DTC113TL-AN3-R [UTC]

NPN DIGITAL TRANSISTOR; NPN数字晶体管
DTC113TL-AN3-R
型号: DTC113TL-AN3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

NPN DIGITAL TRANSISTOR
NPN数字晶体管

晶体 数字晶体管
文件: 总3页 (文件大小:154K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
DTC113T  
NPN SILICON TRANSISTOR  
NPN DIGITAL TRANSISTOR  
(BUILT- IN BIAS RESISTORS)  
„
FEATURES  
* Built-in bias resistors that implies easy ON/OFF applications.  
* The bias resistors are thin-film resistors with complete isolation to  
allow negative input.  
„
EQUIVALENT CIRCUIT  
„ ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
E
E
E
2
B
B
B
3
C
C
C
DTC113TL-AE3-R  
DTC113TL-AL3-R  
DTC113TL-AN3-R  
DTC113TG-AE3-R  
DTC113TG-AL3-R  
DTC113TG-AN3-R  
SOT-23  
SOT-323  
SOT-523  
Tape Reel  
Tape Reel  
Tape Reel  
„
MARKING  
www.unisonic.com.tw  
Copyright © 2011 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R223-001.B  
DTC113T  
NPN SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (TA=25, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VEBO  
VCEO  
IC  
RATINGS  
50  
UNIT  
V
Collector to Base Voltage  
Emitter to Base Voltage  
Collector to Emitter voltage  
Collector Current  
6
V
50  
V
100  
mA  
mA  
Peak Collector Current  
ICM  
200  
SOT-23/SOT-323  
SOT-523  
200  
Collector Power Dissipation  
PC  
mW  
150  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55~+150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
„
ELECTRICAL CHARACTERISTICS (TA=25)  
PARAMETER  
SYMBOL  
BVCEO  
ICBO  
TEST CONDITIONS  
IC=100μA, RBE=∞  
MIN TYP MAX UNIT  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
50  
100  
0.7  
V
VCB=50V, IE=0  
0.1  
μA  
DC Current Gain  
hFE  
VCE=5V, IC=1mA  
IC=10mA, IB=0.5mA  
Collector-Emitter Saturation Voltage  
Input Resistance  
VCE(SAT)  
R1  
0.3  
1.3  
V
1.0  
kΩ  
Current Gain Bandwidth Product  
fT  
VCE=6V, IE=-10mA  
200  
MHz  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R223-001.B  
www.unisonic.com.tw  
DTC113T  
NPN SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
DC Forward Current Gain vs. Collector Current  
VCE =5V  
Collector Current vs. Input Off Voltage  
VCE =5V  
1000  
1000  
100  
100  
10  
10  
10  
1
10  
100  
0
0.5  
1
1.5  
2
Collector Current, Ic (mA)  
Input Off VoltageVI(OFF) (V)  
Input On Voltage vs. Collector Current  
VCE =5V  
1
0.1  
0.1  
1
10  
100  
Collector Current, Ic (mA)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R223-001.B  
www.unisonic.com.tw  

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