12P10L-TN3-T [UTC]
100V P-CHANNEL MOSFET; 100V P沟道MOSFET
| 型号： | 12P10L-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 100V P-CHANNEL MOSFET |
| 文件： | 总7页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
12P10
Preliminary
Power MOSFET
100V P-CHANNEL MOSFET
DESCRIPTION
The 12P10 uses advanced proprietary, planar stripe, DMOS
technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable to be
used in low voltage applications such as audio amplifier, high
efficiency switching DC/DC converters, and DC motor control.
FEATURES
* RDS(ON) = 0.29Ω @VGS = -10 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
Lead-free:
12P10L
Halogen-free: 12P10G
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
12P10G-TN3-R
12P10G-TN3-T
1
2
D
D
3
S
S
12P10-TN3-R
12P10-TN3-T
12P10L-TN3-R
12P10L-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-262.a
12P10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
-100
±30
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
-9.4
A
IDM
-37.6
-9.4
A
IAR
A
EAS
370
mJ
mJ
V/ns
W
EAR
5.0
dv/dt
-6.0
Ta= 25°C
50
PD
Derate above 25°C
0.4
W/°C
℃
Junction Temperature
TJ
+150
-55 ~ +150
℃
Storage Temperature
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L=6.3mH, IAS=-9.4A, VDD=-25V, RG=25Ω, Starting TJ=25°C
4. ISD≤-11.5A, di/dt≤300μA/ s, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
MAX
110
2.5
UNIT
℃/W
℃/W
Junction-to-Ambient
Junction-to-Case
θJC
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS=0 V, ID=-250µA
ID=-250µA,
Referenced to 25°C
VDS=-100V, VGS=0V
VDS=0V, VGS=±30V
-100
V
ΔBVDSS/ΔTJ
-0.1
V/°C
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
IDSS
IGSS
-1
µA
±100 nA
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=-250µA
-2.0
-4.0
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
VGS=-10V, ID=-4.7A
0.24 0.29
6.3
VDS =-40V, ID=-4.7A (Note 1)
CISS
COSS
CRSS
620
220
65
800
290
85
pF
pF
pF
VDS=-25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
nC
nC
nC
ns
ns
ns
ns
21
4.6
11.5
15
27
V
V
DS=-80V, ID=-11.5A,
GS=-10V(Note 1, 2)
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
40
330
80
VDD=-50V, ID=-11.5A,
RG=25Ω(Note 1, 2)
160
35
tD(OFF)
tF
60
130
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12P10
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER SYMBOL
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNIT
Diode Forward Voltage
VSD
IS
VGS=0V, IS=-9.4A
-4.0
-9.4
V
A
Maximum Body-Diode Continuous Current
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
-37.6
A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
V
GS=0V, IS=-11.5A,
110
ns
dIF/dt=100A/s(Note 4)
QRR
0.47
nC
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Note: 2. Essentially independent of operating temperature
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12P10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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12P10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-262.a
12P10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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12P10
Preliminary
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Source to Drain Voltage
1200
1000
Switching Time Waveforms
800
600
VDS
90%
10%
VGS
400
td(off)
200
0
tr
tf
200
400
600
0
800
td(on)
Source to Drain Voltage,VSD (mV)
Drain-Source On-State Resistance Characteristics
12
10V
10
4.5V
8
VGS=2.5V
6
4
2
0
0
200
50
100
150
Drain to Source Voltage, VDS (mV)
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