13003DHG-B-T92-K [UTC]
NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION;
| 型号： | 13003DHG-B-T92-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION |
| 文件： | 总4页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
13003DH
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON BIPOLAR
TRANSISTORS FOR LOW
FREQUENCY AMPLIFICATION
DESCRIPTION
The UTC 13003DH is a silicon NPN power switching transistor; it
uses UTC’s advanced technology to provide customers high
collector-base breakdown voltage, low reverse leakage current and
high reliability, etc.
The UTC 13003DH is suitable for electronic ballast power switch
circuit and the compact electronic energy-saving light.
FEATURES
* High collector-base breakdown voltage
* Low reverse leakage current
* High reliability
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
Packing
Halogen Free
1
B
B
E
E
2
C
C
C
C
3
E
E
B
B
13003DHL-x-TM3-T
13003DHL-x-T60-K
13003DHL-x-T92-B
13003DHL-x-T92-K
13003DHG-x-TM3-T
13003DHG-x-T60-K
13003DHG-x-T92-B
13003DHG-x-T92-K
TO-251
TO-126
TO-92
TO-92
Tube
Bulk
Tape Box
Bulk
Note: Pin Assignment: B: Base C: Collector E: Emitter
13003DHL-x-TM3-T
(1) T: Tube, B: Bluk, K: Bulk
(1)Packing Type
(2) TM3: TO-251, T60: TO-126, T92: TO-92
(3) x: refer to Classification of hFE
(2)Package Type
(3)Rank
(4) L: Lead Free, G: Halogen Free
(4)Lead Free
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13003DH
Preliminary
NPN SILICON TRANSISTOR
MARKING INFORMATION
PACKAGE
MARKING
TO-251
TO-126
TO-92
UNISONIC TECHNOLOGIES CO., LTD
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13003DH
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
600
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
400
V
9
V
Continuous Collector Current
1.8
A
TA=25°C
TC=25°C
1.25
50
W
W
°C
°C
Power Dissipation
PD
Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=0.1mA
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
600
400
9
V
V
IC=1mA
IE=0.1mA
V
VCB=600V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
0.1 mA
0.1 mA
0.1 mA
30
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note 1)
ICEO
IEBO
hFE
IC=0.2A, VCE=5.0V
hFE1: VCE=5V, IC=5mA
hFE2: VCE=5V, IC=0.2A
15
Low current and high current hFE2 hFE1 ratio
hFE1/ hFE2
0.75 0.9
Collector-Emitter Saturation Voltage (Note)
Base-Emitter Saturation Voltage (Note)
Storage Time
VCE(SAT) IC=1A, IB=0.25A
0.30 0.8
0.9 1.2
V
V
VBE(SAT)
IC=1A, IB=0.25A
tS
tR
tF
3
5
5
1
1
μs
μs
μs
MHz
V
UI9600，IC=0.1A
Rise Time
Fall Time
Transition Frequency
Diode Forward Voltage
fT
IC=0.1A, VCE=10V, f=1MHz
IF=1.5A
VF
2.5
Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
15 ~ 20
20 ~ 25
25 ~ 30
UNISONIC TECHNOLOGIES CO., LTD
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13003DH
Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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