概述
规格参数
数据手册DTC114TL-AE3-R 概述
NPN DIGITAL TRANSISTOR NPN数字晶体管 小信号双极晶体管
DTC114TL-AE3-R 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | SMALL OUTLINE, R-PDSO-G3 | 针数： | 3 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.21.00.75 | 风险等级： | 5.57 |
| Is Samacsys： | N | 其他特性： | BUILT-IN BIAS RESISTOR |
| 最大集电极电流 (IC)： | 0.1 A | 集电极-发射极最大电压： | 50 V |
| 配置： | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE)： | 100 |
| JESD-30 代码： | R-PDSO-G3 | 元件数量： | 1 |
| 端子数量： | 3 | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | NPN |
| 认证状态： | Not Qualified | 表面贴装： | YES |
| 端子形式： | GULL WING | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | 标称过渡频率 (fT)： | 250 MHz |
| Base Number Matches： | 1 |
DTC114TL-AE3-R 数据手册
通过下载DTC114TL-AE3-R数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载UNISONIC TECHNOLOGIES CO., LTD
DTC114T
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
E
E
E
2
B
B
B
3
C
C
C
DTC114TL-AE3-R
DTC114TL-AL3-R
DTC114TL-AN3-R
DTC114TG-AE3-R
DTC114TG-AL3-R
DTC114TG-AN3-R
SOT-23
SOT-323
SOT-523
Tape Reel
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R206-054,D
DTC114T
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
50
V
5
V
100
mA
mW
mW
℃
SOT-23/SOT-323
SOT-523
200
Power Dissipation
PD
150
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
50
50
5
TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
BVCBO IC=50μA
BVCEO IC=1mA
V
V
V
BVEBO IE=50μA
VCE(SAT) IC=10mA, IB=1mA
0.3
0.5
0.5
600
13
V
ICBO
IEBO
hFE
RIN
fT
VCB=50V
μA
μA
Emitter Cut-off Current
VEB=4V
DC Current Gain
VCE=5V, IC=1mA
100
7
300
10
Input Resistance
kΩ
Current Gain Bandwidth Product
VCE=10V, IE=-5mA, f=100MHz
250
MHz
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-054,D
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DTC114T
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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