10N65K-MT [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 10N65K-MT |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
10N65K-MT
Power MOSFET
10A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N65K-MT is an N-channel Power MOSFET using
UTC’s advanced technology to provide customers a minimum
on-state resistance and superior switching performance, etc.
The UTC 10N65K-MT is generally applied in high efficient DC to
DC converters, PWM motor controls and bridge circuits, etc.
FEATURES
* RDS(ON) < 1.0Ω @ VGS=10V, ID = 5 A
* High Switching Speed
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
10N65KL-TA3-T
10N65KL-TF3-T
10N65KL-TF1-T
10N65KL-TF2-T
10N65KL-TF3T-T
10N65KG-TA3-T
10N65KG-TF3-T
10N65KG-TF1-T
10N65KG-TF2-T
10N65KG-TF3T-T
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
Tube
Tube
Tube
Tube
Tube
G
G
G
G
G
D
D
D
D
D
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
650
±30
10
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
A
Continuous
ID
10
A
Drain Current
Pulsed (Note 2)
IDM
38
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
400
4.5
mJ
V/ns
W
Peak Diode Recovery dv/dt (Note 4)
TO-220
dv/dt
156
TO-220F/TO-220F1
TO-220F3
TO-220F2
Power Dissipation
PD
50
W
48
W
°C
°C
°C
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=8mH, IAS=10A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJA
TO-220
0.8
TO-220F/TO-220F1
TO-220F3
θJC
2.5
2.6
°C/W
°C/W
TO-220F2
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10N65K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
650
2.0
V
VDS = 650V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
1
µA
Forward
Reverse
100 nA
-100 nA
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
4.0
1.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID = 5A
Ω
CISS
COSS
CRSS
750 1500 pF
130 180 pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
9
20
pF
tD(ON)
tR
tD(OFF)
tF
65
80
ns
Turn-On Rise Time
VDD=30V, ID =0.5A,
RG =25Ω (Note 1, 2)
80 150 ns
200 260 ns
90 150 ns
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
30
9
50 nC
nC
V
DS=50V, ID=1.3A,
Gate-Source Charge
QGS
QGD
VGS=10 V (Note 1, 2)
Gate-Drain Charge
8
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS =10A
1.4
10
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
38
A
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
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10N65K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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10N65K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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10N65K-MT
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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