2SD882S-P-AB3-R 概述
MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体管 小信号双极晶体管
2SD882S-P-AB3-R 规格参数
生命周期: | Active | 零件包装代码: | SOT-89 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.58 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 160 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | Base Number Matches: | 1 |
2SD882S-P-AB3-R 数据手册
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PDF下载UNISONIC TECHNOLOGIES CO., LTD
2SD882S
NPN SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
1
SOT-89
ꢀ
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772S
1
SOT-223
APPLICATIONS
ꢀ
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
1
TO-92
*Pb-free plating product number: 2SD882SSL
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
B
B
E
E
2
3
E
E
B
B
2SD882S-x-AA3-R
2SD882S-x-AB3-R
2SD882S-x-T92-B
2SD882S-x-T92-K
2SD882SL-x-AA3-R
2SD882SL-x-AB3-R
2SD882SL-x-T92-B
2SD882SL-x-T92-K
SOT-223
SOT-89
TO-92
C
C
C
C
Tape Reel
Tape Reel
Tape Box
Bulk
TO-92
2SD882SL-x-AA3-R
(1)Packing Type
(2)Package Type
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AA3: SOT-223, AB3: SOT-89, T92: TO-92
(3) x: refer to Classification of h
(3)Rank
FE2
(4)Lead Plating
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R208-007,C
2SD882S
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
40
30
5
V
V
DC
3
A
Collector Current
Base Current
Pulse
ICP
7
A
IB
0.6
A
SOT-89
SOT-223
TO-92
0.5
1
W
W
W
℃
℃
Power Dissipation
PD
0.5
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN
40
30
5
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC=100µA, IE=0
BVCEO IC=1mA, IB=0
BVEBO IE=100µA, IC=0
V
V
nA
nA
ICBO
IEBO
hFE1
hFE2
VCB=30V, IE=0
VEB=3V, IC=0
1000
1000
Emitter Cut-off Current
VCE=2V, IC=20mA
VCE=2V, IC=1A
30
200
150
0.3
1.0
80
DC Current Gain (Note 1)
100
400
0.5
2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC=2A, IB=0.2A
VBE(SAT) IC=2A, IB=0.2A
V
V
fT
VCE=5V, IC=0.1A
MHz
pF
Cob
VCB=10V, IE=0, f=1MHz
45
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
CLASSIFICATION OF hFE2
ꢀ
RANK
Q
P
E
RANGE
100-200
160-320
200-400
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2SD882S
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Derating Curve of Safe Operating
Areas
Static Characteristics
150
100
1.6
IB=9mA
IB=8mA
IB=7mA
IB=6mA
IB=5mA
1.2
0.8
S
/
D
b
l
i
i
s
m
s
i
t
i
e
p
IB=4mA
d
a
t
i
50
0
o
n
IB=3mA
IB=2mA
l
i
0.4
0
m
i
t
e
d
IB=1mA
16
0
4
8
12
20
-50
0
50
100
150 200
Collector-Emitter voltage (V)
Case Temperature, TC (℃)
Current Gain-BandwidthProduct
Safe Operating Area
103
101
100
0
.1
1
1
m
m
0
m
S
S
S
102
VCE=5V
IB=8mA
IC(max), DC
101
100
10-1
10-2
IC(max), Pulse
101
10-2
10-1
100
101
100
102
Collector-Emitter Voltage
Collector Current, Ic (A)
DC CurrentGain
Saturation Voltage
VBE(SAT)
103
102
104
103
102
VCE=2V
VCE(SAT)
101
100
101
100
100
101
103
104
100
101
102
103
104
Collector Current, IC (mA)
Collector Current, IC (mA)
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2SD882S
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Collector OutputCapacitance
103
102
IE=0
f=1MHz
101
100
100
10-1
10-2
10-3
Collector-Base Voltage(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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2SD882S-P-AB3-R 相关器件
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2SD882S-P-T92-B | UTC | MEDIUM POWER LOW VOLTAGE TRANSISTOR | 获取价格 | |
2SD882S-P-T92-K | UTC | MEDIUM POWER LOW VOLTAGE TRANSISTOR | 获取价格 | |
2SD882S-P-T92-R | UTC | MEDIUM POWER LOW VOLTAGE TRANSISTOR | 获取价格 | |
2SD882S-Q-AA3-B | UTC | MEDIUM POWER LOW VOLTAGE TRANSISTOR | 获取价格 | |
2SD882S-Q-AA3-K | UTC | MEDIUM POWER LOW VOLTAGE TRANSISTOR | 获取价格 | |
2SD882S-Q-AA3-R | UTC | MEDIUM POWER LOW VOLTAGE TRANSISTOR | 获取价格 | |
2SD882S-Q-AB3-B | UTC | MEDIUM POWER LOW VOLTAGE TRANSISTOR | 获取价格 | |
2SD882S-Q-AB3-K | UTC | MEDIUM POWER LOW VOLTAGE TRANSISTOR | 获取价格 | |
2SD882S-Q-AB3-R | UTC | MEDIUM POWER LOW VOLTAGE TRANSISTOR | 获取价格 | |
2SD882S-Q-T92-B | UTC | MEDIUM POWER LOW VOLTAGE TRANSISTOR | 获取价格 |
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