11N90L-TF1-T [UTC]
11 Amps, 900 Volts N-CHANNEL POWER MOSFET; 11安培， 900伏特N沟道功率MOSFET
| 型号： | 11N90L-TF1-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 11 Amps, 900 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
11N90
Preliminary
Power MOSFET
11 Amps, 900 Volts
N-CHANNEL POWER MOSFET
1
TO-220
DESCRIPTION
The UTC 11N90 is an N-channel enhancement mode Power
FET using UTC’s advanced technology to provide costomers with
planar stripe and DMOS technology. This technology specializes in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
1
TO-220F1
The UTC 11N90 is universally applied in high efficiency switch
mode power supply,
FEATURES
* 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
* Halogen Free
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
11N90G-TA3-T
11N90G-TF1-T
1
2
D
D
3
S
S
11N90L-TA3-T
11N90L-TF1-T
TO-220
G
G
Tube
Tube
TO-220F1
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-497.a
11N90
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
900
±30
V
Continuous
11
A
Drain Current
Pulsed (Note 1)
IDM
28.0
960
A
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
mJ
mJ
V/ns
W
Avalanche Energy
EAR
12
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
TO-220
TO-220F1
160
Power Dissipation
PD
50
W
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
TO-220
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θJA
TO-220F1
TO-220
62.5
0.78
θJC
TO-220F1
2.48
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11N90
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ID=250µA, VGS=0V
900
V
△BVDSS/△TJ ID=250µA, Referenced to 25°C
1.0
V/°C
VDS=900V, VGS=0V
IDSS
10
Drain-Source Leakage Current
Gate- Source Leakage Current
µA
V
DS=720V, TC=125°C
100
Forward
Reverse
VGS=+30V, VDS=0V
GS=-30V, VDS=0V
100 nA
-100 nA
IGSS
V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=5.5A
3.0
5.0
0.91 1.1
V
Ω
S
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
VDS=50V, ID=5.5A (Note 4)
CISS
COSS
CRSS
2530 3290 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
215
23
280 pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
30
80
pF
QG
QGS
QGD
tD(ON)
tR
60
13
25
60
nC
nC
nC
VGS=10V, VDS=720V, ID=11.0A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 4, 5)
130 ns
VDD=450V, ID=11.0A, RG=25Ω
(Note 4, 5)
130 270 ns
130 270 ns
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
85
180 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
(Note1)
IS
11
A
A
ISM
28.0
Drain-Source Diode Forward Voltage
(Note 4)
VSD
IS=11A, VGS=0V
GS=0V, IS=11.0A, dIF/dt=100A/µs
1.4
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
V
1000
17.0
ns
(Note 4)
QRR
µC
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 37mH, IAS = 7.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 11.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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11N90
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
VDS
1
2
BVDSS
BVDSS-VDD
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
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11N90
Preliminary
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
(Driver
10V
)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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11N90
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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