MPSA13(SOT-89) [UTC-IC]

Transistor;
MPSA13(SOT-89)
元器件型号: MPSA13(SOT-89)
生产厂家: UNISONIC TECHNOLOGIES    UNISONIC TECHNOLOGIES
描述和应用:

Transistor

PDF文件: 总3页 (文件大小:92K)
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型号参数:MPSA13(SOT-89)参数
生命周期Active
包装说明,
Reach Compliance Codecompliant
风险等级5.61
最大集电极电流 (IC)0.5 A
配置DARLINGTON
最小直流电流增益 (hFE)10000
最高工作温度150 °C
极性/信道类型NPN
最大功率耗散 (Abs)0.625 W
子类别Other Transistors
表面贴装YES
标称过渡频率 (fT)125 MHz
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR
DARLINGTON TRANSISTOR
DESCRIPTION
The UTC MPSA13 is a Darlington transistor.
1
FEATURES
*Collector-Emitter Voltage: V
CES
= 30V
*Collector Dissipation: Pc (mas) = 625 mW
SOT-89
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CES
V
EBO
Pc
Ic
T
j
T
STG
VALUE
30
30
10
625
500
150
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Current Gain Bandwidth Product
Pulse test: Pulse Width<300µs, Duty Cycle=2%
SYMBOL
BV
CES
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
TEST CONDITIONS
Ic=100µA,I
B
=0
V
CB
=30V,I
E
=0
V
EB
=10V,Ic=0
V
CE
=5V,Ic=100mA
Ic=100mA,I
B
=0.1mA
V
CE
=5V,Ic=100mA
V
CE
=5V,Ic=10mA,
f=100MHz
MIN
30
MAX
100
100
UNIT
V
nA
nA
V
V
MHz
10000
1.5
2.0
125
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R208-001,B
UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Current Gain & Collector Current
1000k
I(tot)
mA
hFE
hFE@V
CE
=5V
10000
I(tot)
mA
V
BE
(sat)@IC=100I
B
1000
V
CE
(sat)@IC=100I
B
Saturation Voltage & Collector Current
100k
10k
0.1
Saturation Voltage (mV)
1000
1
10
100
Collector Current (mA)
100
1
10
100
Collector Current (mA)
1000
On Voltage & Collector Current
10000
I(tot)
mA
Capacitance (pF)
10
Capacitance & Reverse-Biased Voltage
On Voltage (mV)
I(tot)
mA
1000
V
BE
(on)@V
CE
=5V
Cob
100
0.1
1
10
100
Collector Current (mA)
1000
1
1
10
Reverse-Biased Voltage(V)
Safe Operating Area
100
Cutoff Frequency & Collector Current
1000
I(tot)
mA
V
CE
=5V
100
1000
Collector Current -Ic (mA)
Cutoff Frequency (MHz)
100
I(tot)
mA
P
T
=1s
P
T
=100ms
P
T
=1ms
10
10
1
10
100
Collector Current (mA)
1000
1
1
10
Forward Voltage-V
CE
(V)
100
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R208-001,B
UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR
Power-Dissipation
vs Ambient Temperature
1
PD-Power Dissipation(W)
0.75
I(tot)
mA
0.5
0.25
0
0
25
50
75
100
Temperature (℃)
125
150
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R208-001,B
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