TF2123G-E3-AN3-R
更新时间：2024-09-18 17:41:35
品牌：UTC
描述：Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET,
概述
规格参数
数据手册TF2123G-E3-AN3-R 概述
Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, 小信号场效应晶体管
TF2123G-E3-AN3-R 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code： | compliant |
| 风险等级： | 5.6 | 配置： | SINGLE |
| 最大漏极电流 (ID)： | 0.01 A | FET 技术： | JUNCTION |
| JESD-30 代码： | R-PDSO-G3 | 元件数量： | 1 |
| 端子数量： | 3 | 工作模式： | DEPLETION MODE |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | N-CHANNEL | 表面贴装： | YES |
| 端子形式： | GULL WING | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | AMPLIFIER |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
TF2123G-E3-AN3-R 数据手册
通过下载TF2123G-E3-AN3-R数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载UNISONIC TECHNOLOGIES CO., LTD
TF2123
N-CHANNEL JFET
N-CHANNEL JFET CAPACITOR
MICROPHONE APPLICATIONS
DESCRIPTION
The UTC TF2123 uses advanced trench technology to provide
excellent RDS (ON), low gate charge and operation with low gate
voltages. This device is suitable for use in capacitor microphone
applications.
FEATURES
*Suited for use in audio, telephone capacitor microphones.
*Good voltage characteristic.
*Good transient characteristic.
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
Packing
1
S
S
S
2
D
D
D
3
TF2123G-xx-AE3-R
TF2123G-xx-AN3-R
TF2123G-xx-AQ3-R
SOT-23
SOT-523
SOT-723
G
G
G
Tape Reel
Tape Reel
Tape Reel
Note: Pin Assignment: S: Source
D: Drain
G: Gate
TF2123L-xx-AE3-R
(1) R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Rank
(2) AE3: SOT-23, AN3: SOT-523, AQ3: SOT-723
(3) xx: refer to CLASSIFICATION OF IDSS
(4) G: Halogen Free and Lead Free
(4)Green Package
MARKING
TF2123-E3
TF2123-E4
E4
TF2123-E5
E3
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R206-106.C
TF2123
N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS
( TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATING
-20
UNIT
V
Gate Drain Voltage
Gate Current
VGDO
IG
10
mA
mA
mW
°С
Drain Current
ID
10
Power Dissipation
Junction Temperature
Storage Temperature
PD
100
TJ
150
TSTG
-55~+150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
BVGDO
TEST CONDITIONS
IG=-100μA
MIN TYP MAX UNIT
Gate Drain Breakdown Voltage
Gate Source Cut off Voltage
-20
V
VGS(OFF)
VDS=2V, ID=1μA
TF2123-E3
-0.38
V
100
150
210
170
270
350
μA
μA
μA
μA
μA
μA
mS
pF
dB
dB
dB
Zero-Gate Voltage Drain Current
Drain Current
IDSS
VDS=2V, VGS=0V
TF2123-E4
TF2123-E5
IDSS=100μA
IDSS=250μA
IDSS=350μA
98
244
337
1.43
5.0
VDD=2V, RL=2.2kΩ,
ID
Cg=5pF
Forward Transfer Admittance
Input Capacitance
lyfsl
CISS
VDS=2V, VGS=0V
VDS=2, VGS=0, f=1MHz
I
DSS=100μA
0.1
VDD=2V, RL=2.2kΩ,
Cg=5pF, f=1kHz,
VIN=10mV
Voltage Gain
IDSS=250μA
IDSS=350μA
1.95
2.25
GV
VIN=10mV, RL=2.2kΩ, Cg=5pF,
f=1kH, VDD=2V to1.5V
Delta Voltage Gain
-0.5
-0.2
dB
dB
∆GV
∆GV(f)
VNO
VIN=10mV, RL=2.2kΩ, Cg=5pF,
Frequency Characteristic
Output Noise Voltage
Total Harmonic distortion
V
DD=2V, f=1kHz to 110kHz
RL=1kΩ
RL=2.2kΩ
DD=2V, RL=2.2kΩ, Cg=5pF, f=1kHz,
VIN=50mV
-107
-102
dB
dB
VDD=2V, Cg=5pF,
A-curve filter
V
THD
0.9
%
CLASSIFICATION OF IDSS
RANK
E3
E4
E5
210-350
RANGE
100-170
150-270
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-106.C
www.unisonic.com.tw
TF2123
N-CHANNEL JFET
TEST CIRCUIT
(TA=25C)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R206-106.C
www.unisonic.com.tw
TF2123
N-CHANNEL JFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R206-106.C
www.unisonic.com.tw
TF2123G-E3-AN3-R 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| TF2123G-E3-AQ3-R | UTC | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, | 获取价格 |
|
| TF2123G-E4-AN3-R | UTC | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, | 获取价格 |
|
| TF2123G-E4-AQ3-R | UTC | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, | 获取价格 |
|
| TF2123G-E5-AE3-R | UTC | Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236, | 获取价格 |
|
| TF2123G-XX-AE3-R | UTC | N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS | 获取价格 |
|
| TF2123G-XX-AN3-R | UTC | N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS | 获取价格 |
|
| TF2123G-XX-AQ3-R | UTC | N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS | 获取价格 |
|
| TF2123L-A-AE3-R | UTC | N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS | 获取价格 |
|
| TF2123L-B-AN3-R | UTC | N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS | 获取价格 |
|
| TF2123L-C-AQ3-R | UTC | N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS | 获取价格 |
|
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