11N50L-TA3-T [UTC]
11A, 500V N-CHANNEL POWER MOSFET; 11A ， 500V N沟道功率MOSFET
| 型号： | 11N50L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 11A, 500V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
11N50
Preliminary
Power MOSFET
11A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 11N50 is an N-channel enhancement mode power
MOSFET. It uses UTC advanced planar stripe, DMOS technology to
provide customers perfect switching performance, minimal on-state
resistance. It also can withstand high energy pulse in the avalanche
and commutation mode.
The UTC 11N50 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON)=0.55Ω @ VGS=10V
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
11N50L-TA3-T
11N50L-TF1-T
11N50L-TF3-T
11N50G-TA3-T
11N50G-TF1-T
11N50G-TF3-T
TO-220
TO-220F1
TO-220F
G
G
G
Tube
Tube
Tube
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-462.c
11N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
500
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
VGSS
±30
V
TC=25°C
11 (Note 2)
7 (Note 2)
44 (Note 2)
670
A
Continuous Drain Current
ID
TC=100°C
A
Pulsed Drain Current (Note 3)
IDM
EAS
A
Single Pulsed Avalanche Energy(Note 4)
Peak Diode Recovery dv/dt (Note 5)
TO-220
mJ
V/ns
dv/dt
4.5
195
TC=25°C
TO-220F1
48
W
TO-220F
TO-220
147
Power Dissipation
PD
1.56
Derate above
25°C
TO-220F1
TO-220F
0.39
W/°C
1.18
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=10mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C
5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-220
0.64
Junction to Case
TO-220F1
TO-220F
θJC
2.58
°C/W
0.85
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11N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
500
V
V/°C
µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
0.5
VDS=500V, VGS=0V
10
Drain-Source Leakage Current
IDSS
IGSS
VDS=500V, TJ=125°C
VDS=0V ,VGS=±30V
100
µA
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
±100 nA
VGS(TH)
RDS(ON)
VDS= VGS, ID=250µA
VGS=10V, ID=5.5A
2.0
4.0
0.48 0.55
V
Ω
CISS
COSS
CRSS
1515 2055 pF
Output Capacitance
VDS=25V,VGS=0V,f=1.0MHz
185 235
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
25
30
QG
QGS
QGD
tD(ON)
tR
43
8
55
nC
nC
nC
ns
ns
ns
ns
VDS=400V, VGS=10V, ID=11A
(Note 1, 2)
Gate-Source Charge
Gate-Drain Charge
19
24
70
Turn-ON Delay Time
57
Turn-ON Rise Time
150
VDD=250V, ID=11A, RG=3Ω
(Note 1, 2)
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
120 250
75
160
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
11
44
A
A
IS =11A, VGS=0V
1.4
V
90
ns
μC
VGS=0V, IS=11A,
dIF/dt=100A/μs (Note 1)
QRR
1.5
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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11N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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11N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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11N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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