4N40L-TMS-T [UTC]
Power Field-Effect Transistor;
| 型号： | 4N40L-TMS-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总5页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
4N40
Power MOSFET
4A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N40 is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 4N40 is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
FEATURES
* High switching speed
* RDS(ON)<1.5Ω @ VGS=10V, ID=2A
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
4N40L-TA3-T
Halogen Free
1
2
3
S
S
S
S
S
4N40G-TA3-T
4N40G-TF3-T
4N40G-TM3-T
4N40G-TMS-T
4N40G-TN3-R
TO-220
TO-220F
TO-251
TO-251S
TO-252
G
G
G
G
G
D
D
D
D
D
Tube
Tube
4N40L-TF3-T
4N40L-TM3-T
Tube
4N40L-TMS-T
Tube
4N40L-TN3-R
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R502-550.D
4N40
Power MOSFET
MARKING
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4N40
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
400
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous (TC=25°C)
Pulsed (Note 1)
4
A
Drain Current
IDM
8
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
140
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 3)
TO-220
dv/dt
4.5
60
Power Dissipation
Derate above 25°C
TO-220F
27
W
TO-251/TO-251S/TO-252
TO-220
52
W
PD
0.48
0.22
0.41
+150
-55~+150
W/°C
W/°C
W/°C
°C
TO-220F
TO-251/TO-252
Junction Temperature
Storage Temperature
TJ
TSTG
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=18mH, IAS=4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
SYMBOL
RATINGS
62.5
110
UNIT
°C/W
Junction to Ambient
θJA
TO-251/TO-251S/TO-252
TO-220
2.08
4.5
Junction to Case
TO-220F
θJC
°C/W
TO-251/TO-251S/TO-252
2.4
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4N40
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNI
T
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
DS=400V, VGS=0V
VDS=320V, TC=125°С
GS=+30V, VDS=0V
VGS=-30V, VDS=0V
400
V
V
1
µA
Drain-Source Leakage Current
Gate- Source Leakage Current
IDSS
100 µA
+100 nA
-100 nA
Forward
Reverse
V
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
RDS(ON) VGS=10V, ID=2A
2.0
4.0
1.8
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
315
120
40
pF
pF
pF
Output Capacitance
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
tD(ON)
tR
tD(OFF)
tF
30
60
ns
ns
ns
ns
VDD=30V, ID=0.5A, RG=25ꢀ
(Note 2, 3)
Turn-OFF Delay Time
Fall-Time
100
68
Total Gate Charge
QG
18.5 30 nC
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
VDD=50V, ID=1.3A, VGS=10V, IG=100µA
4.5
5.5
nC
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
VSD
trr
IS=4A, VGS=0V
1.4
V
IS=4A, VGS=0V, dIF/dt=100A/µs(Note 2)
800
ns
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
3. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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4N40
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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