15N20G-TN3-R [UTC]
15A, 200V N-CHANNEL POWER MOSFET; 15A ， 200V N沟道功率MOSFET
| 型号： | 15N20G-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 15A, 200V N-CHANNEL POWER MOSFET |
| 文件： | 总3页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
15N20
Preliminary
Power MOSFET
15A, 200V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 15N20 is an N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with perfect
DS(ON), high switching speed, high current capacity and low gate
charge.
The UTC 15N20 is universally applied in low voltage such as
R
automotive, high efficiency switching for DC/DC converters and DC
motor control, etc.
FEATURES
* RDS(ON)=0.12Ω @ VGS=10V,ID=7.5A
* Low Gate Charge (Typical 20nC)
* Low CRSS (Typical 25pF)
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
S
S
15N20L-TN3-R
15N20L-TN3-T
15N20G-TN3-R
15N20G-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-717.a
15N20
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
200
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous
Pulsed
15
A
Continuous Drain Current
IDM
60
A
Single Pulsed Avalanche Current
Single Pulsed Avalanche Energy
Power Dissipation
IAS
15
A
EAS
PD
340
mJ
W
°C
°C
83
Junction Temperature
TJ
+150
-55 ~ +150
Storage Temperature
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
110
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
1.5
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=200V, VGS=0V
GS=+30V, VDS=0V
200
V
1
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate-Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=7.5A
3
5
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
0.12 0.14
ꢀ
CISS
COSS
CRSS
830 1080 pF
200 260 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
25
33
pF
QG
QGS
QGD
tD(ON)
tR
20
5.6
10
16
26 nC
nC
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
VGS=10V, VDD=120V, ID=18A
nC
40
ns
133 275 ns
38 85 ns
62 135 ns
VDD=30V, ID=1A, RG=25ꢀ,
GS=10V, RL=30 ꢀ
V
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
15
60
A
A
V
ISM
VSD
IS=15A, VGS=0V
1.5
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-717.a
www.unisonic.com.tw
15N20
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-717.a
www.unisonic.com.tw
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