10N60KG-TF1-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 10N60KG-TF1-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
10N60K-MT
Preliminary
Power MOSFET
10A, 600V N-CHANNEL
POWER MOSFET
1
1
TO-220F
TO-220
DESCRIPTION
The UTC 10N60K-MT is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
1
1
TO-220F1
TO-220F2
FEATURES
1
1
* RDS(ON) < 0.75Ω @ VGS =10V, ID = 5 A
* Low gate charge ( typical 33 nC)
* Low Crss ( typical 18 pF)
* Fast switching
TO-263
TO-220F3
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
S
S
10N60KL-TA3-T
10N60KL-TF3-T
10N60KL-TF1-T
10N60KL-TF2-T
10N60KL-TF3T-T
10N60KL-TQ2-T
10N60KL-TQ2-R
10N60KG-TA3-T
10N60KG-TF3-T
10N60KG-TF1-T
10N60KG-TF2-T
10N60KG-TF3T-T
10N60KG-TQ2-T
10N60KG-TQ2-R
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-263
Tube
Tube
G
G
G
G
G
G
G
D
D
D
D
D
D
D
Tube
Tube
Tube
Tube
TO-263
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
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QW-R205-022.h
10N60K-MT
Preliminary
Power MOSFET
MARKING
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10N60K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
± 30
10
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
A
Continuous
ID
10
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
38
A
EAS
200
12
mJ
mJ
V/ns
W
Avalanche Energy
EAR
Peak Diode Recovery dv/dt (Note 4)
TO-220/TO-263
dv/dt
4.5
156
Power Dissipation
PD
TO-220F/TO-220F1
TO-220F2/TO-220F3
52
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
°C
°C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 4mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
UNIT
°C/W
°C/W
Junction to Ambient
θJA
TO-220/TO-263
0.8
Junction to Case
θJC
TO-220F/TO-220F1
TO-220F2/TO-220F3
2.4
°C/W
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10N60K-MT
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID= 250μA
600
V
VDS=600V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
1
µA
Forward
Reverse
100 nA
-100 nA
V/°C
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250 µA, Referenced to 25°C
0.7
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.0
4.0
0.63 0.75
V
VGS=10V, ID=5A
ꢀ
CISS
COSS
CRSS
1570 2040 pF
166 215 pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge
18
24
pF
QG
QGS
QGD
tD(ON)
tR
33
9
57
nC
nC
nC
ns
ns
ns
ns
VDS=50V, ID=1.3A, VGS=10V
Gate-Source Charge
IG=100μA (Note1, 2)
Gate-Drain Charge
8.5
67
84
205
95
Turn-On Delay Time
Turn-On Rise Time
VDD=30V, ID=0.5A, RG=25ꢀ,
VGS=0V (Note1, 2)
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, IS=10A
1.4
10
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
38
A
Reverse Recovery Time
trr
VGS=0V, IS=10A,
dIF/dt=100A/µs (Note1)
420
4.2
ns
Reverse Recovery Charge
QRR
µC
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
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10N60K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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10N60K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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10N60K-MT
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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