13N50_10 [UTC]
500V N-CHANNEL MOSFET; 500V N沟道MOSFET
| 型号： | 13N50_10 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 500V N-CHANNEL MOSFET |
| 文件： | 总6页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
13N50
Preliminary
Power MOSFET
500V N-CHANNEL MOSFET
DESCRIPTION
1
TO-220
The UTC 13N50 is an N-Channel enhancement mode power MOSFET.
The device adopts planar stripe and uses DMOS technology to minimize
and provide lower on-state resistance and faster switching speed. It can
also withstand high energy pulse under the avalanche and commutation
mode conditions.
The UTC 13N50 is ideally suitable for high efficiency switch mode
power supply, power factor correction, electronic lamp ballast based on half
bridge topology.
1
TO-220F
FEATURES
* RDS(ON) =0.48Ω @VGS = 10 V
* Ultra low gate charge (typical 43 nC )
* Low reverse transfer Capacitance ( CRSS = typical 20pF )
* Fast switching capability
1
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
TO-220F1
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
13N50L-TA3-T
13N50L-TF3-T
13N50L- TF1-T
13N50G-TA3-T
13N50G-TF3-T
13N50G-TF1-T
TO-220
TO-220F
TO-220F1
G
G
G
Tube
Tube
Tube
www.unisonic.com.tw
1 of 6
Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-362.c
13N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous Drain Current
13
A
Pulsed Drain Current (Note 2)
Avalanche Current (Note 2)
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IDM
52
A
IAR
13
A
EAS
810
mJ
mJ
V/ns
W
EAR
17
dv/dt
4.5
TO-220
TO-220F
168
Power Dissipation (TC=25°C)
PD
48
W
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 9.3mA, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C
4. ISD≤13.A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
TO-220
TO-220F
TO-220
TO-220F
Junction to Ambient
Junction to Case
θJA
62.5
0.74
θJC
2.58
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 500V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ID = 250μA
500
V
1
μA
nA
100
Gate-Source Leakage Current
IGSS
-100 nA
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
0.5
V/°C
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6.5A
2.0
4.0
V
Ω
S
0.33 0.43
10
VDS=50V, ID=6.25A (Note 1)
CISS
COSS
CRSS
1800 2300 pF
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
245 320
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
25
35
tD(ON)
tR
tD(OFF)
tF
40
90
nS
nS
nS
nS
nC
nC
nC
Turn-On Rise Time
VDD =250V, ID =13A
RG =25Ω (Note 1,2)
140 290
100 210
Turn-Off Delay Time
Turn-Off Fall Time
85
45
11
22
180
60
Total Gate Charge
QG
VDS=400V, ID=13A, VGS=10 V
Gate-Source Charge
QGS
QGD
(Note 1, 2)
Gate-Drain Charge
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-362.c
13N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
IS
VGS = 0V, IS = 13 A
1.4
13
V
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
52
A
Reverse Recovery Time
tRR
VGS = 0V, IS = 13A,
dIF / dt = 100A/μs (Note 1)
290
2.6
nS
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating ambient temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-362.c
13N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
ISD
L
Driver
RG
Same Type
as D.U.T.
VDD
VGS
* dv/dt controlled by RG
* ISD controlled by pulse period
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Gate Pulse Width
Gate Pulse Period
VGS
(Driver)
D=
10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
VDS
(D.U.T.)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-362.c
13N50
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig.2B Switching Waveforms
VGS
Same Type
as D.U.T.
QG
10V
50kꢀ
12V
0.3µF
0.2µF
QGS
QGD
VDS
VGS
DUT
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-362.c
13N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R502-362.c
相关型号：
©2020 ICPDF网 联系我们和版权申明