12N60 [UTC]
12 Amps, 600/650 Volts N-CHANNEL MOSFET; 12安培， 600/650伏特N沟道MOSFET
| 型号： | 12N60 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 12 Amps, 600/650 Volts N-CHANNEL MOSFET |
| 文件： | 总6页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
12N60
Power MOSFET
12 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 12N60 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
FEATURES
*Pb-free plating product number:12N60L
* RDS(ON) = 0.7Ω @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
2
D
D
3
S
S
12N60-x-TA3-T
12N60-x-TF3-T
12N60L-x-TA3-T
12N60L-x-TF3-T
TO-220
G
G
Tube
Tube
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-170.A
12N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
12N60-A
12N60-B
600
650
Drain-Source Voltage
Gate-Source Voltage
VDSS
V
VGSS
IAR
±30
V
Avalanche Current (Note 1)
Continuous Drain Current
Pulsed Drain Current (Note 1)
12
A
ID
12
A
IDM
48
A
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
EAR
dv/dt
TJ
790
mJ
mJ
V/ns
℃
℃
℃
Avalanche Energy
24
Peak Diode Recovery dv/dt (Note 3)
Junction Temperature
4.5
+150
-55 ~ +150
-55 ~ +150
Operating Temperature
Storage Temperature
TOPR
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
12N60-A
12N60-B
600
650
V
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
IDSS
IGSS
VDS = 600 V, VGS = 0 V
VGS = ±30 V, VDS = 0 V
10
µA
±100 nA
△BVDSS/△T
J ID = 250 µA, Referenced to 25°C
0.7
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 6.0A
2.0
4.0
0.55 0.7
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Ω
CISS
COSS
CRSS
1480 1900 pF
200 270 pF
VDS = 25 V, VGS = 0 V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
25
35
pF
tD(ON)
tR
tD(OFF)
tF
30
70
ns
Turn-On Rise Time
VDD = 300V, ID = 12A, RG = 25Ω
(Note 4, 5)
115 240 ns
95 200 ns
85 180 ns
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
QG
42
8.6
21
54
nC
nC
nC
V
DS= 480V,ID= 12A, VGS= 10 V
Gate-Source Charge
QGS
QGD
(Note 4, 5)
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 12A
1.4
12
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
48
A
Reverse Recovery Time
tRR
VGS = 0 V, IS = 12A,
dIF/dt = 100 A/µs (Note 4)
380
3.5
ns
Reverse Recovery Charge
QRR
µC
Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature.
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12N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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12N60
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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12N60
Power MOSFET
TYPICAL CHARACTERISTICS
Transfer Characteristics
On-Resign Characteristics
Top:
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
101
101
150℃
25℃
Bottom: 5.5V
100
55℃
100
Notes:
1.VDS=50V
2.250μs Pulse Test
Notes:
250μs Pulse Test
TC=25℃
10-1
10-1
100
101
2
4
6
8
10
Drain-Source Voltage, VGS (V)
Gate-Source Voltage, VGS (V)
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12N60
Power MOSFET
TYPICAL CHARACTERISTICS
Transient Thermal Response Curve
D=0.5
0.2
100
Notes:
1.Zθjc(t)=2.27℃/W Max.
2.Duty Factor,D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.1
0.05
0.02
10-1
0.01
PDM
t
Single Pulse
10-2
T
101
10-5
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration, t1 (sec)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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