12N60L-TF3-T [UTC]
12A, 600V N-CHANNEL POWER MOSFET; 12A , 600V N沟道功率MOSFET型号: | 12N60L-TF3-T |
厂家: | Unisonic Technologies |
描述: | 12A, 600V N-CHANNEL POWER MOSFET |
文件: | 总7页 (文件大小:366K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
12N60
Power MOSFET
12A, 600V N-CHANNEL
POWER MOSFET
1
1
TO-220
DESCRIPTION
The UTC 12N60 are N-Channel enhancement mode power
TO-220F
TO-220F1
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
1
1
FEATURES
* RDS(ON) = 0.8Ω @VGS = 10 V
TO-262
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
12N60L-TA3-T
12N60L-TF1-T
12N60L-TF3-T
12N60L-T2Q-T
12N60G-TA3-T
12N60G-TF1-T
12N60G-TF3-T
12N60G-T2Q-T
TO-220
TO-220F1
TO-220F
TO-262
G
G
G
G
D
D
D
D
Tube
Tube
Tube
Tube
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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12N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
600
±30
V
Avalanche Current (Note 2)
12
A
Continuous
ID
12
A
Drain Current
Pulsed (Note 2)
IDM
48
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
790
mJ
mJ
V/ns
W
Avalanche Energy
EAR
24
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-220 / TO-262
Power Dissipation
225
PD
TO-220F / TO-220F1
51
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°C
°C
°C
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
UNIT
°C/W
°C/W
°C/W
Junction to Ambient
θJA
TO-220 / TO-262
0.56
Junction to Case
θJC
TO-220F/TO-220F1
2.43
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
BVDSS
IDSS
VGS = 0 V, ID = 250 µA
VDS = 600 V, VGS = 0 V
600
V
1
µA
IGSS
△BVDSS/△T
VGS = ±30 V, VDS = 0 V
±100 nA
0.7 V/°C
J ID=250µA, Referenced to 25°C
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
0.6 0.8
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID = 6.0A
Ω
CISS
COSS
CRSS
RG
1480 1900 pF
200 270 pF
VDS = 25 V, VGS = 0 V,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
25
35
pF
VDS =0V, VGS =0V, f =1MHz
0.2
1.2
Ω
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12N60
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD(ON)
tR
tD(OFF)
tF
30
70
ns
115 240 ns
95 200 ns
85 180 ns
VDD = 300V, ID = 12A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
42
8.6
21
54
nC
nC
nC
V
DS= 480V,ID= 12A,
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
VGS= 10 V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 12A
1.4
12
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
48
A
Reverse Recovery Time
trr
VGS = 0 V, IS = 12A,
dIF/dt = 100 A/µs (Note 1)
380
3.5
ns
Reverse Recovery Charge
QRR
µC
Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
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12N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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12N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VGS
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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12N60
Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-Resign Characteristics
Top:
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
101
101
150°C
25°C
Bottom: 5.5V
-55°C
100
100
Notes:
Notes:
1.VDS=50V
250µs Pulse Test
TC=25°C
2.250µs Pulse Test
10-1
10-1
100
101
2
4
6
8
10
Drain-Source Voltage, VGS (V)
Gate-Source Voltage, VGS (V)
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12N60
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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