2SD882SL-Q-T92-K [UTC-IC]

UNISONIC TECHNOLOGIES CO., LTD

2SD882S

MEDIUM POWER LOW

VOLTAGE TRANSISTOR

FEATURES

* High current output up to 3A

* Low saturation voltage

* Complement to 2SB772S

NPN SILICON TRANSISTOR

1

SOT-89

1

SOT-223

APPLICATIONS

* Audio power amplifier

* DC-DC convertor

* Voltage regulator

1

TO-92

*Pb-free plating product number: 2SD882SSL

ORDERING INFORMATION

Order Number

Normal

Lead Free Plating

2SD882S-x-AA3-R

2SD882SL-x-AA3-R

2SD882S-x-AB3-R

2SD882SL-x-AB3-R

2SD882S-x-T92-B

2SD882SL-x-T92-B

2SD882S-x-T92-K

2SD882SL-x-T92-K

Package

SOT-223

SOT-89

TO-92

TO-92

Pin Assignment

1

2

3

B

C

E

B

C

E

E

C

B

E

C

B

Packing

Tape Reel

Tape Reel

Tape Box

Bulk

2SD882SL-x-AA3-R

(1)Packing Type

(2)Package Type

(3)Rank

(4)Lead Plating

(1) B: Tape Box, K: Bulk, R: Tape Reel

(2) AA3: SOT-223, AB3: SOT-89, T92: TO-92

(3) x: refer to Classification of h

FE2

(4) L: Lead Free Plating, Blank: Pb/Sn

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Copyright © 2005 Unisonic Technologies Co., Ltd

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QW-R208-007,C

2SD882S

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

SOT-89

SOT-223

TO-92

DC

Pulse

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATING

(Ta=25

℃

, unless otherwise specified )

RATINGS

40

30

5

3

7

0.6

UNIT

V

V

V

A

A

A

0.5

W

Power Dissipation

P

D

1

W

0.5

W

Junction Temperature

T

J

+150

℃

Storage Temperature

T

STG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS

(Ta=25

℃

, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain (Note 1)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

SYMBOL

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE1

h

FE2

V

CE(SAT)

V

BE(SAT)

f

T

Cob

TEST CONDITIONS

I

C

=100µA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=100µA, I

C

=0

V

CB

=30V, I

E

=0

V

EB

=3V, I

C

=0

V

CE

=2V, I

C

=20mA

V

CE

=2V, I

C

=1A

I

C

=2A, I

B

=0.2A

I

C

=2A, I

B

=0.2A

V

CE

=5V, I

C

=0.1A

V

CB

=10V, I

E

=0, f=1MHz

MIN

40

30

5

TYP

MAX

UNIT

V

V

V

nA

nA

1000

1000

30

100

200

150

0.3

1.0

80

45

400

0.5

2.0

V

V

MHz

pF

Note 1: Pulse test: PW<300

µ

s, Duty Cycle<2%

CLASSIFICATION OF h

FE2

RANK

RANGE

Q

100-200

P

160-320

E

200-400

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QW-R208-007,C

2SD882S

TYPICAL CHARACTERISTICS

Static Characteristics

NPN SILICON TRANSISTOR

Derating Curve of Safe Operating

Areas

150

Collector Current, Ic (A)

Derating, I

C

(%)

1.6

1.2

0.8

0.4

0

0

I

B

=9mA

I

B

=8mA

I

B

=7mA

I

B

=6mA

I

B

=5mA

I

B

=4mA

I

B

=3mA

I

B

=2mA

I

B

=1mA

4

8

12

16

20

100

S/

50

bl

im

ite

d

n

io

at

ip

is s

D

lim

d

ite

0

-50

0

50

100

150

200

Collector-Emitter voltage (V)

Case Temperature, T

C

(℃)

Current Gain-Bandwidth Product

Current Gain-

Bandwidth Product, F

T

(MHz)

Safe Operating Area

10

1

Collector Current, I

C

(A)

10

3

S

1m

0.

10

m

S

1m

S

10

2

V

CE

=5V

I

B

=8mA

10

0

I

C

(max), DC

10

1

10

-1

I

C

(max), Pulse

10

-2

10

10

-2

0

10

-1

10

0

10

1

10

0

10

1

Collector-Emitter Voltage

10

2

Collector Current, Ic (A)

DC Current Gain

Saturation Voltage

Saturation Voltage (mV)

10

3

10

4

10

3

10

2

10

1

10

0 0

10

V

BE(SAT)

DC Current Gain, h

FE

10

2

V

CE

=2V

V

CE(SAT)

10

1

10

0

10

0

10

Collector Current, I

C

(mA)

10

1

3

10

4

10

1

10

2

10

3

10

4

Collector Current, I

C

(mA)

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2SD882S

TYPICAL CHARACTERISTICS(Cont.)

Collector Output Capacitance

Output Capacitance (pF)

NPN SILICON TRANSISTOR

10

3

I

E

=0

f=1MHz

10

2

10

1

10

0

10

0

10

-1

10

-2

10

-3

Collector-Base Voltage (V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R208-007,C