12N40K-MT [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 12N40K-MT |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
12N40K-MT
Preliminary
Power MOSFET
12A, 400V N-CHANNEL
POWER MOSFET
1
1
DESCRIPTION
TO-220F
TO-220
The UTC 12N40K-MT is an N-channel mode power MOSFET
using UTC’ s advanced technology to provide customers with
planar stripe and DMOS technology. This technology specializes
in allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC 12N40K-MT is universally applied in electronic lamp
ballast based on half bridge topology and high efficient switched
mode power supply.
1
1
TO-220F2
TO-220F1
FEATURES
* RDS(ON) < 0.47Ω @ VGS = 10 V, ID = 12 A
* High switching speed
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
Packing
Lead Free
12N40KL-TA3-T
Halogen Free
1
2
3
S
S
S
S
12N40KG-TA3-T
12N40KG-TF3-T
12N40KG-TF1-T
12N40KG-TF2-T
TO-220
TO-220F
TO-220F1
TO-220F2
G
G
G
G
D
D
D
D
Tube
Tube
Tube
Tube
12N40KL-TF3-T
12N40KL-TF1-T
12N40KL-TF2-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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12N40K-MT
Preliminary
Power MOSFET
MARKING
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12N40K-MT
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
400
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous (TC=25°C)
Pulsed (Note 2)
12
A
Drain Current
IDM
48
A
Single Pulsed Avalanche Energy
EAS
474
mJ
W
TO-220
135
Power Dissipation
Derate above 25°C
TO-220F/TO-220F1
TO-220F2
34
W
PD
TO-220
1.08
0.27
W/°C
W/°C
TO-220F/TO-220F1
TO-220F2
Junction Temperature
Storage Temperature
TJ
+150
°C
°C
TSTG
-55~+150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L=7.27mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C
5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°С/W
°С/W
Junction to Ambient
Junction to Case
θJA
TO-220
0.92
θJC
TO-220F/TO-220F1
TO-220F2
3.7
°С/W
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12N40K-MT
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
400
2.0
V
1
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=12A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.47
ꢀ
CISS
COSS
CRSS
750
153
10
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
31.3
8.9
8.6
62
nC
nC
nC
ns
ns
ns
ns
VDS= 50V, VGS= 10V, ID= 0.3A,
Gate-Source Charge
Gate-Drain Charge
ID=100µA (Note 1, 2)
Turn-ON Delay Time
Rise Time
VDS= 30V, VGS= 10V, ID = 0.3A,
RG = 25ꢀ (Note 1, 2)
94
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
162
96
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
VSD
IS
IS=12A, VGS=0V
1.4
12
48
V
A
A
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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12N40K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
Period
VGS
(Driver)
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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12N40K-MT
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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12N40K-MT
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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