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K596L-B-T9S-K [UTC]

CAPACITOR MICROPHONE APPLICATIONS; 电容话筒的应用
K596L-B-T9S-K
型号: K596L-B-T9S-K
厂家: Unisonic Technologies    Unisonic Technologies
描述:

CAPACITOR MICROPHONE APPLICATIONS
电容话筒的应用

晶体 小信号场效应晶体管 放大器
文件: 总3页 (文件大小:72K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

K596L-C-T9S-K

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92SP, 3 PIN

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UTC

K596L-E-T9S-K

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92SP, 3 PIN

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UTC

K596L-X-T9S-K

CAPACITOR MICROPHONE APPLICATIONS

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UTC

K596P

TRANSISTOR 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, TO-92S, 3 PIN, FET General Purpose Small Signal

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MCC

K596_08

CAPACITOR MICROPHONE APPLICATIONS

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UTC

K5A2

Snap Action Key Switch Switch

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CK-COMPONENTS

K5A22N

Snap Action Key Switch Switch

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ITT

K5A22NAG

Snap Action Key Switch Switch

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CK-COMPONENTS

K5A22NAU

Snap Action Key Switch Switch

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CK-COMPONENTS

K5A24N

Snap Action Key Switch Switch

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ITT

K5A26N

Snap Action Key Switch Switch

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ITT

K5A2AG

Snap Action Key Switch Switch

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CK-COMPONENTS

K5A2AU

Snap Action Key Switch Switch

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CK-COMPONENTS

K5A3240YBA-T370

Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69

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SAMSUNG

K5A3240YBA-T870

Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69

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SAMSUNG

K5A3240YBA-T970

Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69

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SAMSUNG

K5A3240YBB-T755

Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69

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SAMSUNG

K5A3240YBB-T855

Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA69, TBGA-69

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SAMSUNG

K5A3240YBC-T755

Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

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SAMSUNG

K5A3240YBC-T7550

Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 0.80 MM PITCH, 1.20 MM HEIGHT, TBGA-69

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SAMSUNG