13002AGL-T92-A-B [UTC]
HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS;
| 型号： | 13002AGL-T92-A-B |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS 高压 开关 |
| 文件： | 总3页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
13002AG
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE FAST
SWITCHING NPN POWER
APPLICATIONS
DESCRIPTION
The device is manufactured using High Voltage Multi Epitaxial
Planar technology for high switching speeds and high voltage
1
TO-92
capability.
The UTC 13002AG is designed for use in Compact Fluorescent
Lamps.
FEATURES
* High Voltage Capability
* Low Spread of Dynamic Parameters
* Very High Switching Speed
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
C
C
3
13002AGL-T92-A-B
13002AGL-T92-A-K
13002AGP-T92-A-B
13002AGP-T92-A-K
TO-92
TO-92
E
E
B
B
Tape Box
Bulk
13002AGL-T92-A-B
(1) B: Bluk, K: Bulk
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Free
(2) refer to Pin Assignment
(3) T92: TO-92
(4) L: Lead Free, P: Halogen Free
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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13002AG
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCES
VCEO
VEBO
IC
RATINGS
700
UNIT
V
Collector Emitter Voltage (VBE = 0)
Collector Emitter Voltage (IB = 0)
Emitter Base Voltage (IC = 0)
Collector Current
400
V
9
V
0.75
A
Collector Peak Current (tp < 5 ms)
Base Current
ICM
0.5
A
IB
0.4
A
Base Peak Current (tp < 5 ms)
Total Dissipation at Ta = 25°C
Junction Temperature
IBM
0.75
A
PD
0.95
W
°C
°C
TJ
+150
-40 ~ +150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERAMAL DATA
PARAMETER
SYMBOL
RATINGS
130
UNIT
Thermal Resistance Junction-ambient
θJA
°C /W
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
VCEO(SUS) IC = 1 mA
IC = 0.2 A , IB = 40 mA
MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage (IB = 0)
(Note)
700
V
0.2 0.5
0.3
Collector Emitter Saturation Voltage (Note)
VCE(SAT) IC = 0.3 A , IB = 75 mA
IC = 0.4 A , IB = 135 mA
1
V
0.4 1.5
IC = 0.2 A , IB = 40 mA
VBE(SAT)
1
1.2
1
Base Emitter Saturation Voltage (Note)
V
IC = 0.3 A , IB = 75 mA
Emitter Cut off Current (IC = 0)
IEBO
ICEV
VEB = 9 V
mA
Collector Cut off Current (VBE = -1.5V)
VCE = 700 V
250 μ A
IC = 0.2 A, VCE = 5 V
IC = 0.4 A, VCE = 5 V
IC = 0.2 A , VCLAMP = 300 V
12
7
27
20
DC Current Gain
hFE*
tF
Inductive Load Fall Time
0.3
μ s
I
B1 = -IB2 = 40 mA , L = 3 mH
Note: Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R201-090.c
www.unisonic.com.tw
13002AG
Preliminary
NPN SILICON TRANSISTOR
INDUCTIVE LOAD SWITCHING TEST CIRCUIT
LC
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
(3)
IB1
IC
(1)
VCE
IB
VCLAMP
Vcc
RBB(2)
-
VBB
+
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R201-090.c
www.unisonic.com.tw
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