18N50L-TF3-T [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 18N50L-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
18N50
Power MOSFET
18A, 500V N-CHANNEL
POWER MOSFET
1
1
TO-220
TO-230
DESCRIPTION
The UTC 18N50 is an N-channel enhancement mode power
MOSFET using UTC’s advanced planar stripe and DMOS
technology to provide perfect performance.
This technology can withstand high energy pulse in the
avalanche and commutation mode. It can provide minimum
on-state resistance and high switching speed.
1
1
1
TO-220F1
TO-220F
This device is generally applied in active power factor
correction and high efficient switched mode power supplies.
1
FEATURES
TO-3P
TO-220F2
1
* RDS(ON) < 0.32Ω @ VGS=10V, ID=9A
* High switching speed
* 100% avalanche tested
* Improved dv/dt capability
TO-263
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
18N50L-TA3-T
Halogen Free
1
2
3
18N50G-TA3-T
18N50G-TF3-T
18N50G-TF1-T
18N50G-TF2-T
18N50G-TC3-T
18N50G-T3P-T
18N50G-TQ2-T
18N50G-TQ2-R
TO-220
TO-220F
TO-220F1
TO-220F2
TO-230
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
S
Tube
Tube
S
S
S
S
S
S
S
18N50L-TF3-T
18N50L-TF1-T
Tube
18N50L-TF2-T
Tube
18N50L-TC3-T
Tube
18N50L-T3P-T
TO-3P
Tube
18N50L-TQ2-T
TO-263
Tube
18N50L-TQ2-R
TO-263
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R502-477.L
18N50
Power MOSFET
MARKING
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18N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain to Source Voltage
Gate to Source Voltage
±30
18
V
Continuous
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
72 (Note 5)
945
A
EAS
mJ
mJ
A
Avalanche Energy
EAR
23.5
Avalanche Current (Note 2)
IAR
18
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F/TO-220F1
38.5
TO-220F2
TO-220/TO-263
TO-230
40.5
Power Dissipation
PD
W
235
TO-3P
277
+150
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=5.2mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤18A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
Junction to Ambient
θJA
TO-220F/TO-220F1
TO-220F2
3.3
3.0
Junction to Case
θJc
°C/W
TO-220/TO-263
TO-230
0.53
0.45
TO-3P
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18N50
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
500
V
V/°C
µA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
0.5
V
DS=500V, VGS=0V
VDS=400V, TC=125°C
GS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
1
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
IGSS
10
µA
Forward
Reverse
V
100
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
RDS(ON) VGS=10V, ID=9A
2.0
4.0
V
Ω
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
0.32
gFS
VDS=40V, ID=9A (Note 1)
25
CISS
COSS
CRSS
1200 2860 pF
Output Capacitance
VDS=25V,VGS=0V,f=1.0MHz
270 430
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
35
40
QG
QGS
QGD
tD(ON)
tR
70
15
19
85
nC
nC
nC
ns
ns
ns
ns
V
DS=50V, VGS=10V, ID=1.3A
Gate-Source Charge
(Note 1,2)
Gate-Drain Charge
Turn-ON Delay Time
110 130
165 340
520 620
180 290
Turn-ON Rise Time
VDD=30V, ID=0.5A,
RG=25Ω (Note 1,2)
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
18
72
A
A
V
ISM
VSD
IS =18A, VGS=0V
1.4
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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18N50
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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18N50
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
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18N50
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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