ip
is s
D
lim
d
ite
0
-50
0
50
100
150
200
Collector-Emitter voltage (V)
Case Temperature, T
C
(℃)
Current Gain-Bandwidth Product
Current Gain-
Bandwidth Product, F
T
(MHz)
Safe Operating Area
10
1
Collector Current, I
C
(A)
10
3
S
1m
0.
10
m
S
1m
S
10
2
V
CE
=5V
I
B
=8mA
10
0
I
C
(max), DC
10
1
10
-1
I
C
(max), Pulse
10
-2
10
10
-2
0
10
-1
10
0
10
1
10
0
10
1
Collector-Emitter Voltage
10
2
Collector Current, Ic (A)
DC Current Gain
Saturation Voltage
Saturation Voltage (mV)
10
3
10
4
10
3
10
2
10
1
10
0 0
10
V
BE(SAT)
DC Current Gain, h
FE
10
2
V
CE
=2V
V
CE(SAT)
10
1
10
0
10
0
10
Collector Current, I
C
(mA)
10
1
3
10
4
10
1
10
2
10
3
10
4
Collector Current, I
C
(mA)
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2SD882S
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
Output Capacitance (pF)
NPN SILICON TRANSISTOR
10
3
I
E
=0
f=1MHz
10
2
10
1
10
0
10
0
10
-1
10
-2
10
-3
Collector-Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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